公开(公告)号：US20140177342A1

公开(公告)日：2014-06-26

申请号：US14132124

申请日：2013-12-18

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Violante Moschiano ,  Domenico Di Cicco ,  Andrea D'Alessandro

IPC: G11C16/26

CPC classification number: G11C16/26 ,  G11C11/5642 ,  G11C16/0483 ,  G11C16/3436

Abstract: The present disclosure includes devices, methods, and systems including memory cell sensing using a boost voltage. One or more embodiments include pre-charging and/or floating a data line associated with a selected memory cell, boosting the pre-charged and/or floating data line, and determining a state of the selected memory cell based on a sensed discharge of the data line after boosting the data line.

Abstract translation: 本公开包括包括使用升压电压的存储器单元感测的装置，方法和系统。 一个或多个实施例包括预先充电和/或浮动与所选择的存储器单元相关联的数据线，升压预充电和/或浮置数据线，以及基于感测到的放电，确定所选择的存储器单元的状态 提升数据线后的数据线。

公开(公告)号：US09036426B2

公开(公告)日：2015-05-19

申请号：US14132124

申请日：2013-12-18

Applicant: Micron Technology, Inc.

Inventor： Violante Moschiano ,  Domenico Di Cicco ,  Andrea D'Alessandro

IPC: G11C16/06 ,  G11C16/26 ,  G11C11/56 ,  G11C16/34 ,  G11C16/04

CPC classification number: G11C16/26 ,  G11C11/5642 ,  G11C16/0483 ,  G11C16/3436

Abstract: The present disclosure includes devices, methods, and systems including memory cell sensing using a boost voltage. One or more embodiments include pre-charging and/or floating a data line associated with a selected memory cell, boosting the pre-charged and/or floating data line, and determining a state of the selected memory cell based on a sensed discharge of the data line after boosting the data line.

Abstract translation: 本公开包括包括使用升压电压的存储器单元感测的装置，方法和系统。 一个或多个实施例包括预先充电和/或浮动与所选择的存储器单元相关联的数据线，升压预充电和/或浮置数据线，以及基于感测到的放电，确定所选择的存储器单元的状态 提升数据线后的数据线。