公开(公告)号：US20240203482A1

公开(公告)日：2024-06-20

申请号：US18494463

申请日：2023-10-25

Applicant: Micron Technology, Inc.

Inventor： Huy T. Vo ,  Charles L. Ingalls ,  Shizhong Mei ,  Luoqi Li

IPC: G11C11/4091 ,  G11C11/4074

CPC classification number: G11C11/4091 ,  G11C11/4074

Abstract: A memory device may include multiple memory cells configured to store data. The memory device may also include multiple digit lines that carry data to and from a respective memory cell. The memory device may include multiple sense amplifiers each selectively coupled to respective digit lines and including first and second transistors and first and second gut nodes coupled to the first and second transistors, respectively. Each sense amplifier may amplify a differential voltage between the first and second gut nodes by charging the first gut node and discharging the second gut node based on respective charges the digit lines, where a gain of the amplification is based on a negative voltage supplied to the sense amplifier and/or negative digit line write back operations.

公开(公告)号：US20240144983A1

公开(公告)日：2024-05-02

申请号：US17975300

申请日：2022-10-27

Applicant: Micron Technology, Inc.

Inventor： Luoqi Li ,  Huy Thanh Vo ,  Christopher John Kawamura

IPC: G11C7/10 ,  G11C7/06 ,  G11C7/12

CPC classification number: G11C7/1063 ,  G11C7/06 ,  G11C7/1069 ,  G11C7/12

Abstract: An apparatus may include a sense amplifier with a single column select transistor, a local input/output line selectively couplable to a first bit line through the column select transistor, and a read/write gap comprising at least a first transistor and a second transistor. The first transistor may be couplable to a read select signal and a complimentary local input/output line and the second transistor is couplable to the complimentary local input/output line and a global input/output line.

公开(公告)号：US12125796B2

公开(公告)日：2024-10-22

申请号：US18507908

申请日：2023-11-13

Applicant: Micron Technology, Inc.

Inventor： Fatma Arzum Simsek-Ege ,  Luoqi Li ,  Marsela Pontoh

IPC: H01L23/31 ,  H01L23/538 ,  H01L25/065

CPC classification number: H01L23/5385 ,  H01L23/31 ,  H01L23/5384 ,  H01L23/5386 ,  H01L25/0657

Abstract: Semiconductor die assemblies with decomposable materials, and associated methods and systems are disclosed. In an embodiment, a semiconductor die assembly includes a memory controller die carrying one or more memory dies attached to its first side. The semiconductor die assembly also includes a biodegradable structure attached to its second side opposite to the first side. The biodegradable structure includes a conductive material and an insulating material, both of which are biodegradable and disintegrate in a wet process. The biodegradable structure can be configured to couple the memory controller die with an interface die. In this manner, when the biodegradable structure disintegrates (e.g., dissolve) in the wet process, the memory controller carrying the memory dies can be separated from the interface die to reclaim the memory controller with the memory dies and the interface die.

公开(公告)号：US20240079338A1

公开(公告)日：2024-03-07

申请号：US18507908

申请日：2023-11-13

Applicant: Micron Technology, Inc.

Inventor： Fatma Arzum Simsek-Ege ,  Luoqi Li ,  Marsela Pontoh

IPC: H01L23/538 ,  H01L23/31 ,  H01L25/065

CPC classification number: H01L23/5385 ,  H01L23/31 ,  H01L23/5384 ,  H01L23/5386 ,  H01L25/0657

Abstract: Semiconductor die assemblies with decomposable materials, and associated methods and systems are disclosed. In an embodiment, a semiconductor die assembly includes a memory controller die carrying one or more memory dies attached to its first side. The semiconductor die assembly also includes a biodegradable structure attached to its second side opposite to the first side. The biodegradable structure includes a conductive material and an insulating material, both of which are biodegradable and disintegrate in a wet process. The biodegradable structure can be configured to couple the memory controller die with an interface die. In this manner, when the biodegradable structure disintegrates (e.g., dissolve) in the wet process, the memory controller carrying the memory dies can be separated from the interface die to reclaim the memory controller with the memory dies and the interface die.

公开(公告)号：US20250046723A1

公开(公告)日：2025-02-06

申请号：US18922192

申请日：2024-10-21

Applicant: Micron Technology, Inc.

Inventor： Fatma Arzum Simsek-Ege ,  Luoqi Li ,  Marsela Pontoh

IPC: H01L23/538 ,  H01L23/31 ,  H01L25/065

Abstract: Semiconductor die assemblies with decomposable materials, and associated methods and systems are disclosed. In an embodiment, a semiconductor die assembly includes a memory controller die carrying one or more memory dies attached to its first side. The semiconductor die assembly also includes a biodegradable structure attached to its second side opposite to the first side. The biodegradable structure includes a conductive material and an insulating material, both of which are biodegradable and disintegrate in a wet process. The biodegradable structure can be configured to couple the memory controller die with an interface die. In this manner, when the biodegradable structure disintegrates (e.g., dissolve) in the wet process, the memory controller carrying the memory dies can be separated from the interface die to reclaim the memory controller with the memory dies and the interface die.

公开(公告)号：US11727980B2

公开(公告)日：2023-08-15

申请号：US17217981

申请日：2021-03-30

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Yuan He ,  Luoqi Li

IPC: G11C11/4094 ,  G11C11/4091 ,  G11C11/4074 ,  G11C11/4093

CPC classification number: G11C11/4091 ,  G11C11/4074 ,  G11C11/4093 ,  G11C11/4094

Abstract: Apparatuses, systems, and methods for single-ended global and local input/output architecture. A conventional memory may use local input/output (LIO) and global input/output (GIO) lines which are paired and carry complimentary signals. The present disclosure includes single ended LIO and GIO architecture where a single LIO couples a single GIO between a read/write amplifier and bit line as part of an access operation. This may reduce a footprint of the memory device.

公开(公告)号：US12106820B2

公开(公告)日：2024-10-01

申请号：US17975300

申请日：2022-10-27

Applicant: Micron Technology, Inc.

Inventor： Luoqi Li ,  Huy Thanh Vo ,  Christopher John Kawamura

IPC: G11C7/22 ,  G11C7/06 ,  G11C7/10 ,  G11C7/12

CPC classification number: G11C7/1063 ,  G11C7/06 ,  G11C7/1069 ,  G11C7/12

Abstract: An apparatus may include a sense amplifier with a single column select transistor, a local input/output line selectively couplable to a first bit line through the column select transistor, and a read/write gap comprising at least a first transistor and a second transistor. The first transistor may be couplable to a read select signal and a complimentary local input/output line and the second transistor is couplable to the complimentary local input/output line and a global input/output line.

公开(公告)号：US11817393B2

公开(公告)日：2023-11-14

申请号：US17463994

申请日：2021-09-01

Applicant: Micron Technology, Inc.

Inventor： Fatma Arzum Simsek-Ege ,  Luoqi Li ,  Marsela Pontoh

IPC: H01L23/31 ,  H01L23/538 ,  H01L25/065

CPC classification number: H01L23/5385 ,  H01L23/31 ,  H01L23/5384 ,  H01L23/5386 ,  H01L25/0657

Abstract: Semiconductor die assemblies with decomposable materials, and associated methods and systems are disclosed. In an embodiment, a semiconductor die assembly includes a memory controller die carrying one or more memory dies attached to its first side. The semiconductor die assembly also includes a biodegradable structure attached to its second side opposite to the first side. The biodegradable structure includes a conductive material and an insulating material, both of which are biodegradable and disintegrate in a wet process. The biodegradable structure can be configured to couple the memory controller die with an interface die. In this manner, when the biodegradable structure disintegrates (e.g., dissolve) in the wet process, the memory controller carrying the memory dies can be separated from the interface die to reclaim the memory controller with the memory dies and the interface die.

公开(公告)号：US20230069261A1

公开(公告)日：2023-03-02

申请号：US17463994

申请日：2021-09-01

Applicant: Micron Technology, Inc.

Inventor： Fatma Arzum Simsek-Ege ,  Luoqi Li ,  Marsela Pontoh

IPC: H01L23/538 ,  H01L25/065 ,  H01L23/31

Abstract: Semiconductor die assemblies with decomposable materials, and associated methods and systems are disclosed. In an embodiment, a semiconductor die assembly includes a memory controller die carrying one or more memory dies attached to its first side. The semiconductor die assembly also includes a biodegradable structure attached to its second side opposite to the first side. The biodegradable structure includes a conductive material and an insulating material, both of which are biodegradable and disintegrate in a wet process. The biodegradable structure can be configured to couple the memory controller die with an interface die. In this manner, when the biodegradable structure disintegrates (e.g., dissolve) in the wet process, the memory controller carrying the memory dies can be separated from the interface die to reclaim the memory controller with the memory dies and the interface die.

公开(公告)号：US20220319576A1

公开(公告)日：2022-10-06

申请号：US17217981

申请日：2021-03-30

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Yuan He ,  Luoqi Li

IPC: G11C11/4091 ,  G11C11/4094 ,  G11C11/4093 ,  G11C11/4074

Abstract: Apparatuses, systems, and methods for single-ended global and local input/output architecture. A conventional memory may use local input/output (LIO) and global input/output (GIO) lines which are paired and carry complimentary signals. The present disclosure includes single ended LIO and GIO architecture where a single LIO couples a single GIO between a read/write amplifier and bit line as part of an access operation. This may reduce a footprint of the memory device.