公开(公告)号：US3912545A

公开(公告)日：1975-10-14

申请号：US46948774

申请日：1974-05-13

Applicant: MOTOROLA INC

Inventor： ARMSTRONG WILLIAM E

IPC: H01L21/00 ,  H01L21/265 ,  H01L21/8236 ,  H01L29/00

CPC classification number: H01L21/265 ,  H01L21/00 ,  H01L21/26513 ,  H01L21/8236 ,  H01L29/00

Abstract: A process is described wherein an N-channel silicon gate device operates from a single voltage supply. This process includes an ion implantation step into the gate region of both the load and switch devices for adjusting upwards the threshold voltage of such N-channel silicon gate load and switch devices. This ion implantation of the gate region utilizes the dosage and ion implant energy as factors in determining the change in the threshold voltage. The ion implantation is in a region essentially at the surface of the gate region and as such appears to be a change in the Qss term of the device. The effect of the ion implantation is to increase upwards the threshold voltage of the structure as compared with the expected threshold voltage based on the resistivity level of the starting material of the wafer. The overall effect of this process is to provide an active device having a higher output voltage than can be expected from using the starting resistivity material. The output voltage is approximately 25% greater using this process because the body effect turns out to be much lower in the present process than in the prior art process.

Abstract translation: 描述了其中N沟道硅栅极器件从单个电压源操作的过程。 该过程包括进入负载和开关器件的栅极区域的离子注入步骤，用于向上调整这种N沟道硅栅极负载和开关器件的阈值电压。 栅极区域的这种离子注入利用剂量和离子注入能量作为确定阈值电压变化的因素。 离子注入在基本上位于栅极区域的表面的区域中，并且因此似乎是器件的Q ss项的变化。 与基于晶片的起始材料的电阻率水平的预期阈值电压相比，离子注入的效果是向上增加结构的阈值电压。 该方法的总体效果是提供具有比使用起始电阻率材料预期的更高的输出电压的有源器件。 使用该过程，输出电压大约为25％，因为在现有技术中，身体效应比现有技术的方法低得多。

公开(公告)号：US3887733A

公开(公告)日：1975-06-03

申请号：US46363174

申请日：1974-04-24

Applicant: MOTOROLA INC

Inventor： TOLLIVER DONALD L ,  ARMSTRONG WILLIAM E

IPC: H01L21/3105 ,  H01L23/522 ,  B44D1/16

CPC classification number: H01L21/3105 ,  H01L23/522 ,  H01L2924/0002 ,  Y10S148/003 ,  Y10S148/06 ,  Y10S148/133 ,  H01L2924/00

Abstract: The shape of a doped oxide (e.g.) phosphorous doped oxide layer on a substrate may be altered by contacting the doped oxide with a source of hydroxyl ions, such as water, and heating the doped oxide to at least its softening temperature while in contact with the source of hydroxyl ions. The presence of the hydroxyl ions during this anneal reduces time required for the anneal by a factor of three or four for a given alteration of shape. This process is particularly useful for assuring proper oxide coverage over stepped structures, and correction of surface irregularities common in integrated circuits.

Abstract translation: 掺杂的氧化物（例如）磷掺杂氧化物层的形状可以通过使掺杂的氧化物与羟基离子源例如水接触而改变，并且将掺杂的氧化物加热至至少其软化温度，同时与 羟基离子的来源。 在该退火期间，羟基离子的存在将给定的形状变化减少了3或4倍的退火所需的时间。 该过程对于确保阶梯式结构的适当氧化物覆盖以及校正集成电路中常见的表面凹凸特别有用。