公开(公告)号：US3698948A

公开(公告)日：1972-10-17

申请号：US3698948D

申请日：1968-07-26

Applicant: MOTOROLA INC

Inventor： BARONE FRANK J ,  TOLLIVER DONALD L

IPC: H01L21/28 ,  H01L21/316 ,  H01L29/00 ,  H01L29/06 ,  H01L7/00 ,  C23C11/08

CPC classification number: H01L29/0638 ,  H01L21/02129 ,  H01L21/02164 ,  H01L21/022 ,  H01L21/02211 ,  H01L21/02271 ,  H01L21/02307 ,  H01L21/28 ,  H01L21/31612 ,  H01L29/00 ,  Y10S438/91 ,  Y10S438/974

Abstract: IN THE FABRICATION OF A SEMICONDUCTOR DEVICE HAVING A SILICON-SILICON DIOXIDE INTERFACE, THE POLARITY OF THE SPACE CHARGE REGION ASSOCIATED WITH THE INTERFACE IS PREDETERMINED BY A METHOD WHICH BEGINS WITH THE STEP OF PRETREATING THE SILICON SURFACE WITH A SELECTED REAGENT CAPABLE OF INDUCING THE DESIRED SPACE CHARGE POLARITY. FOR EXAMPLE, A PRETREATMENT WITH CHROMIC ACID INDUCES A NEGATIVE SPACE CHARGE REGION, WHEREAS A PRETREATMENT WITH NITRIC ACID INDUCES A POSITIVE CHARGE. THE INTERFACE IS THEN FORMED BY VAPOR DEPOSITION OF A SLICON DIOXIDE LAYER ON THE SILICON SURFACE. THE PRETREATMENT HAS BEEN FOUND CAPABLE OF INDUCING A PREDETERMINED CHARGE WHEN THE INTERFACE IS PROVIDED BY VAPOR DEPOSITION, BUT IS WHOLLY INEFFECTIVE WHEN THE INTERFACE IS PROVIDED BY THERMAL OXIDATION. IT IS WELL KNOWN THAT THERMAL OXIDATION OF A SILICON SURFACE INHERENTLY PRODUCES AN INTERFACE HAVING A POSITIVE SPACE CHARGE REGION.

公开(公告)号：US3510728A

公开(公告)日：1970-05-05

申请号：US3510728D

申请日：1967-09-08

Applicant: MOTOROLA INC

Inventor： TOLLIVER DONALD L

IPC: C03C3/06 ,  C23C16/40 ,  H01L21/316 ,  H01L23/522 ,  H01L23/532 ,  H01L5/06 ,  H02B9/00

CPC classification number: H01L23/5329 ,  C03C3/06 ,  C03C2201/28 ,  C03C2203/40 ,  C23C16/401 ,  H01L21/02129 ,  H01L21/02271 ,  H01L21/31625 ,  H01L23/522 ,  H01L2924/0002 ,  H01L2924/00

公开(公告)号：US3887733A

公开(公告)日：1975-06-03

申请号：US46363174

申请日：1974-04-24

Applicant: MOTOROLA INC

Inventor： TOLLIVER DONALD L ,  ARMSTRONG WILLIAM E

IPC: H01L21/3105 ,  H01L23/522 ,  B44D1/16

CPC classification number: H01L21/3105 ,  H01L23/522 ,  H01L2924/0002 ,  Y10S148/003 ,  Y10S148/06 ,  Y10S148/133 ,  H01L2924/00

Abstract: The shape of a doped oxide (e.g.) phosphorous doped oxide layer on a substrate may be altered by contacting the doped oxide with a source of hydroxyl ions, such as water, and heating the doped oxide to at least its softening temperature while in contact with the source of hydroxyl ions. The presence of the hydroxyl ions during this anneal reduces time required for the anneal by a factor of three or four for a given alteration of shape. This process is particularly useful for assuring proper oxide coverage over stepped structures, and correction of surface irregularities common in integrated circuits.

Abstract translation: 掺杂的氧化物（例如）磷掺杂氧化物层的形状可以通过使掺杂的氧化物与羟基离子源例如水接触而改变，并且将掺杂的氧化物加热至至少其软化温度，同时与 羟基离子的来源。 在该退火期间，羟基离子的存在将给定的形状变化减少了3或4倍的退火所需的时间。 该过程对于确保阶梯式结构的适当氧化物覆盖以及校正集成电路中常见的表面凹凸特别有用。

公开(公告)号：US3476619A

公开(公告)日：1969-11-04

申请号：US3476619D

申请日：1966-09-13

Applicant: MOTOROLA INC

Inventor： TOLLIVER DONALD L

IPC: H01L21/225 ,  H01L21/3115 ,  H01L21/316 ,  H01L7/44

CPC classification number: H01L21/02271 ,  H01L21/02129 ,  H01L21/2255 ,  H01L21/3115 ,  H01L21/31625 ,  Y10S148/043 ,  Y10S148/118 ,  Y10S438/958