Abstract:
A method of repairing a spent printhead or printhead subassembly and a repaired printhead or printhead subassembly made in accordance with such method is disclosed. The method includes the steps of removing the print pins from the spent printhead or printhead subassembly, removing at least a portion of the nose section in the area of the print pin holes of the spent printhead or printhead subassembly, filling at least a portion of such removed portion of the nose section with a casting material, inserting guide wires into the print pin holes in the nose section and permitting the casting material to at least partially cure to form new print pin holes. Also disclosed is a printhead or printhead subassembly repaired from a spent printhead having original print pin holes, the repaired printhead having a first section which includes a plurality of original print pin holes and a second section which includes a plurality of repaired print pin holes, the original print pin holes and repaired print pin holes being in alignment so as to form a plurality of composite print pin holes in the nose section, and a plurality of print pins arranged in the plurality of composite print pin holes so as to be selectively extendable beyond the print surface with the guidance of the repaired print pin holes of the second section.
Abstract:
An integrated circuit is provided that includes an active region and at least one interconnect part. The interconnect part is located above the active region, and includes a plurality of metallization levels and at least one test pad. The test pad is located in one of the metallization levels that is beneath a top one of the metallization levels. In a preferred embodiment, the test pad is located beneath supply lines. Also provided is a method for testing such an integrated circuit.
Abstract:
DC voltage levels applied to an integrated circuit are measured using an electron beam. A pulsed signal having a peak voltage dependent upon or representing one of the DC voltage level applied to the integrated circuit is first generated. The pulsed signal is applied to a test zone, and the voltage of the test zone varies according to the pulsed signal. The DC voltage level applied to the test zone on the integrated circuit transforms into a pulsed voltage. An electron beam is then used to measure the voltage of the test zone.
Abstract:
An integrated circuit is provided that includes at least one metallization level having a plurality of dummy conductors. At least one of the dummy conductors has an oriented shape made up of a plurality of non-parallel rectangles in mutual contact. In one embodiment, the at least one dummy conductor is in the form of an “L”. In another embodiment, the at least one dummy conductor is in the form of a Latin cross. In yet another embodiment, the at least one dummy conductor is in the form of a “T”.
Abstract:
A semiconductor circuit that includes components and registration features that are electrically isolated from the components. The registration features form projecting parts that are uniformly distributed in the form of a matrix over at least part of the external surface of the circuit so as to define adjacent registration areas. In a preferred embodiment, the semiconductor circuit also includes metal registration features that are produced in at least one metallization level of the circuit. Also provided is a method of adjusting a tool so as to put it into a particular position with respect to the surface of a semiconductor circuit that has registration features defining adjacent registration areas. According to the method, an at least partial topographic record of the registration features on the surface of the semiconductor circuit is produced, and the registration features of the topographic record are brought into coincidence with reference features of a reference drawing. The reference features of the reference drawing correspond to the registration features of the circuit. The position of the tool is adjusted with respect to at least some of the reference features or registration features.
Abstract:
The invention relates to a test area of an electronic circuit comprising a contact point formed in the surface of a substrate. The test area also includes spaced apart radially extending bosses adjacent the contact point for guiding a test probe positioned on the surface of the substrate to the contact point.
Abstract:
A test structure for integrated electronic circuits having a substantially planar substrate coated with a plurality of metallization layers comprises a switching element formed on the surface of the substrate. It also comprises a tunnel formed in one or more metallization layers between the top of the switching element and the front side of the integrated circuit. This tunnel is designed to channel photons emitted by the switching element towards the front side.
Abstract:
An integrated circuit is provided that includes at least one metallization level having a plurality of dummy conductors. At least one of the dummy conductors has an oriented shape made up of a plurality of non-parallel rectangles in mutual contact. In one embodiment, the at least one dummy conductor is in the form of an “L”. In another embodiment, the at least one dummy conductor is in the form of a Latin cross. In yet another embodiment, the at least one dummy conductor is in the form of a “T”.
Abstract:
The present invention relates to an integrated circuit test pad implemented in a surface metallization layer covered with an insulating coating. The pad is surrounded with a first metal ring made in the surface metallization layer and with a second metal ring made in a lower metallization surface, the first and second rings being electrically interconnected by at least one via and set to a fixed potential.