公开(公告)号：US20180102273A1

公开(公告)日：2018-04-12

申请号：US15290234

申请日：2016-10-11

Applicant: Micron Technology, Inc.

Inventor： Andy E. Hooper

IPC: H01L21/683 ,  H01L21/677 ,  B25J15/06 ,  B65G47/91

CPC classification number: H01L21/6838 ,  H01L21/67132

Abstract: Systems and methods for releasing semiconductor devices during pick and place operations are disclosed. A representative system for handling semiconductor dies comprises a support member positioned to carry at least one semiconductor die releasably attached to a support substrate. The system further includes a picking device having a pick head coupleable to a vacuum source and positioned to releasably attach to the semiconductor die at a pick station. The system still further incudes a release station having a fluid delivery device coupleable to a source of release fluid, the fluid delivery device having an exit positioned to direct release fluid toward a semiconductor die carried by the support member at the release station.

公开(公告)号：US10373857B2

公开(公告)日：2019-08-06

申请号：US16017567

申请日：2018-06-25

Applicant: Micron Technology, Inc.

Inventor： Andy E. Hooper ,  Nicholas Wade Clyde

IPC: H01L21/683 ,  H01L21/02 ,  B23K26/364 ,  H01L21/67 ,  H01L21/78 ,  H01L21/268 ,  B23K101/40

Abstract: A method of forming a plurality of semiconductor devices includes applying a tape material to a back side of a semiconductor device having a silicon layer on the back side and a circuitry layer on the front side, lasing with an infrared laser the silicon layer through the tape material, lasing with a second laser the circuitry layer, and expanding the tape material for form a plurality of semiconductor devices. The second layer may be an ultraviolet laser. The lasers may be irradiated in a pattern on the bottom side and the top side. The second layer may form a groove in the circuitry layer that does not penetrate the silicon layer. The infrared laser may cleave a portion of the silicon lattice of the silicon layer. A coating may be applied to the circuitry layer prior to being irradiated with the second laser.

公开(公告)号：US10340173B2

公开(公告)日：2019-07-02

申请号：US15290234

申请日：2016-10-11

Applicant: Micron Technology, Inc.

Inventor： Andy E. Hooper

IPC: H01L21/683 ,  H01L21/67

Abstract: Systems and methods for releasing semiconductor devices during pick and place operations are disclosed. A representative system for handling semiconductor dies comprises a support member positioned to carry at least one semiconductor die releasably attached to a support substrate. The system further includes a picking device having a pick head coupleable to a vacuum source and positioned to releasably attach to the semiconductor die at a pick station. The system still further incudes a release station having a fluid delivery device coupleable to a source of release fluid, the fluid delivery device having an exit positioned to direct release fluid toward a semiconductor die carried by the support member at the release station.

公开(公告)号：US11562922B2

公开(公告)日：2023-01-24

申请号：US17581173

申请日：2022-01-21

Applicant: Micron Technology, Inc.

Inventor： Andy E. Hooper

IPC: H01L21/683 ,  H01L21/67

Abstract: Systems and methods for releasing semiconductor devices during pick and place operations are disclosed. A representative system for handling semiconductor dies comprises a support member positioned to carry at least one semiconductor die releasably attached to a support substrate. The system further includes a picking device having a pick head coupleable to a vacuum source and positioned to releasably attach to the semiconductor die at a pick station. The system still further includes a release station having a fluid delivery device coupleable to a source of release fluid, the fluid delivery device having an exit positioned to direct release fluid toward a semiconductor die carried by the support member at the release station.

公开(公告)号：US09070656B2

公开(公告)日：2015-06-30

申请号：US13915778

申请日：2013-06-12

Applicant: Micron Technology, Inc.

Inventor： Andy E. Hooper ,  Xiao Li ,  Shijian Luo

IPC: H01L23/34 ,  H01L23/36 ,  H01L23/10 ,  H01L23/367 ,  H01L21/56 ,  H01L25/065 ,  H01L23/00

CPC classification number: H01L23/36 ,  H01L21/563 ,  H01L23/10 ,  H01L23/3675 ,  H01L23/42 ,  H01L23/4275 ,  H01L24/16 ,  H01L24/32 ,  H01L24/73 ,  H01L24/83 ,  H01L25/0657 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2224/83385 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06568 ,  H01L2225/06589 ,  H01L2924/12042 ,  H01L2924/16251 ,  H01L2924/00

Abstract: Heat spreaders for dissipating heat from semiconductor devices comprise a contact surface located within a recess on an underside of the heat spreader, the contact surface being configured to physically and thermally attach to a semiconductor device, and a trench extending into the heat spreader adjacent to the contact surface sized and configured to receive underfill material extending from the semiconductor device into the trench. Related semiconductor device assemblies may include these heat spreaders and methods may include physically and thermally attaching these heat spreaders to semiconductor devices such that underfill material extends from a semiconductor device into the trench.

Abstract translation: 用于从半导体器件散热的散热器包括位于散热器下侧的凹部内的接触表面，该接触表面构造成物理地和热连接到半导体器件，以及延伸到与散热器相邻的散热器中的沟槽 接触表面的尺寸和构造以接收从半导体器件延伸到沟槽中的底部填充材料。 相关的半导体器件组件可以包括这些散热器，并且方法可以包括将这些散热器物理地和热连接到半导体器件，使得底部填充材料从半导体器件延伸到沟槽中。

公开(公告)号：US11232970B2

公开(公告)日：2022-01-25

申请号：US16452374

申请日：2019-06-25

Applicant: Micron Technology, Inc.

Inventor： Andy E. Hooper

IPC: H01L21/683 ,  H01L21/67

Abstract: Systems and methods for releasing semiconductor devices during pick and place operations are disclosed. A representative system for handling semiconductor dies comprises a support member positioned to carry at least one semiconductor die releasably attached to a support substrate. The system further includes a picking device having a pick head coupleable to a vacuum source and positioned to releasably attach to the semiconductor die at a pick station. The system still further includes a release station having a fluid delivery device coupleable to a source of release fluid, the fluid delivery device having an exit positioned to direct release fluid toward a semiconductor die carried by the support member at the release station.

公开(公告)号：US10079169B1

公开(公告)日：2018-09-18

申请号：US15797029

申请日：2017-10-30

Applicant: Micron Technology, Inc.

Inventor： Andy E. Hooper ,  Nicholas Wade Clyde

IPC: H01L21/78 ,  H01L21/683 ,  H01L21/268 ,  H01L21/67 ,  B23K26/364 ,  H01L21/02 ,  B23K101/40

CPC classification number: H01L21/6836 ,  B23K26/009 ,  B23K26/364 ,  B23K2101/40 ,  H01L21/02057 ,  H01L21/268 ,  H01L21/67092 ,  H01L21/78 ,  H01L2221/68327 ,  H01L2221/68336

Abstract: A method of forming a plurality of semiconductor devices includes applying a tape material to a back side of a semiconductor device having a silicon layer on the back side and a circuitry layer on the front side, lasing with an infrared laser the silicon layer through the tape material, lasing with a second laser the circuitry layer, and expanding the tape material for form a plurality of semiconductor devices. The second layer may be an ultraviolet laser. The lasers may be irradiated in a pattern on the bottom side and the top side. The second layer may form a groove in the circuitry layer that does not penetrate the silicon layer. The infrared laser may cleave a portion of the silicon lattice of the silicon layer. A coating may be applied to the circuitry layer prior to being irradiated with the second laser.

公开(公告)号：US20220148906A1

公开(公告)日：2022-05-12

申请号：US17581173

申请日：2022-01-21

Applicant: Micron Technology, Inc.

Inventor： Andy E. Hooper

IPC: H01L21/683 ,  H01L21/67

Abstract: Systems and methods for releasing semiconductor devices during pick and place operations are disclosed. A representative system for handling semiconductor dies comprises a support member positioned to carry at least one semiconductor die releasably attached to a support substrate. The system further includes a picking device having a pick head coupleable to a vacuum source and positioned to releasably attach to the semiconductor die at a pick station. The system still further includes a release station having a fluid delivery device coupleable to a source of release fluid, the fluid delivery device having an exit positioned to direct release fluid toward a semiconductor die carried by the support member at the release station.

公开(公告)号：US20190311939A1

公开(公告)日：2019-10-10

申请号：US16452374

申请日：2019-06-25

Applicant: Micron Technology, Inc.

Inventor： Andy E. Hooper

IPC: H01L21/683 ,  H01L21/67

Abstract: Systems and methods for releasing semiconductor devices during pick and place operations are disclosed. A representative system for handling semiconductor dies comprises a support member positioned to carry at least one semiconductor die releasably attached to a support substrate. The system further includes a picking device having a pick head coupleable to a vacuum source and positioned to releasably attach to the semiconductor die at a pick station. The system still further includes a release station having a fluid delivery device coupleable to a source of release fluid, the fluid delivery device having an exit positioned to direct release fluid toward a semiconductor die carried by the support member at the release station.

公开(公告)号：US20190131160A1

公开(公告)日：2019-05-02

申请号：US16017567

申请日：2018-06-25

Applicant: Micron Technology, Inc.

Inventor： Andy E. Hooper ,  Nicholas Wade Clyde

IPC: H01L21/683 ,  H01L21/02 ,  B23K26/364

CPC classification number: H01L21/6836 ,  B23K26/009 ,  B23K26/364 ,  B23K2101/40 ,  H01L21/02057 ,  H01L21/268 ,  H01L21/67092 ,  H01L21/78 ,  H01L2221/68327 ,  H01L2221/68336

Abstract: A method of forming a plurality of semiconductor devices includes applying a tape material to a back side of a semiconductor device having a silicon layer on the back side and a circuitry layer on the front side, lasing with an infrared laser the silicon layer through the tape material, lasing with a second laser the circuitry layer, and expanding the tape material for form a plurality of semiconductor devices. The second layer may be an ultraviolet laser. The lasers may be irradiated in a pattern on the bottom side and the top side. The second layer may form a groove in the circuitry layer that does not penetrate the silicon layer. The infrared laser may cleave a portion of the silicon lattice of the silicon layer. A coating may be applied to the circuitry layer prior to being irradiated with the second laser.