公开(公告)号：US20240074177A1

公开(公告)日：2024-02-29

申请号：US17822101

申请日：2022-08-24

Applicant: Micron Technology, Inc.

Inventor： David H. Wells ,  Justin D. Shepherdson ,  Swapnil A. Lengade ,  Collin Howder ,  Dheeraj Kumar ,  Andrew L. Li

IPC: H01L27/11582 ,  H01L27/11556

CPC classification number: H01L27/11582 ,  H01L27/11556

Abstract: Microelectronic devices include a region with a tiered stack that includes insulative, conductive, and non-conductive structures arranged in tiers. The insulative structures vertically alternate with both the conductive and the non-conductive structures. Each of the conductive structures is vertically spaced from another of the conductive structures by at least one of the non-conductive structures and at least two of the insulative structures. A composition of the non-conductive structures differs from a composition of the insulative structures. In methods of fabrication, a precursor stack is formed to include the insulative structures vertically alternating with first and second non-conductive structures. In a region of the precursor stack, the first non-conductive structures are removed, forming voids between multi-structure tier groups. Conductive structures are formed in the voids. Electronic systems are also disclosed.