公开(公告)号：US08759143B1

公开(公告)日：2014-06-24

申请号：US14173454

申请日：2014-02-05

Applicant: Micron Technology, Inc.

Inventor： Fabio Pelizzer ,  Cinzia Perrone

IPC: H01L21/00 ,  H01L45/00 ,  H01L21/311 ,  H01L21/02

CPC classification number: H01L21/31111 ,  H01L21/02115 ,  H01L27/2409 ,  H01L45/06 ,  H01L45/126 ,  H01L45/144 ,  H01L45/1608 ,  H01L45/1675

Abstract: Some embodiments include methods of forming semiconductor constructions. Carbon-containing material is formed over oxygen-sensitive material. The carbon-containing material and oxygen-sensitive material together form a structure having a sidewall that extends along both the carbon-containing material and the oxygen-sensitive material. First protective material is formed along the sidewall. The first protective material extends across an interface of the carbon-containing material and the oxygen-sensitive material, and does not extend to a top region of the carbon-containing material. Second protective material is formed across the top of the carbon-containing material, with the second protective material having a common composition to the first protective material. The second protective material is etched to expose an upper surface of the carbon-containing material. Some embodiments include semiconductor constructions, memory arrays and methods of forming memory arrays.

Abstract translation: 一些实施例包括形成半导体结构的方法。 含氧材料在氧敏感材料上形成。 含碳材料和氧敏感材料一起形成具有沿着含碳材料和氧敏感材料两者延伸的侧壁的结构。 第一保护材料沿侧壁形成。 第一保护材料延伸穿过含碳材料和氧敏感材料的界面，并且不延伸到含碳材料的顶部区域。 第二保护材料横跨含碳材料的顶部形成，第二保护材料与第一保护材料具有共同的组成。 蚀刻第二保护材料以暴露含碳材料的上表面。 一些实施例包括半导体构造，存储器阵列和形成存储器阵列的方法。