公开(公告)号：US20210005626A1

公开(公告)日：2021-01-07

申请号：US16983664

申请日：2020-08-03

Applicant: Micron Technology, Inc.

Inventor： Akira Goda ,  Haitao Liu ,  Jin Chen ,  Guangyu Huang ,  Mojtaba Asadirad

IPC: H01L27/11573 ,  G11C16/08 ,  G11C16/24 ,  H01L21/02 ,  H01L23/528 ,  H01L23/532 ,  H01L27/11526 ,  H01L27/11556 ,  H01L27/11582 ,  H01L29/04 ,  H01L29/16 ,  H01L29/36 ,  H01L29/66 ,  H01L29/78 ,  G11C16/04

Abstract: Some embodiments include apparatuses, and methods of forming the apparatuses. Some of the apparatuses include a first group of conductive materials interleaved with a first group of dielectric materials, a pillar extending through the conductive materials and the dielectric materials, memory cells located along the first pillar, a conductive contact coupled to a conductive material of the first group of conductive materials, and additional pillars extending through a second group of conductive materials and a second group of dielectric materials. The second pillar includes a first portion coupled to a conductive region, a second portion, a third portion, and a fourth portion coupled to the conductive contact. The second portion is located between the first and third portions. The second portion of each of the additional pillars is part of a piece of material extending from a first pillar to a second pillar of the additional pillars.

公开(公告)号：US10734399B2

公开(公告)日：2020-08-04

申请号：US15858509

申请日：2017-12-29

Applicant: Micron Technology, Inc.

Inventor： Akira Goda ,  Haitao Liu ,  Jin Chen ,  Guangyu Huang ,  Mojtaba Asadirad

IPC: H01L27/11573 ,  H01L27/11582 ,  H01L27/11578 ,  H01L27/11556 ,  H01L27/11551 ,  H01L27/11526 ,  G11C16/26 ,  G11C16/24 ,  G11C16/14 ,  G11C16/10 ,  H01L23/528 ,  H01L29/36 ,  H01L29/04 ,  H01L21/02 ,  H01L29/78 ,  H01L29/66 ,  H01L29/16 ,  H01L23/532 ,  G11C16/08 ,  G11C16/04 ,  H01L29/08

Abstract: Some embodiments include apparatuses, and methods of forming the apparatuses. Some of the apparatuses include a first group of conductive materials interleaved with a first group of dielectric materials, a pillar extending through the conductive materials and the dielectric materials, memory cells located along the first pillar, a conductive contact coupled to a conductive material of the first group of conductive materials, and additional pillars extending through a second group of conductive materials and a second group of dielectric materials. The second pillar includes a first portion coupled to a conductive region, a second portion, a third portion, and a fourth portion coupled to the conductive contact. The second portion is located between the first and third portions. The second portion of each of the additional pillars is part of a piece of material extending from a first pillar to a second pillar of the additional pillars.