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公开(公告)号：US10991427B2
公开(公告)日：2021-04-27
申请号：US16422690
申请日：2019-05-24
Applicant: Micron Technology, Inc.
Inventor： Jonathan Strand , Adam Johnson , Xiaonan Chen , Durai Vishak Nirmal Ramaswamy
Abstract: Memory programming methods and memory systems are described. One example memory programming method includes first applying a first signal to a memory cell to attempt to program the memory cell to a desired state, wherein the first signal corresponds to the desired state, after the first applying, determining that the memory cell failed to place in the desired state, after the determining, second applying a second signal to the memory cell, wherein the second signal corresponds to another state which is different than the desired state, and after the second applying, third applying a third signal to the memory cell to program the memory cell to the desired state, wherein the third signal corresponds to the desired state. Additional method and apparatus are described.
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公开(公告)号：US20170365339A1
公开(公告)日：2017-12-21
申请号：US15690744
申请日：2017-08-30
Applicant: Micron Technology, Inc.
Inventor： Jonathan Strand , Adam Johnson , Xiaonan Chen , Durai Vishak Nirmal Ramaswamy
CPC classification number: G11C13/0069 , G11C13/00 , G11C13/0002 , G11C13/0007 , G11C13/0064 , G11C29/08 , G11C29/50008 , G11C2013/0073 , G11C2029/0409 , G11C2029/5006
Abstract: Memory programming methods and memory systems are described. One example memory programming method includes first applying a first signal to a memory cell to attempt to program the memory cell to a desired state, wherein the first signal corresponds to the desired state, after the first applying, determining that the memory cell failed to place in the desired state, after the determining, second applying a second signal to the memory cell, wherein the second signal corresponds to another state which is different than the desired state, and after the second applying, third applying a third signal to the memory cell to program the memory cell to the desired state, wherein the third signal corresponds to the desired state. Additional method and apparatus are described.
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公开(公告)号：US09773551B2
公开(公告)日：2017-09-26
申请号：US14987630
申请日：2016-01-04
Applicant: Micron Technology, Inc.
Inventor： Jonathan Strand , Adam Johnson , Xiaonan Chen , Durai Vishak Nirmal Ramaswamy
CPC classification number: G11C13/0069 , G11C13/00 , G11C13/0002 , G11C13/0007 , G11C13/0064 , G11C29/08 , G11C29/50008 , G11C2013/0073 , G11C2029/0409 , G11C2029/5006
Abstract: Memory programming methods and memory systems are described. One example memory programming method includes first applying a first signal to a memory cell to attempt to program the memory cell to a desired state, wherein the first signal corresponds to the desired state, after the first applying, determining that the memory cell failed to place in the desired state, after the determining, second applying a second signal to the memory cell, wherein the second signal corresponds to another state which is different than the desired state, and after the second applying, third applying a third signal to the memory cell to program the memory cell to the desired state, wherein the third signal corresponds to the desired state. Additional method and apparatus are described.
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Patent Agency Ranking
公开(公告)号：US20160118119A1
公开(公告)日：2016-04-28
申请号：US14987630
申请日：2016-01-04
Applicant: Micron Technology, Inc.
Inventor： Jonathan Strand , Adam Johnson , Xiaonan Chen , Durai Vishak Nirmal Ramaswamy
IPC: G11C13/00
CPC classification number: G11C13/0069 , G11C13/00 , G11C13/0002 , G11C13/0007 , G11C13/0064 , G11C29/08 , G11C29/50008 , G11C2013/0073 , G11C2029/0409 , G11C2029/5006
Abstract: Memory programming methods and memory systems are described. One example memory programming method includes first applying a first signal to a memory cell to attempt to program the memory cell to a desired state, wherein the first signal corresponds to the desired state, after the first applying, determining that the memory cell failed to place in the desired state, after the determining, second applying a second signal to the memory cell, wherein the second signal corresponds to another state which is different than the desired state, and after the second applying, third applying a third signal to the memory cell to program the memory cell to the desired state, wherein the third signal corresponds to the desired state. Additional method and apparatus are described.
Abstract translation: 描述了存储器编程方法和存储器系统。 一个示例性存储器编程方法包括：首先将第一信号施加到存储器单元以尝试将存储器单元编程到期望状态，其中第一信号对应于期望状态，在第一次施加之后，确定存储器单元不能放置 在所需状态下，在确定之后，向存储单元施加第二信号，其中第二信号对应于与期望状态不同的另一状态，并且在第二次施加之后，第三信号施加到存储单元 将存储器单元编程到所需状态，其中第三信号对应于期望状态。 描述附加的方法和装置。
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公开(公告)号：US20190279713A1
公开(公告)日：2019-09-12
申请号：US16422690
申请日：2019-05-24
Applicant: Micron Technology, Inc.
Inventor： Jonathan Strand , Adam Johnson , Xiaonan Chen , Durai Vishak Nirmal Ramaswamy
Abstract: Memory programming methods and memory systems are described. One example memory programming method includes first applying a first signal to a memory cell to attempt to program the memory cell to a desired state, wherein the first signal corresponds to the desired state, after the first applying, determining that the memory cell failed to place in the desired state, after the determining, second applying a second signal to the memory cell, wherein the second signal corresponds to another state which is different than the desired state, and after the second applying, third applying a third signal to the memory cell to program the memory cell to the desired state, wherein the third signal corresponds to the desired state. Additional method and apparatus are described.
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公开(公告)号：US20140112052A1
公开(公告)日：2014-04-24
申请号：US13658519
申请日：2012-10-23
Applicant: MICRON TECHNOLOGY, INC.
Inventor： Jonathan Strand , Adam Johnson , Xiaonan Chen , D.V. Nirmal Ramaswamy
CPC classification number: G11C13/0069 , G11C13/00 , G11C13/0002 , G11C13/0007 , G11C13/0064 , G11C29/08 , G11C29/50008 , G11C2013/0073 , G11C2029/0409 , G11C2029/5006
Abstract: Memory programming methods and memory systems are described. One example memory programming method includes first applying a first signal to a memory cell to attempt to program the memory cell to a desired state, wherein the first signal corresponds to the desired state, after the first applying, determining that the memory cell failed to place in the desired state, after the determining, second applying a second signal to the memory cell, wherein the second signal corresponds to another state which is different than the desired state, and after the second applying, third applying a third signal to the memory cell to program the memory cell to the desired state, wherein the third signal corresponds to the desired state. Additional method and apparatus are described.
Abstract translation: 描述了存储器编程方法和存储器系统。 一个示例性存储器编程方法包括：首先将第一信号施加到存储器单元以尝试将存储器单元编程到期望状态，其中第一信号对应于期望状态，在第一次施加之后，确定存储器单元不能放置 在所需状态下，在确定之后，向存储单元施加第二信号，其中第二信号对应于与期望状态不同的另一状态，并且在第二次施加之后，第三信号施加到存储单元 将存储器单元编程到所需状态，其中第三信号对应于期望状态。 描述附加的方法和装置。
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公开(公告)号：US10304531B2
公开(公告)日：2019-05-28
申请号：US15690744
申请日：2017-08-30
Applicant: Micron Technology, Inc.
Inventor： Jonathan Strand , Adam Johnson , Xiaonan Chen , Durai Vishak Nirmal Ramaswamy
Abstract: Memory programming methods and memory systems are described. One example memory programming method includes first applying a first signal to a memory cell to attempt to program the memory cell to a desired state, wherein the first signal corresponds to the desired state, after the first applying, determining that the memory cell failed to place in the desired state, after the determining, second applying a second signal to the memory cell, wherein the second signal corresponds to another state which is different than the desired state, and after the second applying, third applying a third signal to the memory cell to program the memory cell to the desired state, wherein the third signal corresponds to the desired state. Additional method and apparatus are described.
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公开(公告)号：US09230685B2
公开(公告)日：2016-01-05
申请号：US13658519
申请日：2012-10-23
Applicant: Micron Technology, Inc.
Inventor： Jonathan Strand , Adam Johnson , Xiaonan Chen , D. V. Nirmal Ramaswamy
CPC classification number: G11C13/0069 , G11C13/00 , G11C13/0002 , G11C13/0007 , G11C13/0064 , G11C29/08 , G11C29/50008 , G11C2013/0073 , G11C2029/0409 , G11C2029/5006
Abstract: Memory programming methods and memory systems are described. One example memory programming method includes first applying a first signal to a memory cell to attempt to program the memory cell to a desired state, wherein the first signal corresponds to the desired state, after the first applying, determining that the memory cell failed to place in the desired state, after the determining, second applying a second signal to the memory cell, wherein the second signal corresponds to another state which is different than the desired state, and after the second applying, third applying a third signal to the memory cell to program the memory cell to the desired state, wherein the third signal corresponds to the desired state. Additional method and apparatus are described.
Abstract translation: 描述了存储器编程方法和存储器系统。 一个示例性存储器编程方法包括：首先将第一信号施加到存储器单元以尝试将存储器单元编程到期望状态，其中第一信号对应于期望状态，在第一次施加之后，确定存储器单元不能放置 在所需状态下，在确定之后，向存储单元施加第二信号，其中第二信号对应于与期望状态不同的另一状态，并且在第二次施加之后，第三信号施加到存储单元 将存储器单元编程到所需状态，其中第三信号对应于期望状态。 描述附加的方法和装置。
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