公开(公告)号：US20240215246A1

公开(公告)日：2024-06-27

申请号：US18596580

申请日：2024-03-05

Applicant: Micron Technology, Inc.

Inventor： Swapnil A. Lengade ,  Jeremy Adams ,  Naiming Liu ,  Jeslin J. Wu ,  Kadir Abdul ,  Carlo Mendoza Orofeo

IPC: H10B43/27 ,  H01L21/02 ,  H10B41/27

CPC classification number: H10B43/27 ,  H01L21/0217 ,  H01L21/02266 ,  H01L21/02274 ,  H10B41/27

Abstract: A method of forming a microelectronic device comprises forming a stack structure comprising a vertically alternating sequence of insulative structures and additional insulative structures, at least some of the additional insulative structures comprising silicon nitride having a ratio of nitrogen atoms to silicon atoms greater than about 1.58:1.00, forming openings through the stack structure, and forming cell pillar structures within the openings, the cell pillar structures individually comprising a semiconductor channel material vertically extending through the stack structure. Related methods, microelectronic devices, memory devices, and electronic systems are also described.

公开(公告)号：US12004346B2

公开(公告)日：2024-06-04

申请号：US17200169

申请日：2021-03-12

Applicant: Micron Technology, Inc.

Inventor： Swapnil Lengade ,  Jeremy Adams ,  Naiming Liu ,  Jeslin J. Wu ,  Kadir Abdul ,  Carlo Mendoza Orofeo

IPC: H10B43/27 ,  H01L21/02 ,  H10B41/27

CPC classification number: H10B43/27 ,  H01L21/0217 ,  H01L21/02266 ,  H01L21/02274 ,  H10B41/27

Abstract: A method of forming a microelectronic device comprises forming a stack structure comprising a vertically alternating sequence of insulative structures and additional insulative structures, at least some of the additional insulative structures comprising silicon nitride having a ratio of nitrogen atoms to silicon atoms greater than about 1.58:1.00, forming openings through the stack structure, and forming cell pillar structures within the openings, the cell pillar structures individually comprising a semiconductor channel material vertically extending through the stack structure. Related methods, microelectronic devices, memory devices, and electronic systems are also described.