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    Memory cells and methods of forming memory cells
    3.
    发明授权
    Memory cells and methods of forming memory cells 有权
    记忆细胞和形成记忆细胞的方法

    公开(公告)号：US09153776B2

    公开(公告)日：2015-10-06

    申请号：US14070374

    申请日：2013-11-01

    Applicant: Micron Technology, Inc.

    Inventor： Martin Schubert ,  Scott E. Sills ,  D. V. Nirmal Ramaswamy

    IPC: H01L45/00

    CPC classification number: H01L45/1266 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/146 ,  H01L45/147 ,  H01L45/16 ,  H01L45/1608

    Abstract: Some embodiments include a memory cell having an electrode and a switching material over the electrode. The electrode is a first composition which includes a first metal and a second metal. The switching material is a second composition which includes the second metal. The second composition is directly against the first composition. Some embodiments include methods of forming memory cells.

    Abstract translation: 一些实施例包括在电极上方具有电极和开关材料的存储单元。 电极是包括第一金属和第二金属的第一组合物。 开关材料是包括第二金属的第二组合物。 第二组合物直接抵抗第一组合物。 一些实施例包括形成存储器单元的方法。

    Memory cells and methods of forming memory cells
    4.
    发明授权
    Memory cells and methods of forming memory cells 有权
    记忆细胞和形成记忆细胞的方法

    公开(公告)号：US09496495B2

    公开(公告)日：2016-11-15

    申请号：US15176609

    申请日：2016-06-08

    Applicant: Micron Technology, Inc.

    Inventor： Martin Schubert ,  Shu Qin ,  Scott E. Sills ,  Durai Vishak Nirmal Ramaswamy ,  Allen McTeer ,  Yongjun Jeff Hu

    IPC: H01L21/20 ,  H01L45/00

    CPC classification number: H01L45/1608 ,  H01L45/08 ,  H01L45/085 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/1266 ,  H01L45/141 ,  H01L45/146 ,  H01L45/16

    Abstract: Some embodiments include a memory cell having a first electrode, and an intermediate material over and directly against the first electrode. The intermediate material includes stabilizing species corresponding to one or both of carbon and boron. The memory cell also has a switching material over and directly against the intermediate material, an ion reservoir material over the switching material, and a second electrode over the ion reservoir material. Some embodiments include methods of forming memory cells.

    Abstract translation: 一些实施例包括具有第一电极的存储器单元，以及在第一电极之上并直接抵靠第一电极的中间材料。 中间材料包括对应于碳和硼之一或两者的稳定物质。 存储单元还具有超过并直接抵靠中间材料的开关材料，开关材料上方的离子储存器材料以及离子储存器材料上的第二电极。 一些实施例包括形成存储器单元的方法。

    Memory Cells and Methods of Forming Memory Cells
    6.
    发明申请
    Memory Cells and Methods of Forming Memory Cells 有权
    记忆细胞和形成记忆细胞的方法

    公开(公告)号：US20150123064A1

    公开(公告)日：2015-05-07

    申请号：US14070374

    申请日：2013-11-01

    Applicant: Micron Technology, Inc.

    Inventor： Martin Schubert ,  Scott E. Sills ,  D.V. Nirmal Ramaswamy

    IPC: H01L45/00

    CPC classification number: H01L45/1266 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/146 ,  H01L45/147 ,  H01L45/16 ,  H01L45/1608

    Abstract: Some embodiments include a memory cell having an electrode and a switching material over the electrode. The electrode is a first composition which includes a first metal and a second metal. The switching material is a second composition which includes the second metal. The second composition is directly against the first composition. Some embodiments include methods of forming memory cells.

    Abstract translation: 一些实施例包括在电极上方具有电极和开关材料的存储单元。 电极是包括第一金属和第二金属的第一组合物。 开关材料是包括第二金属的第二组合物。 第二组合物直接抵抗第一组合物。 一些实施例包括形成存储器单元的方法。

    Memory Cells and Methods of Forming Memory Cells
    10.
    发明申请
    Memory Cells and Methods of Forming Memory Cells 有权
    记忆细胞和形成记忆细胞的方法

    公开(公告)号：US20150179936A1

    公开(公告)日：2015-06-25

    申请号：US14618936

    申请日：2015-02-10

    Applicant: Micron Technology, Inc.

    Inventor： Martin Schubert ,  Shu Qin ,  Scott E. Sills ,  Durai Vishak Nirmal Ramaswamy ,  Allen McTeer ,  Yongjun Jeff Hu

    IPC: H01L45/00

    CPC classification number: H01L45/1608 ,  H01L45/08 ,  H01L45/085 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/1266 ,  H01L45/141 ,  H01L45/146 ,  H01L45/16

    Abstract: Some embodiments include a memory cell having a first electrode, and an intermediate material over and directly against the first electrode. The intermediate material includes stabilizing species corresponding to one or both of carbon and boron. The memory cell also has a switching material over and directly against the intermediate material, an ion reservoir material over the switching material, and a second electrode over the ion reservoir material. Some embodiments include methods of forming memory cells.

    Abstract translation: 一些实施例包括具有第一电极的存储器单元，以及在第一电极之上并直接抵靠第一电极的中间材料。 中间材料包括对应于碳和硼之一或两者的稳定物质。 存储单元还具有超过并直接抵靠中间材料的开关材料，开关材料上方的离子储存器材料以及离子储存器材料上的第二电极。 一些实施例包括形成存储器单元的方法。

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