公开(公告)号：US20240357837A1

公开(公告)日：2024-10-24

申请号：US18642555

申请日：2024-04-22

Applicant: Micron Technology, Inc.

Inventor： Darwin A. Clampitt ,  Stephen W. Russell ,  Steven P. Turini ,  Farrell M. Good ,  Kolya Yastrebenetsky ,  Nirav Vora ,  Zhao Zhao

IPC: H10B63/00 ,  H10B63/10

CPC classification number: H10B63/845 ,  H10B63/10

Abstract: Methods, systems, and devices for contact formation for a memory device are described. A memory device manufacturing operation may include forming bit lines and word lines in a same step. In some cases, the memory device may include word line contact portions that couple respective word lines with respective word line contacts located below the word lines. For example, the word line contact portions may be located between word lines and a substrate of the memory array. In such cases, the processing step may be used for formation of word lines, bit lines, and word line contact portions. Additionally, or alternatively, the memory device manufacturing operation may include forming a sacrificial ring around bit line contacts, which may isolate bit line contacts from a nitride layer.