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    CONTACT FORMATION FOR A MEMORY DEVICE
    2.
    发明公开
    CONTACT FORMATION FOR A MEMORY DEVICE 审中-公开

    公开(公告)号：US20240357837A1

    公开(公告)日：2024-10-24

    申请号：US18642555

    申请日：2024-04-22

    Applicant: Micron Technology, Inc.

    Inventor： Darwin A. Clampitt ,  Stephen W. Russell ,  Steven P. Turini ,  Farrell M. Good ,  Kolya Yastrebenetsky ,  Nirav Vora ,  Zhao Zhao

    IPC: H10B63/00 ,  H10B63/10

    CPC classification number: H10B63/845 ,  H10B63/10

    Abstract: Methods, systems, and devices for contact formation for a memory device are described. A memory device manufacturing operation may include forming bit lines and word lines in a same step. In some cases, the memory device may include word line contact portions that couple respective word lines with respective word line contacts located below the word lines. For example, the word line contact portions may be located between word lines and a substrate of the memory array. In such cases, the processing step may be used for formation of word lines, bit lines, and word line contact portions. Additionally, or alternatively, the memory device manufacturing operation may include forming a sacrificial ring around bit line contacts, which may isolate bit line contacts from a nitride layer.

    METHODS OF FORMING ELECTRONIC DEVICES COMPRISING SILICON CARBIDE MATERIALS
    4.
    发明申请
    METHODS OF FORMING ELECTRONIC DEVICES COMPRISING SILICON CARBIDE MATERIALS 有权

    公开(公告)号：US20220262628A1

    公开(公告)日：2022-08-18

    申请号：US17661966

    申请日：2022-05-04

    Applicant: Micron Technology, Inc.

    Inventor： Santanu Sarkar ,  Farrell M. Good

    IPC: H01L21/02 ,  C23C16/452 ,  C23C16/04 ,  C01B32/00 ,  C01B33/00

    Abstract: An electronic device comprising a stack structure comprising one or more stacks of materials and one or more silicon carbide materials adjacent to the one or more stacks of materials. The materials of the one or more stacks comprise a single chalcogenide material and one or more of a conductive carbon material, a conductive material, and a hardmask material. The one or more silicon carbide materials comprises silicon carbide, silicon carboxide, silicon carbonitride, silicon carboxynitride, and also comprise silicon-carbon covalent bonds. The one or more silicon carbide materials is configured as a liner or as a seal. Additional electronic devices are disclosed, as are related systems and methods of forming an electronic device.

    Methods of forming semiconductor structures including multi-portion liners
    5.
    发明授权
    Methods of forming semiconductor structures including multi-portion liners 有权

    公开(公告)号：US10665782B2

    公开(公告)日：2020-05-26

    申请号：US16110760

    申请日：2018-08-23

    Applicant: Micron Technology, Inc.

    Inventor： Kyle B. Campbell ,  Irina Vasilyeva ,  Farrell M. Good ,  Vishwanath Bhat ,  Kyuchul Chong

    IPC: H01L45/00 ,  H01L27/24 ,  H01L21/768

    Abstract: A method of forming a semiconductor structure. The method comprises forming a protective portion of a liner on at least a portion of stack structures on a substrate. The protective portion comprises a material formulated to adhere to the stack structures. A conformal portion of the liner is formed on the protective portion of the liner or on the protective portion of the liner and exposed materials of the stack structures. At least one of the protective portion and the conformal portion does not comprise aluminum. Additional methods of forming a semiconductor structure are disclosed, as are semiconductor structures including the liners comprising the protective portion and the conformal portion.

    ELECTRONIC DEVICES COMPRISING SILICON CARBIDE MATERIALS AND RELATED METHODS AND SYSTEMS
    6.
    发明申请
    ELECTRONIC DEVICES COMPRISING SILICON CARBIDE MATERIALS AND RELATED METHODS AND SYSTEMS 有权

    公开(公告)号：US20210233768A1

    公开(公告)日：2021-07-29

    申请号：US16751049

    申请日：2020-01-23

    Applicant: Micron Technology, Inc.

    Inventor： Santanu Sarkar ,  Farrell M. Good

    IPC: H01L21/02 ,  C23C16/04 ,  C23C16/452

    Abstract: An electronic device comprising a stack structure comprising one or more stacks of materials and one or more silicon carbide materials adjacent to the one or more stacks of materials. The materials of the one or more stacks comprise a single chalcogenide material and one or more of a conductive carbon material, a conductive material, and a hardmask material. The one or more silicon carbide materials comprises silicon carbide, silicon carboxide, silicon carbonitride, silicon carboxynitride, and also comprise silicon-carbon covalent bonds. The one or more silicon carbide materials is configured as a liner or as a seal. Additional electronic devices are disclosed, as are related systems and methods of forming an electronic device.

    Methods of forming devices including multi-portion liners
    7.
    发明授权
    Methods of forming devices including multi-portion liners 有权

    公开(公告)号：US11050020B2

    公开(公告)日：2021-06-29

    申请号：US16870137

    申请日：2020-05-08

    Applicant: Micron Technology, Inc.

    Inventor： Kyle B. Campbell ,  Irina Vasilyeva ,  Farrell M. Good ,  Vishwanath Bhat ,  Kyuchul Chong

    IPC: H01L45/00 ,  H01L27/24 ,  H01L21/768

    Abstract: A method of forming a semiconductor structure. The method comprises forming a protective portion of a liner on at least a portion of stack structures on a substrate. The protective portion comprises a material formulated to adhere to the stack structures. A conformal portion of the liner is formed on the protective portion of the liner or on the protective portion of the liner and exposed materials of the stack structures. At least one of the protective portion and the conformal portion does not comprise aluminum. Additional methods of forming a semiconductor structure are disclosed, as are semiconductor structures including the liners comprising the protective portion and the conformal portion.

    ELECTRONIC DEVICES COMPRISING METAL OXIDE MATERIALS AND RELATED METHODS AND SYSTEMS
    8.
    发明申请
    ELECTRONIC DEVICES COMPRISING METAL OXIDE MATERIALS AND RELATED METHODS AND SYSTEMS 有权

    公开(公告)号：US20210126193A1

    公开(公告)日：2021-04-29

    申请号：US16665679

    申请日：2019-10-28

    Applicant: Micron Technology, Inc.

    Inventor： Santanu Sarkar ,  Robert K. Grubbs ,  Farrell M. Good ,  Adam W. Saxler ,  Andrea Gotti

    IPC: H01L45/00

    Abstract: An electronic device comprising a stack structure comprising one or more stacks of materials and a metal oxide material adjacent to the stacks of materials. The materials of the stacks comprise one or more chalcogenide materials. The metal oxide material comprises aluminum oxide, aluminum silicate, hafnium oxide, hafnium silicate, zirconium oxide, zirconium silicate, or a combination thereof and the metal oxide material extends continuously from an upper portion of the one or more stacks of materials to a lower portion of the one or more stacks of materials. Additional electronic devices are disclosed, as are related systems and methods of forming an electronic device.

    SEMICONDUCTOR STRUCTURES INCLUDING MULTI-PORTION LINERS AND RELATED METHODS
    10.
    发明申请
    SEMICONDUCTOR STRUCTURES INCLUDING MULTI-PORTION LINERS AND RELATED METHODS 审中-公开
    包括多部分线束的半导体结构及相关方法

    公开(公告)号：US20150287916A1

    公开(公告)日：2015-10-08

    申请号：US14244486

    申请日：2014-04-03

    Applicant: Micron Technology, Inc.

    Inventor： Kyle B. Campbell ,  Irina Vasilyeva ,  Farrell M. Good ,  Vishwanath Bhat ,  Kyuchul Chong

    IPC: H01L45/00 ,  H01L27/24

    CPC classification number: H01L45/1233 ,  H01L21/76832 ,  H01L21/76834 ,  H01L27/2427 ,  H01L45/06 ,  H01L45/12 ,  H01L45/1675

    Abstract: A method of forming a semiconductor structure. The method comprises forming a protective portion of a liner on at least a portion of stack structures on a substrate. The protective portion comprises a material formulated to adhere to the stack structures. A conformal portion of the liner is formed on the protective portion of the liner or on the protective portion of the liner and exposed materials of the stack structures. At least one of the protective portion and the conformal portion does not comprise aluminum. Additional methods of forming a semiconductor structure are disclosed, as are semiconductor structures including the liners comprising the protective portion and the conformal portion.

    Abstract translation: 一种形成半导体结构的方法。 该方法包括在衬底上的至少一部分堆叠结构上形成衬垫的保护部分。 保护部分包括配制成粘附到堆叠结构的材料。 衬垫的保形部分形成在衬垫的保护部分或衬垫的保护部分上以及堆叠结构的暴露的材料上。 保护部分和保形部分中的至少一个不包括铝。 公开了形成半导体结构的附加方法，半导体结构包括包括保护部分和保形部分的衬垫。

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