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公开(公告)号：US11462544B2
公开(公告)日：2022-10-04
申请号：US16161381
申请日：2018-10-16
Applicant: Micron Technology, Inc.
Inventor： Sanh D. Tang , Kamal M. Karda , Wolfgang Mueller , Sourabh Dhir , Robert Kerr , Sangmin Hwang , Haitao Liu
IPC: H01L27/108 , H01L21/762 , H01L29/66 , H01L29/06 , H01L29/78 , H01L29/423 , H01L29/08 , H01L23/528
Abstract: An array of recessed access gate lines includes active area regions having dielectric trench isolation material there-between. The trench isolation material comprises dielectric projections extending into opposing ends of individual active area regions under an elevationally outermost surface of material of the active area regions. The active area material is elevationally over the dielectric projections. Recessed access gate lines individually extend transversally across the active area regions and extend between the ends of immediately end-to-end adjacent active area regions within the dielectric trench isolation material. Other arrays are disclosed, as are methods.
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Patent Agency Ranking
公开(公告)号：US10163908B2
公开(公告)日：2018-12-25
申请号：US15005360
申请日：2016-01-25
Applicant: Micron Technology, Inc.
Inventor： Sanh D. Tang , Kamal M. Karda , Wolfgang Mueller , Sourabh Dhir , Robert Kerr , Sangmin Hwang , Haitao Liu
IPC: H01L27/108 , H01L21/762 , H01L29/06 , H01L29/66 , H01L23/528
Abstract: An array of recessed access gate lines includes active area regions having dielectric trench isolation material there-between. The trench isolation material comprises dielectric projections extending into opposing ends of individual active area regions under an elevationally outermost surface of material of the active area regions. The active area material is elevationally over the dielectric projections. Recessed access gate lines individually extend transversally across the active area regions and extend between the ends of immediately end-to-end adjacent active area regions within the dielectric trench isolation material. Other arrays are disclosed, as are methods.
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3.发明申请Arrays Of Recessed Access Gate Lines, Arrays Of Conductive Lines, Arrays Of Recessed Access Gate Lines And Conductive Lines, And Memory Circuitry 审中-公开嵌入式入口栅极阵列，导电线阵列，嵌入式栅极线和导电线阵列以及存储器电路公开(公告)号：US20160155745A1
公开(公告)日：2016-06-02
申请号：US15005360
申请日：2016-01-25
Applicant: Micron Technology, Inc.
Inventor： Sanh D. Tang , Kamal M. Karda , Wolfgang Mueller , Sourabh Dhir , Robert Kerr , Sangmin Hwang , Haitao Liu
IPC: H01L27/108 , H01L29/06 , H01L23/528
CPC classification number: H01L27/10823 , H01L21/76232 , H01L23/528 , H01L27/10808 , H01L27/10876 , H01L27/10885 , H01L27/10888 , H01L29/0649 , H01L29/0653 , H01L29/66477 , H01L29/66621 , H01L29/78 , H01L2924/0002 , H01L2924/1436 , H01L2924/00
Abstract: An array of recessed access gate lines includes active area regions having dielectric trench isolation material there-between. The trench isolation material comprises dielectric projections extending into opposing ends of individual active area regions under an elevationally outermost surface of material of the active area regions. The active area material is elevationally over the dielectric projections. Recessed access gate lines individually extend transversally across the active area regions and extend between the ends of immediately end-to-end adjacent active area regions within the dielectric trench isolation material. Other arrays are disclosed, as are methods.
Abstract translation: 一组凹进的存取栅极线包括其间具有介电沟槽隔离材料的有源区域区域。 沟槽隔离材料包括延伸到有源区域区域的材料的最外表面下方的各个有源区域的相对端的电介质突起。 有源区域材料在电介质突起上是垂直的。 嵌入式栅极线分别横跨有源区域区域延伸并且在电介质沟槽隔离材料内的紧邻端到端相邻有源区域区域的端部之间延伸。 公开了其他阵列，方法也是如此。
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4.发明申请Arrays Of Recessed Access Gate Lines, Arrays Of Conductive Lines, Arrays Of Recessed Access Gate Lines And Conductive Lines, Memory Circuitry, Methods Of Forming An Array Of Recessed Access Gate Lines, Methods Of Forming An Array Of Conductive Lines, And Methods Of Forming An Array Of Recessed Access Gate Lines And An Array Of Conductive Lines 有权嵌入式入口栅极阵列，导电线阵列，嵌入式栅极线和导电线阵列，存储器电路，形成嵌入式栅极线阵列的方法，形成导电阵列阵列的方法和形成方法 嵌入式门禁线阵列和导线阵列公开(公告)号：US20150028406A1
公开(公告)日：2015-01-29
申请号：US13948746
申请日：2013-07-23
Applicant: Micron Technology, Inc.
Inventor： Sanh D. Tang , Kamal M. Karda , Wolfgang Mueller , Sourabh Dhir , Robert Kerr , Sangmin Hwang , Haitao Liu
IPC: H01L29/423 , H01L29/06 , H01L27/108
CPC classification number: H01L27/10823 , H01L21/76232 , H01L23/528 , H01L27/10808 , H01L27/10876 , H01L29/0649 , H01L29/66621 , H01L2924/0002 , H01L2924/00
Abstract: An array of recessed access gate lines includes active area regions having dielectric trench isolation material there-between. The trench isolation material comprises dielectric projections extending into opposing ends of individual active area regions under an elevationally outermost surface of material of the active area regions. The active area material is elevationally over the dielectric projections. Recessed access gate lines individually extend transversally across the active area regions and extend between the ends of immediately end-to-end adjacent active area regions within the dielectric trench isolation material. Other arrays are disclosed, as are methods.
Abstract translation: 一组凹进的存取栅极线包括其间具有介电沟槽隔离材料的有源区域区域。 沟槽隔离材料包括延伸到有源区域区域的材料的最外表面下方的各个有源区域的相对端的电介质突起。 有源区域材料在电介质突起上是垂直的。 嵌入式栅极线分别横跨有源区域区域延伸并且在电介质沟槽隔离材料内的紧邻端到端相邻有源区域区域的端部之间延伸。 公开了其他阵列，方法也是如此。
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公开(公告)号：US20190051653A1
公开(公告)日：2019-02-14
申请号：US16161381
申请日：2018-10-16
Applicant: Micron Technology, Inc.
Inventor： Sanh D. Tang , Kamal M. Karda , Wolfgang Mueller , Sourabh Dhir , Robert Kerr , Sangmin Hwang , Haitao Liu
IPC: H01L27/108 , H01L29/06 , H01L29/78 , H01L29/66 , H01L21/762 , H01L23/528
Abstract: An array of recessed access gate lines includes active area regions having dielectric trench isolation material there-between. The trench isolation material comprises dielectric projections extending into opposing ends of individual active area regions under an elevationally outermost surface of material of the active area regions. The active area material is elevationally over the dielectric projections. Recessed access gate lines individually extend transversally across the active area regions and extend between the ends of immediately end-to-end adjacent active area regions within the dielectric trench isolation material. Other arrays are disclosed, as are methods.
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6.发明授权Methods of forming an array of conductive lines and methods of forming an array of recessed access gate lines 有权形成导线阵列的方法和形成凹陷入口栅极线阵列的方法公开(公告)号：US09263455B2
公开(公告)日：2016-02-16
申请号：US13948746
申请日：2013-07-23
Applicant: Micron Technology, Inc.
Inventor： Sanh D. Tang , Kamal M. Karda , Wolfgang Mueller , Sourabh Dhir , Robert Kerr , Sangmin Hwang , Haitao Liu
IPC: H01L27/108 , H01L21/762 , H01L29/66
CPC classification number: H01L27/10823 , H01L21/76232 , H01L23/528 , H01L27/10808 , H01L27/10876 , H01L29/0649 , H01L29/66621 , H01L2924/0002 , H01L2924/00
Abstract: An array of recessed access gate lines includes active area regions having dielectric trench isolation material there-between. The trench isolation material comprises dielectric projections extending into opposing ends of individual active area regions under an elevationally outermost surface of material of the active area regions. The active area material is elevationally over the dielectric projections. Recessed access gate lines individually extend transversally across the active area regions and extend between the ends of immediately end-to-end adjacent active area regions within the dielectric trench isolation material. Other arrays are disclosed, as are methods.
Abstract translation: 一组凹进的存取栅极线包括其间具有介电沟槽隔离材料的有源区域区域。 沟槽隔离材料包括延伸到有源区域区域的材料的最外表面下方的各个有源区域的相对端的电介质突起。 有源区域材料在电介质突起上是垂直的。 嵌入式栅极线分别横跨有源区域区域延伸并且在电介质沟槽隔离材料内的紧邻端到端相邻有源区域区域的端部之间延伸。 公开了其他阵列，方法也是如此。
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