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    Memory Cells, Integrated Devices, and Methods of Forming Memory Cells
    1.
    发明申请
    Memory Cells, Integrated Devices, and Methods of Forming Memory Cells 有权
    记忆单元，集成器件和形成存储器单元的方法

    公开(公告)号：US20140206171A1

    公开(公告)日：2014-07-24

    申请号：US14225111

    申请日：2014-03-25

    Applicant: Micron Technology, Inc.

    Inventor： Andrea Redaelli ,  Ugo Russo ,  Agostino Pirovano ,  Simone Lavizzari

    IPC: H01L45/00

    CPC classification number: H01L45/06 ,  G11C13/0004 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/128 ,  H01L45/1286 ,  H01L45/141 ,  H01L45/144 ,  H01L45/16 ,  H01L45/1608 ,  H01L45/165 ,  H01L45/1675

    Abstract: Some embodiments include integrated devices, such as memory cells. The devices may include chalcogenide material, an electrically conductive material over the chalcogenide material, and a thermal sink between the electrically conductive material and the chalcogenide material. The thermal sink may be of a composition that includes an element in common with the electrically conductive material and includes an element in common with the chalcogenide material. Some embodiments include a method of forming a memory cell. Chalcogenide material may be formed over heater material. Electrically conductive material may be formed over the chalcogenide material. A thermal sink may be formed between the electrically conductive material and the chalcogenide material. The thermal sink may be of a composition that includes an element in common with the electrically conductive material and includes an element in common with the chalcogenide material.

    Abstract translation: 一些实施例包括集成设备，诸如存储器单元。 这些装置可以包括硫族化物材料，在硫族化物材料上的导电材料，以及在导电材料和硫族化物材料之间的散热器。 散热器可以是包括与导电材料相同的元件的组合物，并且包括与硫族化物材料相同的元件。 一些实施例包括形成存储器单元的方法。 可以在加热器材料上形成硫族化物材料。 可以在硫族化物材料上形成导电材料。 可以在导电材料和硫族化物材料之间形成散热器。 散热器可以是包括与导电材料相同的元件的组合物，并且包括与硫族化物材料相同的元件。

    Memory cells, integrated devices, and methods of forming memory cells
    2.
    发明授权
    Memory cells, integrated devices, and methods of forming memory cells 有权
    存储单元，集成器件和形成存储单元的方法

    公开(公告)号：US09570677B2

    公开(公告)日：2017-02-14

    申请号：US15049100

    申请日：2016-02-21

    Applicant: Micron Technology, Inc.

    Inventor： Andrea Redaelli ,  Ugo Russo ,  Agostino Pirovano ,  Simone Lavizzari

    IPC: H01L45/00 ,  G11C13/00

    CPC classification number: H01L45/06 ,  G11C13/0004 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/128 ,  H01L45/1286 ,  H01L45/141 ,  H01L45/144 ,  H01L45/16 ,  H01L45/1608 ,  H01L45/165 ,  H01L45/1675

    Abstract: Some embodiments include integrated devices, such as memory cells. The devices may include chalcogenide material, an electrically conductive material over the chalcogenide material, and a thermal sink between the electrically conductive material and the chalcogenide material. The thermal sink may be of a composition that includes an element in common with the electrically conductive material and includes an element in common with the chalcogenide material. Some embodiments include a method of forming a memory cell. Chalcogenide material may be formed over heater material. Electrically conductive material may be formed over the chalcogenide material. A thermal sink may be formed between the electrically conductive material and the chalcogenide material. The thermal sink may be of a composition that includes an element in common with the electrically conductive material and includes an element in common with the chalcogenide material.

    Abstract translation: 一些实施例包括集成设备，诸如存储器单元。 这些装置可以包括硫族化物材料，在硫族化物材料上的导电材料，以及在导电材料和硫族化物材料之间的散热器。 散热器可以是包括与导电材料相同的元件的组合物，并且包括与硫族化物材料相同的元件。 一些实施例包括形成存储器单元的方法。 可以在加热器材料上形成硫族化物材料。 可以在硫族化物材料上形成导电材料。 可以在导电材料和硫族化物材料之间形成散热器。 散热器可以是包括与导电材料相同的元件的组合物，并且包括与硫族化物材料相同的元件。

    Memory cells, integrated devices, and methods of forming memory cells
    4.
    发明授权
    Memory cells, integrated devices, and methods of forming memory cells 有权
    存储单元，集成器件和形成存储单元的方法

    公开(公告)号：US09299930B2

    公开(公告)日：2016-03-29

    申请号：US14225111

    申请日：2014-03-25

    Applicant: Micron Technology, Inc.

    Inventor： Andrea Redaelli ,  Ugo Russo ,  Agostino Pirovano ,  Simone Lavizzari

    IPC: H01L45/00

    CPC classification number: H01L45/06 ,  G11C13/0004 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/128 ,  H01L45/1286 ,  H01L45/141 ,  H01L45/144 ,  H01L45/16 ,  H01L45/1608 ,  H01L45/165 ,  H01L45/1675

    Abstract: Some embodiments include integrated devices, such as memory cells. The devices may include chalcogenide material, an electrically conductive material over the chalcogenide material, and a thermal sink between the electrically conductive material and the chalcogenide material. The thermal sink may be of a composition that includes an element in common with the electrically conductive material and includes an element in common with the chalcogenide material. Some embodiments include a method of forming a memory cell. Chalcogenide material may be formed over heater material. Electrically conductive material may be formed over the chalcogenide material. A thermal sink may be formed between the electrically conductive material and the chalcogenide material. The thermal sink may be of a composition that includes an element in common with the electrically conductive material and includes an element in common with the chalcogenide material.

    Abstract translation: 一些实施例包括集成设备，诸如存储器单元。 这些装置可以包括硫族化物材料，在硫族化物材料上的导电材料，以及在导电材料和硫族化物材料之间的散热器。 散热器可以是包括与导电材料相同的元件的组合物，并且包括与硫族化物材料相同的元件。 一些实施例包括形成存储器单元的方法。 可以在加热器材料上形成硫族化物材料。 可以在硫族化物材料上形成导电材料。 可以在导电材料和硫族化物材料之间形成散热器。 散热器可以是包括与导电材料相同的元件的组合物，并且包括与硫族化物材料相同的元件。

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