METHOD OF PRODUCING SEMICONDUCTOR DEVICE
    1.
    发明公开

    公开(公告)号:US20230387344A1

    公开(公告)日:2023-11-30

    申请号:US18310002

    申请日:2023-05-01

    CPC classification number: H01L33/0095 H01L2933/0066

    Abstract: A method of producing a semiconductor device, the method includes steps of: detecting a defect included in a semiconductor layer; forming a metal film on the semiconductor layer; after forming the metal film on the semiconductor layer, exposing the semiconductor layer through the metal film by removing a portion of the metal film by irradiation with a first laser emitting red or infrared light; and after the step of exposing the semiconductor layer, removing a portion of the semiconductor layer by irradiation with a second laser emitting ultraviolet light, said portion of the semiconductor layer including the defect. A diameter of said portion of the metal film is greater than a diameter of said portion of the semiconductor layer in a plan view. Said portion of the metal film overlaps with said portion of the semiconductor layer in the plan view.

    METHOD OF MANUFACTURING LIGHT EMITTING ELEMENT

    公开(公告)号:US20210005777A1

    公开(公告)日:2021-01-07

    申请号:US16908354

    申请日:2020-06-22

    Abstract: A method of manufacturing light emitting elements includes: providing a wafer including a substrate formed of sapphire and having a first main surface and a second main surface, and a semiconductor layered body disposed on the first main surface of the substrate; irradiating a laser beam into the substrate to form a modified region inside the substrate, the modified region having a crack reaching the first main surface and a crack reaching the second main surface; irradiating CO2 laser to a region of the substrate overlapping with a region to which the laser beam has been irradiated; and cleaving the wafer along the modified region to obtain the light emitting elements each having a hexagonal shape in a plan view.

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