公开(公告)号：US20190035973A1

公开(公告)日：2019-01-31

申请号：US16149898

申请日：2018-10-02

Applicant: NICHIA CORPORATION

Inventor： Hiroki OKAMOTO ,  Hiroaki TAMEMOTO ,  Junya NARITA

IPC: H01L33/00 ,  H01L21/304 ,  H01L21/78 ,  H01L21/683 ,  H01L29/04

CPC classification number: H01L33/0095 ,  H01L21/304 ,  H01L21/6835 ,  H01L21/78 ,  H01L29/04 ,  H01L2221/68327

Abstract: A method for manufacturing a semiconductor element is provided. The method includes providing a semiconductor wafer including a substrate and a semiconductor structure on the substrate, forming a cleavage starting portion in the semiconductor wafer, and dividing the semiconductor wafer into a plurality of semiconductor elements by transferring a pressing member on the semiconductor wafer in a state where the pressing member is pressed against the semiconductor wafer to separate the semiconductor wafer at the cleavage starting portion. The pressing member includes a tip portion to be pressed on the semiconductor wafer, and the tip portion has a spherical surface.

公开(公告)号：US20210005777A1

公开(公告)日：2021-01-07

申请号：US16908354

申请日：2020-06-22

Applicant: NICHIA CORPORATION

Inventor： Naoto INOUE ,  Minoru YAMAMOTO ,  Satoshi OKUMURA ,  Hiroki OKAMOTO ,  Hiroaki TAMEMOTO

IPC: H01L33/00

Abstract: A method of manufacturing light emitting elements includes: providing a wafer including a substrate formed of sapphire and having a first main surface and a second main surface, and a semiconductor layered body disposed on the first main surface of the substrate; irradiating a laser beam into the substrate to form a modified region inside the substrate, the modified region having a crack reaching the first main surface and a crack reaching the second main surface; irradiating CO2 laser to a region of the substrate overlapping with a region to which the laser beam has been irradiated; and cleaving the wafer along the modified region to obtain the light emitting elements each having a hexagonal shape in a plan view.

公开(公告)号：US20170005225A1

公开(公告)日：2017-01-05

申请号：US15196787

申请日：2016-06-29

Applicant: NICHIA CORPORATION

Inventor： Hiroki OKAMOTO ,  Hiroaki TAMEMOTO ,  Junya NARITA

IPC: H01L33/00 ,  H01L33/16 ,  H01L21/683 ,  H01L29/04 ,  H01L21/78 ,  H01L21/304

CPC classification number: H01L33/0095 ,  H01L21/304 ,  H01L21/6835 ,  H01L21/78 ,  H01L29/04 ,  H01L2221/68327

Abstract: A method for manufacturing a semiconductor element is provided. The method includes providing a semiconductor wafer including a substrate and a semiconductor structure on the substrate, forming a cleavage starting portion in the semiconductor wafer, and dividing the semiconductor wafer into a plurality of semiconductor elements by transferring a pressing member on the semiconductor wafer in a state where the pressing member is pressed against the semiconductor wafer to separate the semiconductor wafer at the cleavage starting portion. The pressing member includes a tip portion to be pressed on the semiconductor wafer, and the tip portion has a spherical surface.

Abstract translation: 提供一种半导体元件的制造方法。 该方法包括在衬底上提供包括衬底和半导体结构的半导体晶片，在半导体晶片中形成切割起始部分，并将半导体晶片分成多个半导体元件，通过在半导体晶片上传送加压构件 其中按压构件被压靠在半导体晶片上以在切割起始部分分离半导体晶片。 按压构件包括被压在半导体晶片上的尖端部分，并且尖端部分具有球形表面。