公开(公告)号：US10862524B2

公开(公告)日：2020-12-08

申请号：US16253605

申请日：2019-01-22

Applicant: NXP B.V.

Inventor： Gian Hoogzaad ,  Denizhan Karaca

IPC: H04B1/40 ,  H04B1/48 ,  H03F3/21 ,  H03K17/62 ,  H03K17/76

Abstract: An RF switch for connecting an antenna to a transceiver is described. The RF switch includes a first switchable capacitor arranged between a first terminal and a common terminal and a second switchable capacitor arranged between a second terminal and the common terminal. Each of the first and second switchable capacitors are switchable between a pass state and a blocking state. The capacitance value in the pass state is higher than the capacitance value in the blocking state.

公开(公告)号：US20230115302A1

公开(公告)日：2023-04-13

申请号：US17450179

申请日：2021-10-07

Applicant: NXP B.V.

Inventor： Gijs Jan de Raad ,  Denizhan Karaca

IPC: H01L27/02

Abstract: Field effect transistors in an electronic switching device are provided with electrostatic discharge (ESD) protection elements electrically coupled to a first current terminal of each transistor (e.g., a source of each transistor or a drain of each transistor), allowing the electronic switching device to withstand ESD-induced currents without damage to the switching device.

公开(公告)号：US20190238172A1

公开(公告)日：2019-08-01

申请号：US16253605

申请日：2019-01-22

Applicant: NXP B.V.

Inventor： Gian Hoogzaad ,  Denizhan Karaca

IPC: H04B1/40 ,  H03F3/21 ,  H03K17/62 ,  H03K17/76

CPC classification number: H04B1/40 ,  H03F3/21 ,  H03F2200/451 ,  H03K17/62 ,  H03K17/76 ,  H04B1/48

Abstract: An RF switch for connecting an antenna to a transceiver is described. The RF switch includes a first switchable capacitor arranged between a first terminal and a common terminal and a second switchable capacitor arranged between a second terminal and the common terminal. Each of the first and second switchable capacitors are switchable between a pass state and a blocking state. The capacitance value in the pass state is higher than the capacitance value in the blocking state.

公开(公告)号：US12021076B2

公开(公告)日：2024-06-25

申请号：US17450179

申请日：2021-10-07

Applicant: NXP B.V.

Inventor： Gijs Jan de Raad ,  Denizhan Karaca

IPC: H01L27/02

CPC classification number: H01L27/0266 ,  H01L27/0255

Abstract: Field effect transistors in an electronic switching device are provided with electrostatic discharge (ESD) protection elements electrically coupled to a first current terminal of each transistor (e.g., a source of each transistor or a drain of each transistor), allowing the electronic switching device to withstand ESD-induced currents without damage to the switching device.

公开(公告)号：US20220359318A1

公开(公告)日：2022-11-10

申请号：US17661729

申请日：2022-05-02

Applicant: NXP B.V.

Inventor： Denizhan Karaca ,  Gijs Jan de Raad ,  Marcus van der Vossen ,  Eric Thomas

IPC: H01L21/66 ,  H01L23/60 ,  H01L23/66 ,  H03K17/0812

Abstract: An integrated circuit, IC, comprising one or more DC blocking modules connected to a respective input/output, IO, pin of the IC, each DC blocking module comprising: a capacitor having a first terminal connected to the respective IO pin and a second terminal connected to a node of the circuitry of the IC; and an electrostatic discharge, ESD, protection circuit connected in parallel to the capacitor, the ESD protection circuit comprising: a conduction path connected between the first terminal of the capacitor and the second terminal of the capacitor; and a control terminal configured to receive a control signal to switch the ESD protection circuit between: an operational mode in which the conduction path is in a non-conducting state and provides ESD protection to the capacitor; and a test mode in which the conduction path is in a conducting state and short circuits the capacitor.