RF switch
    1.
    发明授权

    公开(公告)号:US10862524B2

    公开(公告)日:2020-12-08

    申请号:US16253605

    申请日:2019-01-22

    Applicant: NXP B.V.

    Abstract: An RF switch for connecting an antenna to a transceiver is described. The RF switch includes a first switchable capacitor arranged between a first terminal and a common terminal and a second switchable capacitor arranged between a second terminal and the common terminal. Each of the first and second switchable capacitors are switchable between a pass state and a blocking state. The capacitance value in the pass state is higher than the capacitance value in the blocking state.

    TRANSISTOR SWITCHES WITH ELECTROSTATIC DISCHARGE PROTECTION

    公开(公告)号:US20230115302A1

    公开(公告)日:2023-04-13

    申请号:US17450179

    申请日:2021-10-07

    Applicant: NXP B.V.

    Abstract: Field effect transistors in an electronic switching device are provided with electrostatic discharge (ESD) protection elements electrically coupled to a first current terminal of each transistor (e.g., a source of each transistor or a drain of each transistor), allowing the electronic switching device to withstand ESD-induced currents without damage to the switching device.

    RF SWITCH
    3.
    发明申请
    RF SWITCH 审中-公开

    公开(公告)号:US20190238172A1

    公开(公告)日:2019-08-01

    申请号:US16253605

    申请日:2019-01-22

    Applicant: NXP B.V.

    Abstract: An RF switch for connecting an antenna to a transceiver is described. The RF switch includes a first switchable capacitor arranged between a first terminal and a common terminal and a second switchable capacitor arranged between a second terminal and the common terminal. Each of the first and second switchable capacitors are switchable between a pass state and a blocking state. The capacitance value in the pass state is higher than the capacitance value in the blocking state.

    Transistor switches with electrostatic discharge protection

    公开(公告)号:US12021076B2

    公开(公告)日:2024-06-25

    申请号:US17450179

    申请日:2021-10-07

    Applicant: NXP B.V.

    CPC classification number: H01L27/0266 H01L27/0255

    Abstract: Field effect transistors in an electronic switching device are provided with electrostatic discharge (ESD) protection elements electrically coupled to a first current terminal of each transistor (e.g., a source of each transistor or a drain of each transistor), allowing the electronic switching device to withstand ESD-induced currents without damage to the switching device.

    INTEGRATED CIRCUIT
    5.
    发明申请

    公开(公告)号:US20220359318A1

    公开(公告)日:2022-11-10

    申请号:US17661729

    申请日:2022-05-02

    Applicant: NXP B.V.

    Abstract: An integrated circuit, IC, comprising one or more DC blocking modules connected to a respective input/output, IO, pin of the IC, each DC blocking module comprising: a capacitor having a first terminal connected to the respective IO pin and a second terminal connected to a node of the circuitry of the IC; and an electrostatic discharge, ESD, protection circuit connected in parallel to the capacitor, the ESD protection circuit comprising: a conduction path connected between the first terminal of the capacitor and the second terminal of the capacitor; and a control terminal configured to receive a control signal to switch the ESD protection circuit between: an operational mode in which the conduction path is in a non-conducting state and provides ESD protection to the capacitor; and a test mode in which the conduction path is in a conducting state and short circuits the capacitor.

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