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公开(公告)号：US20190238172A1
公开(公告)日：2019-08-01
申请号：US16253605
申请日：2019-01-22
Applicant: NXP B.V.
Inventor： Gian Hoogzaad , Denizhan Karaca
Abstract: An RF switch for connecting an antenna to a transceiver is described. The RF switch includes a first switchable capacitor arranged between a first terminal and a common terminal and a second switchable capacitor arranged between a second terminal and the common terminal. Each of the first and second switchable capacitors are switchable between a pass state and a blocking state. The capacitance value in the pass state is higher than the capacitance value in the blocking state.
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公开(公告)号：US10050588B2
公开(公告)日：2018-08-14
申请号：US15596416
申请日：2017-05-16
Applicant: NXP B.V.
Inventor： Gerben Willem de Jong , Mark Pieter van der Heijden , Jozef Reinerus Maria Bergervoet , Tony Vanhoucke , Gian Hoogzaad , Ivan Matkov Zahariev
Abstract: A Doherty amplifier circuit comprising: a splitter having: a splitter-input-terminal for receiving an input signal; a main-splitter-output-terminal; and a peaking-splitter-output-terminal; a main-power-amplifier having a main-power-input-terminal and a main-power-output-terminal, wherein; the main-power-input-terminal is connected to the main-splitter-output-terminal; and the main-power-output-terminal is configured to provide a main-power-amplifier-output-signal; a peaking-power-amplifier having a peaking-power-input-terminal and a peaking-power-output-terminal, wherein: the peaking-power-input-terminal is connected to the peaking-splitter-output-terminal; and the peaking-power-output-terminal is configured to provide a peaking-power-amplifier-output-signal. The splitter, the main-power-amplifier and the peaking-power-amplifier are provided by means of an integrated circuit.
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公开(公告)号：US20170019075A1
公开(公告)日：2017-01-19
申请号：US15209816
申请日：2016-07-14
Applicant: NXP B.V.
Inventor： Gian Hoogzaad
CPC classification number: H03F1/52 , H03F3/195 , H03F3/45475 , H03F2200/18 , H03F2200/258 , H03F2200/294 , H03F2200/426 , H03F2200/441 , H03F2200/444 , H03F2200/451 , H03F2200/462 , H03F2200/481 , H03F2200/489 , H03F2200/492 , H03F2200/78
Abstract: An RF amplifier comprising an input-transistor having an input-transistor-base terminal, an input-transistor-collector terminal and an input-transistor-emitter terminal; a degeneration-component connected between the input-transistor-emitter terminal and a ground terminal; and a protection-transistor having a protection-transistor-base terminal, a protection-transistor-collector terminal and a protection-transistor-emitter terminal. The input-transistor-base terminal is connected to the protection-transistor-emitter terminal, and the protection-transistor-base terminal is connected to the input-transistor-emitter.
Abstract translation: 一种RF放大器，包括具有输入晶体管基极端子的输入晶体管，输入晶体管集电极端子和输入晶体管 - 发射极端子; 连接在输入 - 晶体管 - 发射极端子和接地端子之间的退化分量; 以及具有保护晶体管基极端子的保护晶体管，保护晶体管集电极端子和保护晶体管 - 发射极端子。 输入晶体管基极端子连接到保护晶体管 - 发射极端子，保护晶体管基极端子连接到输入晶体管 - 发射极。
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公开(公告)号：US11923877B2
公开(公告)日：2024-03-05
申请号：US17660392
申请日：2022-04-22
Applicant: NXP B.V.
Inventor： Gian Hoogzaad , Jozef Reinerus Maria Bergervoet , Alexander Simin
CPC classification number: H04B1/006 , H04B1/163 , H04B1/44 , H04B7/0602
Abstract: An antenna switch circuit and an antenna circuit switching method. The circuit includes an antenna port, a termination port (e.g., for disposal of power reflected back from an antenna and received through the antenna port in a transmit mode), and a receive port (e.g., for receiving a signal from the antenna port via the antenna switch circuit in a receive mode). The circuit also includes a first switch coupled between the antenna port and the termination port. The circuit further includes a resonant inductance coupled between the receive port and the node located between the antenna port and the first switch. The circuit also includes a second switch coupled between a reference potential and a node located between the resonant inductance and the receive port.
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公开(公告)号：US11424721B2
公开(公告)日：2022-08-23
申请号：US17069416
申请日：2020-10-13
Applicant: NXP B.V.
Inventor： Gian Hoogzaad , Guillaume Lebailly , Klaas-Jan de Langen
Abstract: An RF amplifier for implementation in SiGe HBT technology is described. The RF amplifier has a cascode stage comprising a common base (CB) transistor and a common emitter (CE) transistor arranged in series between a first voltage rail and a second voltage rail. An RF input is coupled to the base of the CE transistor and an RF output is coupled to the collector of the CB transistor. The RF amplifier includes a CB power-down circuit arranged between the base of the CB transistor and the second voltage rail and a CE power-down circuit arranged between the base of the CE transistor and the second voltage rail. In a power-down mode the CE power-down circuit couples the base of the common-emitter-transistor to the second voltage rail. The CB power-down mode circuit couples the base of the CB transistor to the second voltage rail via a high-ohmic path.
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Patent Agency Ranking
公开(公告)号：US10862524B2
公开(公告)日：2020-12-08
申请号：US16253605
申请日：2019-01-22
Applicant: NXP B.V.
Inventor： Gian Hoogzaad , Denizhan Karaca
Abstract: An RF switch for connecting an antenna to a transceiver is described. The RF switch includes a first switchable capacitor arranged between a first terminal and a common terminal and a second switchable capacitor arranged between a second terminal and the common terminal. Each of the first and second switchable capacitors are switchable between a pass state and a blocking state. The capacitance value in the pass state is higher than the capacitance value in the blocking state.
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公开(公告)号：US10742195B2
公开(公告)日：2020-08-11
申请号：US16210468
申请日：2018-12-05
Applicant: NXP B.V.
Inventor： Amin Hamidian , Gian Hoogzaad , Ivan Mitkov Zahariev
Abstract: A matching circuit comprising: an input-terminal configured to be connected to an active-circuit; an output-terminal configured to be connected to a downstream component; a current-source configured to provide a disabled-current; one or more diode-modules, each comprising a diode and a biasing-resistor in parallel with each other; and a reactive-matching-component that has a reactive impedance. The current source is configured to pass the disabled-current through the one or more diode-modules and the reactive-matching-component when the matching circuit is in a disabled-mode of operation such that they contribute to the impedance of the matching circuit between the input-terminal and the output-terminal.
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公开(公告)号：US20190068186A1
公开(公告)日：2019-02-28
申请号：US16026129
申请日：2018-07-03
Applicant: NXP B.V.
Inventor： Gian Hoogzaad , Amin Hamidian , Fanfan Meng
IPC: H03K17/22
CPC classification number: H03K17/223 , G06F1/28 , G06F11/3055 , G06F11/3058 , G11C5/148 , G11C7/20 , G11C17/18
Abstract: A power supply ready indicator circuit is described. The power supply ready indicator circuit includes a first power-supply-ready-input interfacing with a first power supply rail; a second power-supply-ready-input interfacing with a second power supply rail; and a power ready indicator output. The power supply ready indicator circuit is configured to divide the voltage on the first power supply rail, and to compare the divided voltage with the second power supply rail voltage. The power supply ready indicator circuit generates a power ready signal on the power ready indicator output in response to the divided voltage value being greater than the second power supply rail voltage value. The final value of the first power supply rail voltage is greater than the final value of the second power supply rail voltage.
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公开(公告)号：US20150318852A1
公开(公告)日：2015-11-05
申请号：US14697860
申请日：2015-04-28
Applicant: NXP B.V.
Inventor： Gian Hoogzaad , Jozef Bergervoet
IPC: H03K17/687
CPC classification number: H03K17/687 , H03K17/063 , H03K17/6874 , H03K17/693 , H03K2017/066 , H03K2217/0054
Abstract: A RF switching arrangement (400) is described including a bias swap circuit (30). The bias swap circuit switches the bias voltage dependent on the state of the RF switch. This improves the performance of the RF switch without requiring charge pump circuitry.
Abstract translation: 描述了RF切换装置（400），其包括偏置交换电路（30）。 偏置交换电路根据RF开关的状态切换偏置电压。 这提高了RF开关的性能，而不需要电荷泵电路。
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公开(公告)号：US20150123732A1
公开(公告)日：2015-05-07
申请号：US14527968
申请日：2014-10-30
Applicant: NXP B.V.
Inventor： Gian Hoogzaad , Alexander Simin , Hasan Gui
CPC classification number: H03F1/26 , H03F1/22 , H03F1/226 , H03F3/191 , H03F3/193 , H03F3/50 , H03F2200/294 , H03F2200/451 , H04W88/08
Abstract: A two-stage RF amplifier is provided. The first stage is a common-emitter transistor arrangement with a purely reactive degeneration impedance and an output impedance with a reactive component matched in frequency response to the degeneration impedance. The second stage is a buffer amplifier. The first amplifier can be designed for high gain which is flat over frequency by virtue of the reactive degeneration impedance. The first amplifier provides input matching, and the buffer provides output matching, with decoupling between the input and output.
Abstract translation: 提供两级RF放大器。 第一级是具有纯反应性退化阻抗的共发射极晶体管布置，并且具有与对退化阻抗的频率响应匹配的无功分量的输出阻抗。 第二级是缓冲放大器。 第一放大器可以设计用于通过反应性退化阻抗在频率上平坦的高增益。 第一个放大器提供输入匹配，并且缓冲器提供输出匹配和输入和输出之间的去耦。
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