-
公开(公告)号：US20160211739A1
公开(公告)日：2016-07-21
申请号：US14597538
申请日：2015-01-15
申请人： NXP B.V.
CPC分类号： H02M3/073 , H02M1/32 , H02M1/36 , H02M3/07 , H03F1/523 , H03F3/185 , H03F3/2173 , H03F2200/03 , H03K2217/0081
摘要： Disclosed is a charge pump protection device including a power supply voltage, a charge pump to produce an output voltage higher than the power supply voltage, the charge pump including, a pumping capacitor to store voltage during a charging state and to discharge the voltage during a pumping state thereof, a plurality of switches to regulate the charging and pumping states, a charge pump capacitor to store the output voltage, and at least one current limiter in series with at least one of the plurality of switches to limit current and prevent an electrical failure of the charge pump.
摘要翻译： 公开了一种包括电源电压的电荷泵保护装置，用于产生高于电源电压的输出电压的电荷泵，电荷泵包括：在充电状态期间存储电压的泵浦电容器，以及在充电状态期间放电 泵送状态，用于调节充电和泵送状态的多个开关，用于存储输出电压的电荷泵电容器，以及与多个开关中的至少一个开关串联的至少一个限流器，以限制电流并防止电气 电荷泵故障。
-
公开(公告)号：US20160197592A1
公开(公告)日：2016-07-07
申请号：US14591087
申请日：2015-01-07
申请人： NXP B.V.
CPC分类号： H01L27/0802 , H01L28/20 , H03F3/2173 , H03M1/0614 , H03M1/12
摘要： Some embodiments include a resistor that may be used in audio conversion for an ADC. The resistor may be made up of an n-well as well as a p-well polysilicons. The n-well and p-well polysilicons may include a shallow trench isolator. The n-well and p-well components may be in series with other n-well or p-well components respectively. Similarly, multiple n-well components which are in series, may be in parallel with multiple p-well components.
摘要翻译： 一些实施例包括可用于ADC的音频转换的电阻器。 电阻器可以由n阱以及p阱多晶硅构成。 n阱和p阱多晶硅可以包括浅沟槽隔离器。 n阱和p阱组分可以分别与其它n阱或p阱组分串联。 类似地，串联的多个n阱组件可以与多个p阱组件并联。
-
公开(公告)号：US11460522B2
公开(公告)日：2022-10-04
申请号：US17032266
申请日：2020-09-25
申请人： NXP B.V.
摘要： A resistive sensor system includes resistive sensor pairs formed of first and second sensors of opposite sensitivity directions to a measured property. Each resistive sensor pair includes one of the first sensors having a first terminal and a second terminal, and one of the second sensors having a third terminal and a fourth terminal. The fourth terminal is coupled to the second terminal of the first sensor. The system further includes multiple noninverting switch elements, each having a noninverting output coupled to the first terminal of one the first sensors, and multiple inverting switch elements, each having an inverting output coupled to the third terminal of one of the second sensors. For each resistive sensor pair, the noninverting and inverting switch elements receive a switch signal for controlling the noninverting and inverting switch elements such that the first and second sensors are biased in opposition to one another.
-
公开(公告)号：US20220099762A1
公开(公告)日：2022-03-31
申请号：US17032266
申请日：2020-09-25
申请人： NXP B.V.
摘要： A resistive sensor system includes resistive sensor pairs formed of first and second sensors of opposite sensitivity directions to a measured property. Each resistive sensor pair includes one of the first sensors having a first terminal and a second terminal, and one of the second sensors having a third terminal and a fourth terminal. The fourth terminal is coupled to the second terminal of the first sensor. The system further includes multiple noninverting switch elements, each having a noninverting output coupled to the first terminal of one the first sensors, and multiple inverting switch elements, each having an inverting output coupled to the third terminal of one of the second sensors. For each resistive sensor pair, the noninverting and inverting switch elements receive a switch signal for controlling the noninverting and inverting switch elements such that the first and second sensors are biased in opposition to one another.
-
公开(公告)号：US09825028B2
公开(公告)日：2017-11-21
申请号：US14591087
申请日：2015-01-07
申请人： NXP B.V.
CPC分类号： H01L27/0802 , H01L28/20 , H03F3/2173 , H03M1/0614 , H03M1/12
摘要： Some embodiments include a resistor that may be used in audio conversion for an ADC. The resistor may be made up of an n-well as well as a p-well polysilicons. The n-well and p-well polysilicons may include a shallow trench isolator. The n-well and p-well components may be in series with other n-well or p-well components respectively. Similarly, multiple n-well components which are in series, may be in parallel with multiple p-well components.
-
公开(公告)号：US09819260B2
公开(公告)日：2017-11-14
申请号：US14597538
申请日：2015-01-15
申请人： NXP B.V.
CPC分类号： H02M3/073 , H02M1/32 , H02M1/36 , H02M3/07 , H03F1/523 , H03F3/185 , H03F3/2173 , H03F2200/03 , H03K2217/0081
摘要： Disclosed is a charge pump protection device including a power supply voltage, a charge pump to produce an output voltage higher than the power supply voltage, the charge pump including, a pumping capacitor to store voltage during a charging state and to discharge the voltage during a pumping state thereof, a plurality of switches to regulate the charging and pumping states, a charge pump capacitor to store the output voltage, and at least one current limiter in series with at least one of the plurality of switches to limit current and prevent an electrical failure of the charge pump.
-
-
-
-
-
搜索结果
6 条记录 (耗时 0.023 秒)
