公开(公告)号：US20150049403A1

公开(公告)日：2015-02-19

申请号：US13968337

申请日：2013-08-15

Applicant: NXP B.V.

Inventor： Gijs de Raad ,  Paul Cappon ,  Albert Jan Huitsing

IPC: H02H9/04

CPC classification number: H02H9/046 ,  H01L27/0285 ,  H03K19/00315

Abstract: Embodiments of an electrostatic discharge (ESD) protection device and a method of operating an ESD protection device are described. In one embodiment, an ESD protection device for an integrated circuit (IC) device includes a bigFET configured to conduct an ESD current during an ESD event and a trigger device configured to trigger the bigFET during the ESD event. The trigger device includes a slew rate detector configured to detect the ESD event, a driver stage configured to drive the bigFET, and a keep-on latch configured to keep the driver stage turned on to drive a gate terminal of the bigFET with a driving voltage that is insensitive to a pre-bias on a drain terminal or a source terminal of the bigFET. Other embodiments are also described.

Abstract translation: 描述了静电放电（ESD）保护装置的实施例和操作ESD保护装置的方法。 在一个实施例中，用于集成电路（IC）装置的ESD保护装置包括被配置为在ESD事件期间传导ESD电流的大FET，以及被配置为在ESD事件期间触发大电容器的触发装置。 触发装置包括被配置为检测ESD事件的转换速率检测器，被配置为驱动大FET的驱动器级以及保持驱动级接通以将驱动级导通以驱动大FET的栅极端的驱动电压的保持锁存器 这对于bigFET的漏极端子或源极端子的预偏置不敏感。 还描述了其它实施例。

公开(公告)号：US09153958B2

公开(公告)日：2015-10-06

申请号：US13968337

申请日：2013-08-15

Applicant: NXP B.V.

Inventor： Gijs de Raad ,  Paul Cappon ,  Albert Jan Huitsing

IPC: H02H9/00 ,  H02H9/04 ,  H01L27/02 ,  H03K19/003

CPC classification number: H02H9/046 ,  H01L27/0285 ,  H03K19/00315

Abstract: Embodiments of an electrostatic discharge (ESD) protection device and a method of operating an ESD protection device are described. In one embodiment, an ESD protection device for an integrated circuit (IC) device includes a bigFET configured to conduct an ESD current during an ESD event and a trigger device configured to trigger the bigFET during the ESD event. The trigger device includes a slew rate detector configured to detect the ESD event, a driver stage configured to drive the bigFET, and a keep-on latch configured to keep the driver stage turned on to drive a gate terminal of the bigFET with a driving voltage that is insensitive to a pre-bias on a drain terminal or a source terminal of the bigFET. Other embodiments are also described.

Abstract translation: 描述了静电放电（ESD）保护装置的实施例和操作ESD保护装置的方法。 在一个实施例中，用于集成电路（IC）装置的ESD保护装置包括被配置为在ESD事件期间传导ESD电流的大FET，以及被配置为在ESD事件期间触发大电容器的触发装置。 触发装置包括被配置为检测ESD事件的转换速率检测器，被配置为驱动大FET的驱动器级以及保持驱动级接通以将驱动级导通以驱动大FET的栅极端的驱动电压的保持锁存器 这对于bigFET的漏极端子或源极端子的预偏置不敏感。 还描述了其它实施例。