公开(公告)号：US20150049403A1

公开(公告)日：2015-02-19

申请号：US13968337

申请日：2013-08-15

Applicant: NXP B.V.

Inventor： Gijs de Raad ,  Paul Cappon ,  Albert Jan Huitsing

IPC: H02H9/04

CPC classification number: H02H9/046 ,  H01L27/0285 ,  H03K19/00315

Abstract: Embodiments of an electrostatic discharge (ESD) protection device and a method of operating an ESD protection device are described. In one embodiment, an ESD protection device for an integrated circuit (IC) device includes a bigFET configured to conduct an ESD current during an ESD event and a trigger device configured to trigger the bigFET during the ESD event. The trigger device includes a slew rate detector configured to detect the ESD event, a driver stage configured to drive the bigFET, and a keep-on latch configured to keep the driver stage turned on to drive a gate terminal of the bigFET with a driving voltage that is insensitive to a pre-bias on a drain terminal or a source terminal of the bigFET. Other embodiments are also described.

Abstract translation: 描述了静电放电（ESD）保护装置的实施例和操作ESD保护装置的方法。 在一个实施例中，用于集成电路（IC）装置的ESD保护装置包括被配置为在ESD事件期间传导ESD电流的大FET，以及被配置为在ESD事件期间触发大电容器的触发装置。 触发装置包括被配置为检测ESD事件的转换速率检测器，被配置为驱动大FET的驱动器级以及保持驱动级接通以将驱动级导通以驱动大FET的栅极端的驱动电压的保持锁存器 这对于bigFET的漏极端子或源极端子的预偏置不敏感。 还描述了其它实施例。

公开(公告)号：US20180287376A1

公开(公告)日：2018-10-04

申请号：US15476276

申请日：2017-03-31

Applicant: NXP B.V.

Inventor： Gijs de Raad

IPC: H02H9/04 ,  H01L27/02 ,  H01L27/06 ,  H01L49/02

CPC classification number: H02H9/04 ,  H01L27/0248 ,  H01L27/027 ,  H01L27/0285 ,  H01L27/0629 ,  H01L28/20 ,  H01L28/40 ,  H02H9/046 ,  H03K19/00315

Abstract: Embodiments of an electrostatic discharge (ESD) protection device and a method of operating an ESD protection device are described. In one embodiment, an ESD protection device includes an NMOS transistor configured to shunt current in response to an ESD pulse and a bigFET connected in parallel with the NMOS transistor. The NMOS transistor includes a source terminal, a gate terminal, and a body. The gate terminal and the body of the NMOS transistor are connected to the source terminal via a resistor. Other embodiments are also described.

公开(公告)号：US09153958B2

公开(公告)日：2015-10-06

申请号：US13968337

申请日：2013-08-15

Applicant: NXP B.V.

Inventor： Gijs de Raad ,  Paul Cappon ,  Albert Jan Huitsing

IPC: H02H9/00 ,  H02H9/04 ,  H01L27/02 ,  H03K19/003

CPC classification number: H02H9/046 ,  H01L27/0285 ,  H03K19/00315

Abstract: Embodiments of an electrostatic discharge (ESD) protection device and a method of operating an ESD protection device are described. In one embodiment, an ESD protection device for an integrated circuit (IC) device includes a bigFET configured to conduct an ESD current during an ESD event and a trigger device configured to trigger the bigFET during the ESD event. The trigger device includes a slew rate detector configured to detect the ESD event, a driver stage configured to drive the bigFET, and a keep-on latch configured to keep the driver stage turned on to drive a gate terminal of the bigFET with a driving voltage that is insensitive to a pre-bias on a drain terminal or a source terminal of the bigFET. Other embodiments are also described.

Abstract translation: 描述了静电放电（ESD）保护装置的实施例和操作ESD保护装置的方法。 在一个实施例中，用于集成电路（IC）装置的ESD保护装置包括被配置为在ESD事件期间传导ESD电流的大FET，以及被配置为在ESD事件期间触发大电容器的触发装置。 触发装置包括被配置为检测ESD事件的转换速率检测器，被配置为驱动大FET的驱动器级以及保持驱动级接通以将驱动级导通以驱动大FET的栅极端的驱动电压的保持锁存器 这对于bigFET的漏极端子或源极端子的预偏置不敏感。 还描述了其它实施例。

公开(公告)号：US10367349B2

公开(公告)日：2019-07-30

申请号：US15476276

申请日：2017-03-31

Applicant: NXP B.V.

Inventor： Gijs de Raad

IPC: H02H9/04 ,  H01L27/02 ,  H03K19/003 ,  H01L27/06 ,  H01L49/02

Abstract: Embodiments of an electrostatic discharge (ESD) protection device and a method of operating an ESD protection device are described. In one embodiment, an ESD protection device includes an NMOS transistor configured to shunt current in response to an ESD pulse and a bigFET connected in parallel with the NMOS transistor. The NMOS transistor includes a source terminal, a gate terminal, and a body. The gate terminal and the body of the NMOS transistor are connected to the source terminal via a resistor. Other embodiments are also described.

公开(公告)号：US09331067B2

公开(公告)日：2016-05-03

申请号：US14025689

申请日：2013-09-12

Applicant: NXP B.V.

Inventor： Gijs de Raad

IPC: H01L27/02 ,  H01L29/78

CPC classification number: H01L27/0274 ,  H01L27/0277 ,  H01L29/78

Abstract: Embodiments of an electrostatic discharge (ESD) protection device and a method of operating an ESD protection device are described. In one embodiment, an ESD protection device includes a bigFET configured to conduct an ESD pulse during an ESD event. The bigFET includes a backgate terminal, a source terminal, and a current distributor connected to the backgate terminal and the source terminal and configured to homogeneously activate a parasitic bipolar junction transistor of the bigFET in response to a current that is generated in the bigFET during the ESD pulse. Other embodiments are also described.

Abstract translation: 描述了静电放电（ESD）保护装置的实施例和操作ESD保护装置的方法。 在一个实施例中，ESD保护器件包括被配置为在ESD事件期间导通ESD脉冲的大电容。 bigFET包括背栅极端子，源极端子和连接到背栅极端子和源极端子的电流分配器，并且被配置为响应于在该FET内产生的电流而均匀激活该大电容器的寄生双极结型晶体管 ESD脉冲。 还描述了其它实施例。

公开(公告)号：US20150070804A1

公开(公告)日：2015-03-12

申请号：US14025689

申请日：2013-09-12

Applicant: NXP B.V.

Inventor： Gijs de Raad

IPC: H01L27/02

CPC classification number: H01L27/0274 ,  H01L27/0277 ,  H01L29/78

Abstract: Embodiments of an electrostatic discharge (ESD) protection device and a method of operating an ESD protection device are described. In one embodiment, an ESD protection device includes a bigFET configured to conduct an ESD pulse during an ESD event. The bigFET includes a backgate terminal, a source terminal, and a current distributor connected to the backgate terminal and the source terminal and configured to homogeneously activate a parasitic bipolar junction transistor of the bigFET in response to a current that is generated in the bigFET during the ESD pulse. Other embodiments are also described.

Abstract translation: 描述了静电放电（ESD）保护装置的实施例和操作ESD保护装置的方法。 在一个实施例中，ESD保护器件包括被配置为在ESD事件期间导通ESD脉冲的大电容。 bigFET包括背栅极端子，源极端子和连接到背栅极端子和源极端子的电流分配器，并且被配置为响应于在该FET内产生的电流而均匀激活该大电容器的寄生双极结型晶体管 ESD脉冲。 还描述了其它实施例。