公开(公告)号：US20240055314A1

公开(公告)日：2024-02-15

申请号：US17818607

申请日：2022-08-09

Applicant: NXP B.V.

Inventor： Ljubo Radic ,  Richard Emil Sweeney ,  Vikas Shilimkar ,  Bernhard Grote ,  Darrell Glenn Hill ,  Ibrahim Khalil

IPC: H01L23/367 ,  H01L29/20 ,  H01L29/778

CPC classification number: H01L23/367 ,  H01L29/2003 ,  H01L29/7786

Abstract: A transistor formed in a semiconductor substrate is provided with a cooling trench. The cooling trench is elongated and extends laterally from a first end of an elongated gate electrode disposed above a channel region of the transistor to a second end of the gate electrode in a first direction that is parallel to a top surface of the semiconductor substrate. The cooling trench is coupled to the first current terminal and extends laterally from a first end to a second end of the first elongated cooling trench along the first direction and extends vertically from the first current terminal and through the top surface into the semiconductor substrate. The cooling trench is filled throughout with a thermally-conductive material configured to dissipate heat from the channel region into the semiconductor substrate.

公开(公告)号：US11476209B2

公开(公告)日：2022-10-18

申请号：US16746371

申请日：2020-01-17

Applicant: NXP B.V.

Inventor： Vikas Shilimkar ,  Kevin Kim ,  Richard Emil Sweeney ,  Eric Matthew Johnson

IPC: H01L23/66 ,  H01L23/13 ,  H01L23/495 ,  H01L23/552 ,  H01L23/00 ,  H01L25/16 ,  H03F1/56 ,  H03F3/193

Abstract: Various embodiments relate to a packaged radio frequency (RF) amplifier device implementing a split bondwire where the direct ground connection of an output capacitor is replaced with a set of bondwires connecting to ground in a direction opposite to the wires connecting to the output of a transistor to an output pad. This is done in order to reduce the effects of mutual inductance between the various bondwires associated with the output of the RF amplifier device.