公开(公告)号：US20060107889A1

公开(公告)日：2006-05-25

申请号：US11131333

申请日：2005-05-18

申请人： Norihito Fukatsu ,  Kazuyuki Egashira ,  Senrin Fu

发明人： Norihito Fukatsu ,  Kazuyuki Egashira ,  Senrin Fu

IPC分类号： C30B15/00 ,  C30B21/06 ,  C30B27/02 ,  C30B28/10 ,  C30B30/04

CPC分类号： C30B29/06 ,  C30B15/00 ,  C30B15/305 ,  Y10S117/917

摘要： The invention provides an apparatus for producing a single crystal, and a method for producing a silicon single crystal using the same. An apparatus for producing a single crystal includes a heating device which heats polycrystalline silicon raw material held in a crucible to form silicon melt, and a pulling up device which grows a silicon single crystal while pulling it up from the silicon melt accompanied with rotation. By providing the apparatus with a magnetic field generation unit which applies to the silicon melt a cusp magnetic field a shape of neutral plane of which is symmetric around the rotation axis of the silicon single crystal and is curved in the upward direction, various conditions for producing a silicon single crystal having a defect free region is relaxed, and a silicon single crystal having a defect free region is produced at high efficiency.

摘要翻译： 本发明提供一种用于制造单晶的装置，以及使用该单晶的硅单晶的制造方法。 单晶体的制造装置包括加热保持在坩埚中的多晶硅原料以形成硅熔体的加热装置，以及伴随旋转从硅熔体中拉出硅单晶的提拉装置。 通过向该装置提供磁场产生单元，该磁场产生单元向硅熔体施加尖角磁场，其中性平面的形状围绕单晶的旋转轴对称并且在向上方向上弯曲，生成的各种条件 具有无缺陷区域的硅单晶被松弛，并且以高效率产生具有无缺陷区域的硅单晶。

公开(公告)号：US07780783B2

公开(公告)日：2010-08-24

申请号：US11907046

申请日：2007-10-09

申请人： Norihito Fukatsu ,  Kazuyuki Egashira ,  Senrin Fu

发明人： Norihito Fukatsu ,  Kazuyuki Egashira ,  Senrin Fu

IPC分类号： C30B15/00 ,  C30B21/06

CPC分类号： C30B29/06 ,  C30B15/00 ,  C30B15/305 ,  Y10S117/917

摘要： The invention provides an apparatus for producing a single crystal, and a method for producing a silicon single crystal using the same. An apparatus for producing a single crystal includes a heating device which heats polycrystalline silicon raw material held in a crucible to form silicon melt, and a pulling up device which grows a silicon single crystal while pulling it up from the silicon melt accompanied with rotation. By providing the apparatus with a magnetic field generation unit which applies to the silicon melt a cusp magnetic field a shape of neutral plane of which is symmetric around the rotation axis of the silicon single crystal and is curved in the upward direction, various conditions for producing a silicon single crystal having a defect free region is relaxed, and a silicon single crystal having a defect free region is produced at high efficiency.

摘要翻译： 本发明提供一种用于制造单晶的装置，以及使用该单晶的硅单晶的制造方法。 单晶体的制造装置包括加热保持在坩埚中的多晶硅原料以形成硅熔体的加热装置，以及伴随旋转从硅熔体中拉出硅单晶的提拉装置。 通过向该装置提供磁场产生单元，该磁场产生单元向硅熔体施加尖角磁场，其中性平面的形状围绕单晶的旋转轴对称并且在向上方向上弯曲，生成的各种条件 具有无缺陷区域的硅单晶被松弛，并且以高效率产生具有无缺陷区域的硅单晶。

公开(公告)号：US07300518B2

公开(公告)日：2007-11-27

申请号：US11131333

申请日：2005-05-18

申请人： Norihito Fukatsu ,  Kazuyuki Egashira ,  Senrin Fu

发明人： Norihito Fukatsu ,  Kazuyuki Egashira ,  Senrin Fu

IPC分类号： C30B15/20 ,  C30B35/00

CPC分类号： C30B29/06 ,  C30B15/00 ,  C30B15/305 ,  Y10S117/917

摘要： The invention provides an apparatus for producing a single crystal, and a method for producing a silicon single crystal using the same. An apparatus for producing a single crystal includes a heating device which heats polycrystalline silicon raw material held in a crucible to form silicon melt, and a pulling up device which grows a silicon single crystal while pulling it up from the silicon melt accompanied with rotation. By providing the apparatus with a magnetic field generation unit which applies to the silicon melt a cusp magnetic field a shape of neutral plane of which is symmetric around the rotation axis of the silicon single crystal and is curved in the upward direction, various conditions for producing a silicon single crystal having a defect free region is relaxed, and a silicon single crystal having a defect free region is produced at high efficiency.

摘要翻译： 本发明提供一种用于制造单晶的装置，以及使用该单晶的硅单晶的制造方法。 单晶体的制造装置包括加热保持在坩埚中的多晶硅原料以形成硅熔体的加热装置，以及伴随旋转从硅熔体中拉出硅单晶的提拉装置。 通过向该装置提供磁场产生单元，该磁场产生单元向硅熔体施加尖角磁场，其中性平面的形状围绕单晶的旋转轴对称并且在向上方向上弯曲，生成的各种条件 具有无缺陷区域的硅单晶被松弛，并且以高效率产生具有无缺陷区域的硅单晶。

公开(公告)号：US20080038179A1

公开(公告)日：2008-02-14

申请号：US11907046

申请日：2007-10-09

申请人： Norihito Fukatsu ,  Kazuyuki Egashira ,  Senrin Fu

发明人： Norihito Fukatsu ,  Kazuyuki Egashira ,  Senrin Fu

IPC分类号： C30B15/30

CPC分类号： C30B29/06 ,  C30B15/00 ,  C30B15/305 ,  Y10S117/917

摘要： The invention provides an apparatus for producing a single crystal, and a method for producing a silicon single crystal using the same. An apparatus for producing a single crystal includes a heating device which heats polycrystalline silicon raw material held in a crucible to form silicon melt, and a pulling up device which grows a silicon single crystal while pulling it up from the silicon melt accompanied with rotation. By providing the apparatus with a magnetic field generation unit which applies to the silicon melt a cusp magnetic field a shape of neutral plane of which is symmetric around the rotation axis of the silicon single crystal and is curved in the upward direction, various conditions for producing a silicon single crystal having a defect free region is relaxed, and a silicon single crystal having a defect free region is produced at high efficiency.

摘要翻译： 本发明提供一种用于制造单晶的装置，以及使用该单晶的硅单晶的制造方法。 单晶体的制造装置包括加热保持在坩埚中的多晶硅原料以形成硅熔体的加热装置，以及伴随旋转从硅熔体中拉出硅单晶的提拉装置。 通过向该装置提供磁场产生单元，该磁场产生单元向硅熔体施加尖角磁场，其中性平面的形状围绕单晶的旋转轴对称并且在向上方向上弯曲，生成的各种条件 具有无缺陷区域的硅单晶被松弛，并且以高效率产生具有无缺陷区域的硅单晶。

公开(公告)号：US20070119365A1

公开(公告)日：2007-05-31

申请号：US10561820

申请日：2005-01-25

申请人： Kazuhiro Harada ,  Norihito Fukatsu ,  Senlin Fu ,  Yoji Suzuki

发明人： Kazuhiro Harada ,  Norihito Fukatsu ,  Senlin Fu ,  Yoji Suzuki

IPC分类号： C30B15/00 ,  C30B21/06 ,  C30B19/00 ,  C30B28/10

CPC分类号： C30B15/14 ,  C30B15/305 ,  C30B29/06 ,  C30B35/00 ,  Y10S117/917 ,  Y10T117/1068 ,  Y10T117/1072

摘要： [Problem] A silicon single crystal ingot in which point defect agglomerates do not exist over a substantially entire length thereof is manufactured without reducing a pure margin. [Solving Means] A heat shielding member 36 comprises a bulge portion 41 which is provided to bulge in an in-cylinder direction at a lower portion of a cylindrical portion 37 and has a heat storage member 47 provided therein. A flow quantity of an inert gas flowing down between the bulge portion 41 in the heat shielding member 36 and an ingot 25 when pulling up a top-side ingot 25a of the silicon single crystal ingot 25 is set larger than a flow quantity of the inert gas flowing down between the bulge portion 41 and the ingot 25 when pulling up a bottom-side ingot 25b of the silicon single crystal ingot 25, thereby pulling up the ingot 25. Alternatively, an intensity of a cusp magnetic field 53 when pulling up the top-side ingot 25a is set higher than an intensity of the cusp magnetic field 53 when pulling up the bottom-side ingot 25b.

公开(公告)号：US07282095B2

公开(公告)日：2007-10-16

申请号：US10561820

申请日：2005-01-25

申请人： Kazuhiro Harada ,  Norihito Fukatsu ,  Senlin Fu ,  Yoji Suzuki

发明人： Kazuhiro Harada ,  Norihito Fukatsu ,  Senlin Fu ,  Yoji Suzuki

IPC分类号： C30B15/20

CPC分类号： C30B15/14 ,  C30B15/305 ,  C30B29/06 ,  C30B35/00 ,  Y10S117/917 ,  Y10T117/1068 ,  Y10T117/1072

摘要： [Problem] A silicon single crystal ingot in which point defect agglomerates do not exist over a substantially entire length thereof is manufactured without reducing a pure margin.[Solving Means] A heat shielding member 36 comprises a bulge portion 41 which is provided to bulge in an in-cylinder direction at a lower portion of a cylindrical portion 37 and has a heat storage member 47 provided therein. A flow quantity of an inert gas flowing down between the bulge portion 41 in the heat shielding member 36 and an ingot 25 when pulling up a top-side ingot 25a of the silicon single crystal ingot 25 is set larger than a flow quantity of the inert gas flowing down between the bulge portion 41 and the ingot 25 when pulling up a bottom-side ingot 25b of the silicon single crystal ingot 25, thereby pulling up the ingot 25. Alternatively, an intensity of a cusp magnetic field 53 when pulling up the top-side ingot 25a is set higher than an intensity of the cusp magnetic field 53 when pulling up the bottom-side ingot 25b.

摘要翻译： [问题]制造在其基本上整个长度上不存在点缺陷聚集体的硅单晶锭，而不会减少纯净余量。 遮蔽构件36包括凸出部分41，该凸起部分41设置成在圆柱形部分37的下部处沿缸内方向凸起并且具有设置在其中的储热构件47。 在将硅单晶锭25的顶侧铸锭25a拉起时，在隔热部件36的隆起部41与锭体25之间向下流动的惰性气体的流量被设定为大于 当拉起硅单晶锭25的底侧晶锭25b时，惰性气体在凸起部41和锭25之间向下流动，从而拉出铸块25。 或者，当拉起顶侧晶锭25a时，尖端磁场53的强度被设定为高于尖端磁场53的强度时，拉动底侧晶锭25b。

公开(公告)号：US5993732A

公开(公告)日：1999-11-30

申请号：US114254

申请日：1998-07-13

申请人： Ryoji Nakayama ,  Yoshinari Ishii ,  Norihito Fukatsu ,  Koichiro Morimoto

发明人： Ryoji Nakayama ,  Yoshinari Ishii ,  Norihito Fukatsu ,  Koichiro Morimoto

IPC分类号： B22F1/00 ,  B22F3/00 ,  B22F9/02 ,  C22C38/00 ,  H01F1/057 ,  H01F1/06 ,  B22F3/12 ,  B22F3/14

CPC分类号： B22F9/023 ,  H01F1/0573 ,  B22F2998/00 ,  B22F2999/00

摘要： An R--T--M alloy material, wherein R is at least one rare earth metal including Y, T is Fe or an Fe component partially replaced by Co or Ni, M is B or a B component partially replaced by C as primary components is prepared by heating the alloy at a temperature from room temperature to a specific temperature of less than 500.degree. C. in a non-oxidizing atmosphere and holding it at the given temperature, if necessary; performing hydrogenation by holding the alloy in a hydrogen atmosphere or a mixed gas atmosphere of hydrogen and an inert gas at a specific temperature in the range of 500-1,000.degree. C.; medial annealing the alloy by holding the R--T--M alloy after the hydrogenation step in an inert gas atmosphere at a specific temperature in the range of 500-1,000.degree. C.; and dehydrogenating the alloy by holding the alloy in a vacuum of less than 1 Torr for dehydrogenation, and then cooling the alloy.

摘要翻译： 一种RTM合金材料，其中R是至少一种包括Y的稀土金属，T是Fe或部分被Co或Ni替代的Fe成分，M是B，或者部分被C作为主要成分的B成分加热 合金，在非氧化性气氛中，在室温至特定温度低于500℃的温度下，必要时将其保持在给定温度; 通过在500〜1000℃的特定温度下，在氢气氛或氢气和惰性气体的混合气体气氛中保持合金进行氢化。 在惰性气体气氛中，在500-1000℃的特定温度下，通过在氢化步骤之后保持R-T-M合金，对合金进行内侧退火。 并通过在低于1Torr的真空中保持合金进行脱氢来脱氢合金，然后冷却合金。