Abstract:
Disclosed is an etching solution for a silicon substrate. More specifically, an etching solution for a silicon substrate is disclosed in which a concentration of a silane compound (silicon) in the etching solution for the silicon substrate is adjusted to improve an etching selectivity of a silicon nitride film relative to a silicon oxide film during etching of the nitride film.
Abstract:
The present invention relates to a negative electrode for a secondary battery and a method for manufacturing the negative electrode, and more particularly, to a negative electrode for a secondary battery which exhibits excellent charge/discharge characteristics and lifespan characteristics by including a carbon-silicon composite and graphite at a predetermined particle size ratio.