公开(公告)号：US10663837B2

公开(公告)日：2020-05-26

申请号：US15902864

申请日：2018-02-22

Applicant: OSRAM OLED GmbH

Inventor： Mikko Peraelae ,  Desiree Queren ,  Marco Antretter

IPC: G03B15/05 ,  H04N5/235 ,  G01S17/88 ,  H04N13/254 ,  H04N13/25 ,  G01C3/08 ,  G01S17/42 ,  H04N9/04 ,  G03B15/03 ,  G01S17/08 ,  G01S17/10

Abstract: In an embodiment a method includes illuminating a scene in a first illumination by identically driving the emitters of a light source such that first exposures and/or first colour values of segments are ascertained by an image sensor, determining first illumination parameters for the segments of the scene, wherein the first illumination parameters are determined based on the first exposures and/or the first colour values, illuminating the scene in a second subsequent illumination by differently driving the emitters based on the first illumination parameters of the segments such that second exposures and/or second colour values of the segments are ascertained by the image sensor, determining second illumination parameters for the segments of the scene, wherein the second illumination parameters are determined based on the second exposures and/or the second colour values and illuminating the scene in a third subsequent illumination by differently driving the emitters based on the second illumination parameters of the segments.

公开(公告)号：US11538964B2

公开(公告)日：2022-12-27

申请号：US16756846

申请日：2018-10-16

Applicant: Osram OLED GmbH

Inventor： David O'Brien ,  Desiree Queren ,  David Racz ,  Britta Goeoetz ,  Michael Schumann

IPC: H01L33/50 ,  H01L27/15 ,  H01L33/38 ,  H01L33/46

Abstract: An optoelectronic semiconductor chip may include an active region configured to emit electromagnetic radiation during operation of said optoelectronic semiconductor chip. The optoelectronic semiconductor chip comprises conversion elements arranged to convert the wavelength of the electromagnetic radiation emitted by the active region during operation, and at least one barrier at least partially impermeable to the electromagnetic radiation emitted by the active region. The barrier is disposed in a lateral direction between the conversion elements, the lateral direction being parallel to the main extension plane of the semiconductor body, and the barrier extending transversely to the lateral direction. The active region has at least two emission regions which can be driven separately from each other, and each of the conversion elements is disposed in a radiation direction of the electromagnetic radiation emitted from one of the emission regions. A method for manufacturing an optoelectronic semiconductor chip is also disclosed.

公开(公告)号：US20200243728A1

公开(公告)日：2020-07-30

申请号：US16756846

申请日：2018-10-16

Applicant: Osram OLED GmbH

Inventor： David O'Brien ,  Desiree Queren ,  David Racz ,  Britta Goeoetz ,  Michael Schumann

IPC: H01L33/50 ,  H01L33/38 ,  H01L27/15 ,  H01L33/46

Abstract: An optoelectronic semiconductor chip may include an active region configured to emit electromagnetic radiation during operation of said optoelectronic semiconductor chip. The optoelectronic semiconductor chip comprises conversion elements arranged to convert the wavelength of the electromagnetic radiation emitted by the active region during operation, and at least one barrier at least partially impermeable to the electromagnetic radiation emitted by the active region. The barrier is disposed in a lateral direction between the conversion elements, the lateral direction being parallel to the main extension plane of the semiconductor body, and the barrier extending transversely to the lateral direction. The active region has at least two emission regions which can be driven separately from each other, and each of the conversion elements is disposed in a radiation direction of the electromagnetic radiation emitted from one of the emission regions. A method for manufacturing an optoelectronic semiconductor chip is also disclosed.

公开(公告)号：US11444224B2

公开(公告)日：2022-09-13

申请号：US16964608

申请日：2019-01-25

Applicant: Osram OLED GmbH

Inventor： Ulrich Streppel ,  Hailing Cui ,  Desiree Queren ,  Dajana Durach

IPC: H01L33/50 ,  H01L25/075 ,  H01L33/60

Abstract: A light-emitting semiconductor component may include a conversion layer, a radiation surface, and a plurality of adjacently arranged emission regions configured to be operated separately, individually and/or in groups. The conversion layer may be arranged downstream of the emission regions in the direction of radiation of the emission regions. The emission regions may be configured to emit primary radiation of a first wavelength range into the conversion layer. The conversion layer may be configured to convert at least a portion of the primary radiation into secondary radiation of a second wavelength range. Mixed radiation is configured to be emitted from the light-emitting semiconductor component at the radiation surface. The mixed radiation may include primary radiation and secondary radiation. A probability that primary radiation travelling from the emission region to the radiation surface is converted into secondary radiation may vary along the radiation surface by a maximum factor of 2.