公开(公告)号：US20210123772A1

公开(公告)日：2021-04-29

申请号：US16662137

申请日：2019-10-24

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Zeljko PAJKIC ,  Markus BOSS ,  Thomas KIPPES

IPC: G01D5/14 ,  H01S5/022 ,  H05K9/00 ,  H01L25/16 ,  H01L23/552 ,  H01L31/0203 ,  H01L31/0232

Abstract: An optoelectronic device comprises a substrate, an optoelectronic element mounted on the substrate, a shielding cap providing electromagnetic shielding, at least one optical element attached to the shielding cap, and a detection element configured to detect if the shielding cap is mounted on the substrate.

公开(公告)号：US20180301873A1

公开(公告)日：2018-10-18

申请号：US15765997

申请日：2016-09-29

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Frank SINGER ,  Norwin VON MALM ,  Tilman RUEGHEIMER ,  Thomas KIPPES

IPC: H01S5/227 ,  H01S5/022 ,  H01S5/042 ,  H01S5/02

CPC classification number: H01S5/227 ,  H01L21/568 ,  H01L24/19 ,  H01L2224/04105 ,  H01L2924/18162 ,  H01S5/0201 ,  H01S5/02228 ,  H01S5/0224 ,  H01S5/02461 ,  H01S5/02469 ,  H01S5/0422 ,  H01S5/0425 ,  H01S5/22 ,  H01S5/32341 ,  H01S2301/176

Abstract: In one embodiment of the invention, the semiconductor laser (1) comprises a semiconductor layer sequence (2). The semiconductor layer sequence (2) contains an n-type region (23), a p-type region (21) and an active zone (22) lying between the two. A laser beam is produced in a resonator path (3). The resonator path (3) is aligned parallel to the active zone (22). In addition, the semiconductor laser (1) contains an electrical p-contact (41) and an electrical n-contact (43) each of which is located on the associated region (21, 23) of the semiconductor layer sequence (2) and is configured to input current directly into the associated region (21, 23). The n-contact (43) extends from the p-type region (21) through the active zone (22) and into the n-type region (23) and is located, when viewed from above, next to the resonator path (3).

公开(公告)号：US20180301866A1

公开(公告)日：2018-10-18

申请号：US15765706

申请日：2016-09-29

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Frank SINGER ,  Norwin VON MALM ,  Tilman RUEGHEIMER ,  Thomas KIPPES

IPC: H01S5/022 ,  H01S5/042 ,  H01S5/22 ,  H01S5/40 ,  H01S5/024 ,  H01S5/343

Abstract: In one embodiment of the invention, the semiconductor laser (1) comprises a semiconductor layer sequence (2). The semiconductor layer sequence (2) contains an n-type region (23), a p-type region (21) and an active zone (22) lying between the two. A laser beam is produced in a resonator path (3). The resonator path (3) is aligned parallel to the active zone (22). In addition, the semiconductor laser (1) contains an electrical p-contact (41) and an electrical n-contact (43) each of which is located on the associated region (21, 23) of the semiconductor layer sequence (2) and is configured to input current directly into the associated region (21, 23). A p-contact surface (61) is electrically connected to the p-contact (41), and an n-contact surface (63) is electrically connected to the n-contact (43) such that the p-contact surface (61) and the n-contact surface (63) are configured for external electrical and mechanical connection of the semiconductor laser (1). The contact surfaces (61, 63) are oriented parallel to a growth direction (G) of the semiconductor layer sequence (2). The semiconductor laser (1) can be surface-mounted without wires.