公开(公告)号：US20210050489A1

公开(公告)日：2021-02-18

申请号：US16965576

申请日：2018-03-12

申请人： OSRAM Opto Semiconductors GmbH

发明人： Keng Chong LIM ,  Norwin VON MALM

IPC分类号： H01L33/50 ,  H01L33/46 ,  C08J5/12 ,  C08J7/04 ,  C09K11/02

摘要： A phosphor sheet (6) is provided comprising the following elements: a first polymer sheet (1) of a first polymer material, which is partially cured, a second polymer sheet (4) of a second polymer material, which is partially cured, and a phosphor layer (4) comprising phosphor particles with a plurality of first phosphor particles, said first phosphor particles convert electromagnetic radiation of a first wavelength range into electromagnetic radiation of a second wavelength range, wherein the phosphor layer (3) is sandwiched between the first polymer sheet (1) and the second polymer sheet (4). Further, a method for the production of a phosphor sheet (6), an optoelectronic device and a method for the production of an optoelectronic device are provided.

公开(公告)号：US20160225957A1

公开(公告)日：2016-08-04

申请号：US15018845

申请日：2016-02-08

申请人： OSRAM Opto Semiconductors GmbH

发明人： Lutz HÖPPEL ,  Norwin VON MALM

IPC分类号： H01L33/46 ,  H01L29/861 ,  H01L33/62 ,  H01L27/02 ,  H01L33/38 ,  H01L33/44

CPC分类号： H01L33/46 ,  H01L27/0248 ,  H01L29/861 ,  H01L31/0224 ,  H01L31/02327 ,  H01L31/186 ,  H01L33/0079 ,  H01L33/20 ,  H01L33/382 ,  H01L33/40 ,  H01L33/44 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2933/0016 ,  H01L2933/0025 ,  Y02P70/521 ,  H01L2924/00

摘要： A method for producing an optoelectronic semiconductor chip is specified, comprising the following steps: providing an n-conducting layer (2), arranging a p-conducting layer (4) on the n-conducting layer (2), arranging a metal layer sequence (5) on the p-conducting layer (4),arranging a mask (6) at that side of the metal layer sequence (5) which is remote from the p-conducting layer (4),in places removing the metal layer sequence (5) and uncovering the p-conducting layer (4) using the mask (6), and in places neutralizing or removing the uncovered regions (4a) of the p-conducting layer (4) as far as the n-conducting layer (2) using the mask (6), wherein the metal layer sequence (5) comprises at least one mirror layer (51) and a barrier layer (52), and the mirror layer (51) of the metal layer sequence (5) faces the p-conducting layer (4).

公开(公告)号：US20200006602A1

公开(公告)日：2020-01-02

申请号：US16484767

申请日：2018-02-23

申请人： OSRAM Opto Semiconductors GmbH

发明人： David O'BRIEN ,  Norwin VON MALM ,  Jörg FRISCHEISEN ,  Angela EBERHARDT ,  Florian PESKOLLER

IPC分类号： H01L33/50 ,  H01L33/00 ,  H01L33/32 ,  H01L33/44

摘要： An optoelectronic component and a method for producing an optoelectronic component are disclosed. In an embodiment, an optoelectronic component includes a semiconductor layer sequence having an active region configured to emit radiation at least via a main radiation exit surface and a conversion element arranged directly downstream of the main radiation exit surface, wherein the conversion element is substrate-free and includes a first layer, wherein the first layer includes at least one conversion material embedded in a matrix material, wherein the matrix material includes at least one condensed inorganic sol-gel material selected from the following group consisting of water glass, metal phosphate, aluminum phosphate, modified monoaluminum phosphate, monoaluminum phosphate, alkoxytetramethoxysilane, tetraethylorthosilicate, methyltrimethoxysilane, methyltriethoxysilane, titanium alkoxide, silica sol, metal alkoxide, metal oxane, metal alkoxane, metal oxide, metal silicates, metal sulfates, and tungstates, and wherein the condensed sol-gel material has a proportion between 10 and 70 vol % in the first layer.

公开(公告)号：US20180254264A1

公开(公告)日：2018-09-06

申请号：US15757970

申请日：2016-09-08

申请人： OSRAM Opto Semiconductors GmbH

发明人： Alexander MARTIN ,  Norwin VON MALM

IPC分类号： H01L25/16 ,  H01L27/15 ,  H01L33/62 ,  H01L33/08

CPC分类号： H01L25/167 ,  H01L25/0753 ,  H01L27/156 ,  H01L33/0079 ,  H01L33/08 ,  H01L33/62

摘要： The invention relates to a component with at least one optoelectronic semiconductor chip (42), comprising: —a connection substrate (4), which has an assembly surface (4a) and electric contact structures, and —a plurality of structured semiconductor units (2), each of which has a plurality of monolithically connected pixels (21) with a respective active layer that emits light during operation, wherein: —the semiconductor units (2) are arranged at a lateral distance to one another on the assembly surface (4a), the distance (d) between adjacent semiconductor units (2) is at least 5 μm and maximally 55 μm, and the pixels (21) can be controlled in an electrically separated manner. The invention also relates to a method for producing said component.

公开(公告)号：US20180090540A1

公开(公告)日：2018-03-29

申请号：US15823431

申请日：2017-11-27

申请人： OSRAM Opto Semiconductors GmbH

发明人： Norwin VON MALM ,  Martin MANDL ,  Alexander F. PFEUFFER ,  Britta GOEOETZ

IPC分类号： H01L27/15 ,  H01L29/66 ,  H01L29/78 ,  H01L33/00 ,  H01L33/12 ,  H01L25/075 ,  H01L33/50

CPC分类号： H01L27/156 ,  H01L25/0753 ,  H01L29/66568 ,  H01L29/78 ,  H01L33/007 ,  H01L33/12 ,  H01L33/507 ,  H01L2924/0002 ,  H01L2933/0041 ,  H01L2933/0091 ,  H01L2924/00

摘要： In at least one embodiment, the method is designed for producing a light-emitting diode display (1). The method comprises the following steps: •A) providing a growth substrate (2); •B) applying a buffer layer (4) directly or indirectly onto a substrate surface (20); •C) producing a plurality of separate growth points (45) on or at the buffer layer (4); •D) producing individual radiation-active islands (5), originating from the growth points (45), wherein the islands (5) each comprise an inorganic semiconductor layer sequence (50) with at least one active zone (55) and have a mean diameter, when viewed from above onto the substrate surface (20), between 50 nm and 20 μm inclusive; and •E) connecting the islands (5) to transistors (6) for electrically controlling the islands (5).

公开(公告)号：US20200083401A1

公开(公告)日：2020-03-12

申请号：US15749768

申请日：2016-08-10

申请人： OSRAM Opto Semiconductors GmbH

发明人： David O'BRIEN ,  Britta GOEOETZ ,  Norwin VON MALM

IPC分类号： H01L33/00 ,  H01L33/50 ,  H01L33/54 ,  H01L33/06 ,  H01L51/56 ,  H01L27/32 ,  H01L51/52

摘要： The invention relates, in one embodiment, to a method for producing light-emitting semiconductor components, which method comprises the following steps: A) providing a glass capillary (2) composed of a glass material, B) filling the glass capillary (2) with luminescent substances (3), C) sealing the glass capillary (2) in a sealing region (22) by melting the glass material such that the glass capillary (2) is closed by the glass material itself, and D) attaching the sealed glass capillary (2) to a light-emitting diode chip (4) such that the radiation emitted by the light-emitting diode chip (4) is converted into visible light by the luminescent substances (3) during operation, wherein in step C) a distance between the sealing region (22) and the luminescent substances (3) is at most 7 mm, and wherein the different luminescent substances (3) are separated from each other along a longitudinal axis (L) of the glass capillary (2).

公开(公告)号：US20170125648A1

公开(公告)日：2017-05-04

申请号：US15318331

申请日：2015-06-10

申请人： OSRAM Opto Semiconductors GmbH

发明人： Hailing CUI ,  Norwin VON MALM ,  Britta GOEOETZ ,  Robert SCHULZ ,  Dominik SCHULTEN

IPC分类号： H01L33/50 ,  H01L25/075

CPC分类号： H01L33/505 ,  H01L25/0753 ,  H01L33/483 ,  H01L33/502 ,  H01L2933/0033 ,  H01L2933/0041

摘要： A method for producing a plurality of conversion elements (10) is specified, comprising providing a carrier substrate (1), introducing a converter material (3) into a matrix material (2), applying the matrix material (2) with the converter material (3) to individual regions (8) of the carrier substrate (1) in a non-continuous pattern, applying a barrier substrate (5) to the matrix material (2) and to the carrier substrate (1), and singulating the carrier substrate (1) with the matrix material (2) and the barrier substrate (5) into a plurality of conversion elements (10) along singulation lines (V), wherein the conversion elements (10) in each case comprise at least one of the regions (8) of the matrix material (2).

公开(公告)号：US20170077070A1

公开(公告)日：2017-03-16

申请号：US15310428

申请日：2015-03-31

申请人： OSRAM Opto Semiconductors GmbH

发明人： Thomas SCHWARZ ,  Frank SINGER ,  Juergen MOOSBURGER ,  Georg BOGNER ,  Herbert BRUNNER ,  Matthias SABATHIL ,  Norwin VON MALM

IPC分类号： H01L25/075 ,  H01L33/54 ,  H01L33/62

CPC分类号： H01L25/0753 ,  H01L24/25 ,  H01L33/0095 ,  H01L33/54 ,  H01L33/62 ,  H01L2224/18 ,  H01L2224/24137 ,  H01L2224/24195 ,  H01L2224/82 ,  H01L2924/0002 ,  H01L2924/19105 ,  H01L2933/0033 ,  H01L2933/0066 ,  H01L2924/00

摘要： The invention relates to a semiconductor component (1) comprising: a plurality of semiconductor chips (2), each having a semiconductor layer sequence (200) with an active region (20) for generating radiation; a radiation output side (10) that runs parallel to the active regions (20); a mounting side surface (11) which is provided for securing the semiconductor component, and which runs in a transverse or perpendicular direction to the radiation output side; a moulded body (4) which is shaped in places on the semiconductor chips, and which at least partially forms the mounting side surface; and a contact structure (50) which is arranged on the moulded body, and which connects at least two semiconductor chips of the plurality of semiconductor chips in an electrically conductive manner. The invention also relates to a lighting device (9) and to a method for producing a semiconductor component.

摘要翻译： 本发明涉及一种半导体部件（1），包括：多个半导体芯片（2），每个具有半导体层序列（200），具有用于产生辐射的有源区（20） 辐射输出侧（10），其平行于有源区域（20）延伸; 安装侧表面（11），其设置用于固定所述半导体部件，并且沿横向或垂直于所述辐射输出侧的方向延伸; 成形体（4），其形成在所述半导体芯片上的位置，并且至少部分地形成所述安装侧表面; 以及布置在成型体上并且以导电方式连接多个半导体芯片中的至少两个半导体芯片的接触结构（50）。 本发明还涉及一种照明装置（9）及其制造方法。

公开(公告)号：US20170062351A1

公开(公告)日：2017-03-02

申请号：US15119376

申请日：2015-02-17

申请人： OSRAM Opto Semiconductors GmbH

发明人： Norwin VON MALM ,  Alexander F. PFEUFFER ,  Tansen VARGHESE ,  Philipp KREUTER

IPC分类号： H01L23/544 ,  H01L31/0352 ,  H01L33/32 ,  H01L31/18 ,  H01L33/30 ,  H01L33/42 ,  H01L31/0224 ,  H01L33/00 ,  H01L33/06 ,  H01L31/0304

CPC分类号： H01L23/544 ,  H01L21/76898 ,  H01L31/02245 ,  H01L31/022466 ,  H01L31/03046 ,  H01L31/03048 ,  H01L31/035236 ,  H01L31/035281 ,  H01L31/056 ,  H01L31/0693 ,  H01L31/0735 ,  H01L31/186 ,  H01L31/1892 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/06 ,  H01L33/30 ,  H01L33/32 ,  H01L33/382 ,  H01L33/42 ,  H01L2223/5446 ,  H01L2933/0016 ,  Y02E10/52 ,  Y02E10/544 ,  Y02P70/521

摘要： A method for producing a plurality of semiconductor components (1) is provided, comprising the following steps: a) providing a semiconductor layer sequence (2) having a first semiconductor layer (21), a second semiconductor layer (22) and an active region (25), said active region being arranged between the first semiconductor layer and the second semiconductor layer for generating and/or receiving radiation; b) forming a first connection layer (31) on the side of the second connection layer facing away from the first semiconductor layer; c) forming a plurality of cut-outs (29) through the semiconductor layer sequence; d) forming a conducting layer (4) in the cut-outs for establishing an electrically conductive connection between the first semiconductor layer and the first connection layer; and e) separating into the plurality of semiconductor components, wherein a semiconductor body (20) having at least one of the plurality of cut-outs arises from the semiconductor layer sequence for each semiconductor component and the at least one cut-out is completely surrounded by the semiconductor body in a top view of the semiconductor body. Furthermore, a semiconductor component is provided.

摘要翻译： 提供一种用于制造多个半导体部件（1）的方法，包括以下步骤：a）提供具有第一半导体层（21），第二半导体层（22）和有源区域（22）的半导体层序列（2） （25），所述有源区域布置在第一半导体层和第二半导体层之间，用于产生和/或接收辐射; b）在第二连接层的背离第一半导体层的一侧上形成第一连接层（31）; c）通过半导体层序列形成多个切口（29）; d）在所述切口中形成导电层（4），以在所述第一半导体层和所述第一连接层之间建立导电连接; 以及e）分离成多个半导体部件，其中具有多个切口中的至少一个的半导体本体（20）从每个半导体部件的半导体层序列产生，并且至少一个切口被完全包围 通过半导体本体在半导体本体的俯视图中。 此外，提供了半导体部件。

公开(公告)号：US20150325598A1

公开(公告)日：2015-11-12

申请号：US14652089

申请日：2013-11-29

申请人： OSRAM OPTO SEMICONDUCTORS GMBH

发明人： Alexander F. PFEUFFER ,  Norwin VON MALM

IPC分类号： H01L27/12 ,  H01L27/15

CPC分类号： H01L27/1222 ,  H01L25/0753 ,  H01L25/167 ,  H01L27/1274 ,  H01L27/156 ,  H01L33/24 ,  H01L33/382 ,  H01L33/385 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

摘要： The invention relates to a display device, comprising a layer stack, which comprises a semiconductor layer sequence having an active region for producing radiation and comprises a circuit layer. The semiconductor layer sequence forms a plurality of pixels. For each pixel, a respective switch connected in an electrically conductive manner to the pixel is formed in the circuit layer. The invention further relates to a method for producing a display device.

摘要翻译： 本发明涉及一种显示装置，包括层堆叠，其包括具有用于产生辐射的有源区域并包括电路层的半导体层序列。 半导体层序列形成多个像素。 对于每个像素，在电路层中形成以导电方式连接到像素的相应开关。 本发明还涉及一种用于制造显示装置的方法。