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公开(公告)号：US20220102583A1
公开(公告)日：2022-03-31
申请号：US17426456
申请日：2020-01-29
发明人： Thorsten BAUMHEINRICH , Martin BEHRINGER , Andreas BIEBERSDORF , Ruth BOSS , Michael BRANDL , Peter BRICK , Jean-Jacques DROLET , Hubert HALBRITTER , Laura KREINER , Erwin LANG , Andreas LEBER , Tobias MEYER , Alexander PFEUFFER , Marc PHILIPPENS , Jens RICHTER , Thomas SCHWARZ , Paul TA , Tansen VARGHESE , Xue WANG , Sebastian WITTMANN , Julia STOLZ , Karsten DIEKMANN , Karl ENGL , Siegfried HERRMANN , Berthold HAHN , Stefan ILLEK , Bruno JENTZSCH , Korbinian PERZLMAIER , Ines PIETZONKA , Andreas RAUSCH , Kilian REGAU , Tilman RUEGHEIMER , Simon SCHWALENBERG , Christopher SOELL , Peter STAUSS , Petrus SUNDGREN , Hoa VU , Christopher WIESMANN , Georg BOGNER , Patrick HOERNER , Christoph KLEMP , Jens MUELLER , Kerstin NEVELING , Jong PARK , Christine RAFAEL , Frank SINGER , Kanishk CHAND , Felix FEIX , Christian MUELLER , Eva-Maria RUMMEL , Nicole HEITZER , Marie ASSMANN , Christian BERGER , Ana KANEVCE
IPC分类号： H01L33/38 , H01L27/15 , H01L25/075 , H01L21/683 , H01L33/06 , H01L33/18 , H01L33/30 , H01L33/40 , H01L33/42 , H01L33/50 , G09G3/32
摘要： The invention relates to various aspects of a μ-LED or a μ-LED array for augmented reality or lighting applications, in particular in the automotive field. The μ-LED is characterized by particularly small dimensions in the range of a few μm.
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公开(公告)号：US20210405277A1
公开(公告)日：2021-12-30
申请号：US17475030
申请日：2021-09-14
发明人： Peter BRICK , Jean-Jacques DROLET , Hubert HALBRITTER , Laura KREINER , Thomas SCHWARZ , Tilman RUEGHEIMER , Frank SINGER
IPC分类号： F21V8/00 , G02B27/01 , H01L25/075
摘要： The invention relates to various aspects of a μ-LED or a μ-LED array for augmented reality or lighting applications, in particular in the automotive field. The μ-LED is characterized by particularly small dimensions in the range of a few μm.
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公开(公告)号：US20210405276A1
公开(公告)日：2021-12-30
申请号：US17474975
申请日：2021-09-14
发明人： Peter BRICK , Jean-Jacques DROLET , Hubert HALBRITTER , Laura KREINER , Thomas SCHWARZ , Tilman RUEGHEIMER , Frank SINGER
IPC分类号： F21V8/00 , G02B27/01 , H01L25/075
摘要： The invention relates to various aspects of a μ-LED or a μ-LED array for augmented reality or lighting applications, in particular in the automotive field. The μ-LED is characterized by particularly small dimensions in the range of a few μm.
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公开(公告)号：US20180301873A1
公开(公告)日：2018-10-18
申请号：US15765997
申请日：2016-09-29
CPC分类号： H01S5/227 , H01L21/568 , H01L24/19 , H01L2224/04105 , H01L2924/18162 , H01S5/0201 , H01S5/02228 , H01S5/0224 , H01S5/02461 , H01S5/02469 , H01S5/0422 , H01S5/0425 , H01S5/22 , H01S5/32341 , H01S2301/176
摘要： In one embodiment of the invention, the semiconductor laser (1) comprises a semiconductor layer sequence (2). The semiconductor layer sequence (2) contains an n-type region (23), a p-type region (21) and an active zone (22) lying between the two. A laser beam is produced in a resonator path (3). The resonator path (3) is aligned parallel to the active zone (22). In addition, the semiconductor laser (1) contains an electrical p-contact (41) and an electrical n-contact (43) each of which is located on the associated region (21, 23) of the semiconductor layer sequence (2) and is configured to input current directly into the associated region (21, 23). The n-contact (43) extends from the p-type region (21) through the active zone (22) and into the n-type region (23) and is located, when viewed from above, next to the resonator path (3).
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公开(公告)号：US20180301866A1
公开(公告)日：2018-10-18
申请号：US15765706
申请日：2016-09-29
摘要： In one embodiment of the invention, the semiconductor laser (1) comprises a semiconductor layer sequence (2). The semiconductor layer sequence (2) contains an n-type region (23), a p-type region (21) and an active zone (22) lying between the two. A laser beam is produced in a resonator path (3). The resonator path (3) is aligned parallel to the active zone (22). In addition, the semiconductor laser (1) contains an electrical p-contact (41) and an electrical n-contact (43) each of which is located on the associated region (21, 23) of the semiconductor layer sequence (2) and is configured to input current directly into the associated region (21, 23). A p-contact surface (61) is electrically connected to the p-contact (41), and an n-contact surface (63) is electrically connected to the n-contact (43) such that the p-contact surface (61) and the n-contact surface (63) are configured for external electrical and mechanical connection of the semiconductor laser (1). The contact surfaces (61, 63) are oriented parallel to a growth direction (G) of the semiconductor layer sequence (2). The semiconductor laser (1) can be surface-mounted without wires.
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