公开(公告)号：US20240036364A1

公开(公告)日：2024-02-01

申请号：US17875620

申请日：2022-07-28

Applicant: PALO ALTO RESEARCH CENTER INCORPORATED

Inventor： Christopher L. Chua ,  Ching-Fuh Lin ,  Zhihong Yang ,  Max Batres

IPC: G02F1/01

CPC classification number: G02F1/0147

Abstract: A transfer system includes a transfer layer formed of a thermally switchable material that undergoes a phase change when heated. A side of the transfer layer is placed in contact with an outward-facing side of a chiplet during a transfer operation. An optical absorber material is located on at least one of the outward facing side of the chiplet or an inward facing side of the chiplet. An optical energy source is operable to apply optical energy to the optical absorber material through the transfer layer to selectively heat a region of the transfer layer that corresponds to a location of the chiplet. The region holds the chiplet when the optical energy is removed during the transfer operation. The region is subsequently heated during the transfer operation to release the chiplet.

公开(公告)号：US20240192032A1

公开(公告)日：2024-06-13

申请号：US18078189

申请日：2022-12-09

Applicant: PALO ALTO RESEARCH CENTER INCORPORATED

Inventor： Thomas Wunderer ,  Ching-Fuh Lin ,  Christopher L. Chua

IPC: G01D5/353 ,  G01K11/3206 ,  G01L1/24

CPC classification number: G01D5/35316 ,  G01K11/3206 ,  G01L1/246

Abstract: A sensor includes a light emitter capable of producing stimulated emission. The sensor includes an optical fiber comprising at least one fiber Bragg grating. A first end of the optical fiber is optically coupled to a first emitting end of the light emitter. The fiber Bragg grating is located at a measurement region of the optical fiber away from the first end. A change in wavelength of the laser emission in the optical fiber is induced by a change in peak reflectivity of the fiber Bragg grating. The change in the peak reflectivity occurs in response to an environmental change at the measurement region, e.g., which changes a physical periodicity and/or the refractive index of the grating. The sensor includes an optical detector coupled to the optical fiber or the light emitter that detects the change in the wavelength.

公开(公告)号：US20240038574A1

公开(公告)日：2024-02-01

申请号：US17875729

申请日：2022-07-28

Applicant: PALO ALTO RESEARCH CENTER INCORPORATED

Inventor： Christopher L. Chua ,  Ching-Fuh Lin ,  Zhihong Yang

IPC: H01L21/687 ,  H01L21/677

CPC classification number: H01L21/68707 ,  H01L21/67781 ,  H01L21/67766

Abstract: A transfer system includes first and second optical energy sources operable to provide a respective first and second optical energy at respective first and second wavelengths. A chiplet has a bonding feature configured to interface with a corresponding bonding feature of a target substrate. At least one of the bonding features absorb at the first wavelength such that applying the first optical energy bonds the chiplet to the target substrate or removes a bond between the chiplet and the target substrate. The system includes a transfer layer formed of a thermally switchable material that undergoes a phase change when heated. An optical absorber absorbs at the second wavelength such that applying the second optical energy heats a region of the transfer layer at a location of the chiplet when removing the chiplets from a source substrate during the transfer operation.

公开(公告)号：US20240036363A1

公开(公告)日：2024-02-01

申请号：US17875610

申请日：2022-07-28

Applicant: PALO ALTO RESEARCH CENTER INCORPORATED

Inventor： Christopher L. Chua ,  Ching-Fuh Lin ,  Zhihong Yang

IPC: G02F1/01

CPC classification number: G02F1/0147

Abstract: A transfer apparatus includes a transfer layer formed of a thermally switchable material that undergoes a phase change when heated. A first side of the transfer layer is placed in contact with a chiplet during a transfer operation. An optical absorber material is thermally coupled the transfer layer. An optical energy source is operable to apply optical energy to the optical absorber material to selectively heat a region of the transfer layer that corresponds to a location of the chiplet. The region holds the chiplet when the optical energy is removed during the transfer operation. The region is subsequently heated during the transfer operation to release the chiplet. The transfer layer can be reused for repeated transfer operations.