Abstract:
An imaging device includes a first pixel, a second pixel, and a first voltage supply circuit. The first pixel includes a first photoelectric converter that generates signal charge by photoelectric conversion and a first signal detection circuit connected to the first photoelectric converter. The second pixel includes a second photoelectric converter that generates signal charge by photoelectric conversion and a second signal detection circuit connected to the second photoelectric converter. The first photoelectric converter includes a first pixel electrode, a first counter electrode facing the first pixel electrode, and a first photoelectric conversion layer located between the first pixel electrode and the first counter electrode. A voltage that the first voltage supply circuit applies between the first pixel electrode and the first counter electrode is switched between a plurality of voltages in part of a one-frame period excluding a readout period and a reset period of the second photoelectric converter.
Abstract:
A composition contains a naphthalocyanine derivative represented by the following formula: where R1 to R8 are independently an alkyl group and R9 to R12 are independently an aryl group, and at least one hydrogen atom in at least one selected from the group consisting of R9, R10, R11, and R12 is substituted by an electron-withdrawing group.
Abstract:
An imaging device includes a first pixel and a second pixel. The first pixel includes a first photoelectric converter that generates first signal charge by photoelectric conversion and that has sensitivity to a first wavelength range that is invisible and a first signal detection circuit connected to the first photoelectric converter. The second pixel includes a second photoelectric converter that generates second signal charge by photoelectric conversion and that has sensitivity to a second wavelength range and a second signal detection circuit connected to the second photoelectric converter. An exposure period of the second photoelectric converter does not overlap a light-emitting period of light based on lighting, the light being incident on the first photoelectric converter and having a luminescence peak in the first wavelength range. A readout period during which the second signal detection circuit reads out the second signal charge does not overlap the light-emitting period.
Abstract:
An imaging device includes a semiconductor substrate, a first pixel, and second pixels adjacent to the first pixel. Each of the first pixel and the second pixels includes a first photoelectric conversion layer, a first pixel electrode, a first plug that electrically connects the semiconductor substrate and the first pixel electrode, a second photoelectric conversion layer, a second pixel electrode, and a second plug that electrically connects the semiconductor substrate and the second pixel electrode. When the imaging device is viewed in a normal direction of the semiconductor substrate, a smallest distance of distances between the first plug in the first pixel and the first plugs in the respective second pixels is smaller than a smallest distance of distances between the first plug in the first pixel and the second plugs in the first pixel and the respective second pixels.
Abstract:
An imaging apparatus includes a semiconductor substrate; a first electrode; a second electrode; a photoelectric conversion layer disposed between the first electrode and the second electrode, and including a donor organic semiconductor material and an acceptor organic semiconductor material; a charge accumulation node positioned within the semiconductor substrate and electrically connected to the second electrode; and a first blocking layer disposed between the first electrode and the photoelectric conversion layer. The photoelectric conversion layer has an ionization potential of lower than or equal to 5.3 eV. The first blocking layer has an electron affinity lower than an electron affinity of the acceptor organic semiconductor material included in the photoelectric conversion layer. The imaging apparatus has spectral sensitivity in a near-infrared light region having wavelengths of greater than or equal to 650 nm and less than or equal to 3000 nm.
Abstract:
A camera system includes a light source having a peak emission wavelength at room temperature in a near-infrared region, and an imaging device including a photoelectric conversion element that converts near-infrared light into an electric charge. An external quantum efficiency of the photoelectric conversion element has a first peak at a first wavelength longer than the peak emission wavelength, and the external quantum efficiency at the first wavelength is higher than the external quantum efficiency at the peak emission wavelength.
Abstract:
A photoelectric conversion element includes a first electrode, a second electrode, a photoelectric conversion layer positioned between the first electrode and the second electrode and including a donor semiconductor material and an acceptor semiconductor material, and a first charge blocking layer positioned between the first electrode and the photoelectric conversion layer. The first charge blocking layer includes a first material and a second material having an energy band gap narrower than that of the first material. The electron affinity of the first material is lower than that of the second material, and the ionization potential of the first material is higher than that of the second material.
Abstract:
An imaging device includes pixels. Each of the pixels includes a first electrode, a second electrode, a photoelectric conversion layer that is located between the first electrode and the second electrode, that contains a donor semiconductor material and an acceptor semiconductor material, and that generates a pair of an electron and a hole, a first charge blocking layer located between the first electrode and the photoelectric conversion layer, a second charge blocking layer located between the second electrode and the photoelectric conversion layer, and a charge storage region that is electrically connected to the second electrode and that stores the hole. The difference between the electron affinity of the acceptor semiconductor material and the electron affinity of the first charge blocking layer is larger than the difference between the ionization potential of the donor semiconductor material and the ionization potential of the second charge blocking layer.
Abstract:
The light-emitting device according to one aspect of the present disclosure includes a flexible substrate, a lower barrier layer positioned above the flexible substrate, a first light-emitting element and a second light-emitting element positioned above the lower barrier layer, a first upper barrier layer positioned above the first light-emitting element and including a first inorganic material, and a second upper barrier layer positioned above the second light-emitting element and including a second inorganic material. The first upper barrier layer and the second upper barrier layer are spaced from each other at least in a region between the first light-emitting element and the second light-emitting element.
Abstract:
A photoelectric conversion device includes a first electrode, a second electrode facing the first electrode, and a photoelectric conversion layer located between the first electrode and the second electrode and including a bulk heterojunction layer containing a donor organic compound and an acceptor organic compound. The donor organic compound includes a first substituent. The acceptor organic compound includes an aromatic portion and a second substituent binding to the aromatic portion and having dipole-dipole interaction with the first substituent.