Capacitor and method for producing same

    公开(公告)号:US11784000B2

    公开(公告)日:2023-10-10

    申请号:US17472490

    申请日:2021-09-10

    CPC classification number: H01G4/008

    Abstract: A capacitor includes a silicon substrate, a conductor layer, and a dielectric layer. The silicon substrate has a principal surface including a capacitance generation region and a non-capacitance generation region. The silicon substrate has a porous part provided in a thickness direction in the capacitance generation region. The conductor layer has a surface layer part at least covering part of a surface of the capacitance generation region and a filling part filled in at least part of fine pores of the porous part. The dielectric layer is provided between an inner surface of the fine pores and the filling part.

    Capacitor and method for producing same

    公开(公告)号:US11948995B2

    公开(公告)日:2024-04-02

    申请号:US17911077

    申请日:2021-01-22

    CPC classification number: H01L29/66181 H01L29/0665 H01L29/945

    Abstract: A capacitor includes a silicon substrate, a conductor layer, and a dielectric layer. The silicon substrate has a principal surface including a capacitance generation region and a non-capacitance generation region. The silicon substrate includes a porous part provided in a thickness direction in the capacitance generation region. The conductor layer includes a surface layer part at least covering part of a surface of the capacitance generation region and a filling part filled in at least part of the porous part. The dielectric layer is provided between an inner surface of the porous part and the filling part. The porous part includes a macroporous part having macro pores and a nanoporous part formed in at least part of inner surfaces of the macro pores and having nano pores smaller than the macro pores.

    CAPACITOR AND METHOD FOR PRODUCING SAME

    公开(公告)号:US20210407734A1

    公开(公告)日:2021-12-30

    申请号:US17472490

    申请日:2021-09-10

    Abstract: A capacitor includes a silicon substrate, a conductor layer, and a dielectric layer. The silicon substrate has a principal surface including a capacitance generation region and a non-capacitance generation region. The silicon substrate has a porous part provided in a thickness direction in the capacitance generation region. The conductor layer has a surface layer part at least covering part of a surface of the capacitance generation region and a filling part filled in at least part of fine pores of the porous part. The dielectric layer is provided between an inner surface of the fine pores and the filling part.

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