CAPACITOR AND METHOD FOR PRODUCING SAME

    公开(公告)号:US20210407734A1

    公开(公告)日:2021-12-30

    申请号:US17472490

    申请日:2021-09-10

    Abstract: A capacitor includes a silicon substrate, a conductor layer, and a dielectric layer. The silicon substrate has a principal surface including a capacitance generation region and a non-capacitance generation region. The silicon substrate has a porous part provided in a thickness direction in the capacitance generation region. The conductor layer has a surface layer part at least covering part of a surface of the capacitance generation region and a filling part filled in at least part of fine pores of the porous part. The dielectric layer is provided between an inner surface of the fine pores and the filling part.

    Infrared sensor chip, and infrared sensor employing same

    公开(公告)号:US10989603B2

    公开(公告)日:2021-04-27

    申请号:US16486473

    申请日:2018-02-15

    Abstract: The disclosure has a configuration including: a supporting substrate having a cavity; at least one bridge section extending directly above the cavity and having at least one end supported by the supporting substrate and an other end; and a thermopile wiring formed in the bridge section and including hot junctions in the bridge section and cold junctions directly above the supporting substrate, the hot junctions being connected to the cold junctions. The bridge section is provided with: at least one breakage detection wiring for detecting breakage of the bridge section; and at least one heater wiring. The breakage detection wiring is wired along the thermopile wiring. The heater wiring is wired such that part of the heater wiring is in an area between the other end of the bridge section and the hot junctions.

    Capacitor and method for producing same

    公开(公告)号:US11948995B2

    公开(公告)日:2024-04-02

    申请号:US17911077

    申请日:2021-01-22

    CPC classification number: H01L29/66181 H01L29/0665 H01L29/945

    Abstract: A capacitor includes a silicon substrate, a conductor layer, and a dielectric layer. The silicon substrate has a principal surface including a capacitance generation region and a non-capacitance generation region. The silicon substrate includes a porous part provided in a thickness direction in the capacitance generation region. The conductor layer includes a surface layer part at least covering part of a surface of the capacitance generation region and a filling part filled in at least part of the porous part. The dielectric layer is provided between an inner surface of the porous part and the filling part. The porous part includes a macroporous part having macro pores and a nanoporous part formed in at least part of inner surfaces of the macro pores and having nano pores smaller than the macro pores.

    Capacitor and method for producing same

    公开(公告)号:US11784000B2

    公开(公告)日:2023-10-10

    申请号:US17472490

    申请日:2021-09-10

    CPC classification number: H01G4/008

    Abstract: A capacitor includes a silicon substrate, a conductor layer, and a dielectric layer. The silicon substrate has a principal surface including a capacitance generation region and a non-capacitance generation region. The silicon substrate has a porous part provided in a thickness direction in the capacitance generation region. The conductor layer has a surface layer part at least covering part of a surface of the capacitance generation region and a filling part filled in at least part of fine pores of the porous part. The dielectric layer is provided between an inner surface of the fine pores and the filling part.

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