IMAGING DEVICE
    1.
    发明申请

    公开(公告)号:US20210366992A1

    公开(公告)日:2021-11-25

    申请号:US17394091

    申请日:2021-08-04

    Abstract: An imaging device including: a semiconductor substrate including a pixel region and a peripheral region; an insulating layer that covers the pixel and peripheral regions; first electrodes located on the insulating layer above the pixel region; a photoelectric conversion layer that covers the first electrodes; a second electrode that covers the photoelectric conversion layer; detection circuitry configured to be electrically connected to the first electrodes; peripheral circuitry configured to be electrically connected to the detection circuitry, and including analog circuitry; and a third electrode electrically connected to the second electrode. The third electrode overlaps the analog circuitry in a plan view, and in all cross-sections perpendicular to a surface of the semiconductor substrate, parallel to the column direction or the row direction, intersecting at least one of the first electrodes, and intersecting the third electrode, no transistor of the digital circuitry is located directly below the third electrode.

    ELECTRONIC DEVICE
    2.
    发明公开
    ELECTRONIC DEVICE 审中-公开

    公开(公告)号:US20240274626A1

    公开(公告)日:2024-08-15

    申请号:US18625946

    申请日:2024-04-03

    CPC classification number: H01L27/14609 H01L27/14636

    Abstract: An electronic device includes: a capacitor; an insulating layer; at least one trench provided in the insulating layer; and a first conductive plug, at least part of which is surrounded by the insulating layer. The capacitor includes: a first lower electrode provided along an inner wall of the at least one trench, a dielectric layer provided on the first lower electrode, and an upper electrode provided on the dielectric layer. At least part of the first conductive plug is positioned between an upper surface of the insulating layer and a lowermost portion of the at least one trench.

    IMAGING DEVICE
    3.
    发明申请

    公开(公告)号:US20210043688A1

    公开(公告)日:2021-02-11

    申请号:US17078440

    申请日:2020-10-23

    Abstract: An imaging device including a semiconductor substrate including a pixel region and a peripheral region; an insulating layer covering the pixel and peripheral regions; first electrodes located on the insulating layer above the pixel region; a photoelectric conversion layer covering the first electrodes; a second electrode that covers the photoelectric conversion layer; detection circuitry electrically connected to the first electrodes; peripheral circuitry electrically connected to the detection circuitry, and; and a third electrode located on the insulating layer. The second electrode includes a connection region in which the second electrode is connected to third electrode, the connection region overlaps analog circuitry in a plan view, and in any cross-sections perpendicular to a surface of the semiconductor substrate and parallel to a column or row direction and that intersects at least one of the first electrodes, the digital circuitry includes no transistor that is located directly below the connection region.

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