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公开(公告)号:US20240274626A1
公开(公告)日:2024-08-15
申请号:US18625946
申请日:2024-04-03
Inventor: Masayuki TAKASE , Shunsuke ISONO , Yuuko TOMEKAWA
IPC: H01L27/146
CPC classification number: H01L27/14609 , H01L27/14636
Abstract: An electronic device includes: a capacitor; an insulating layer; at least one trench provided in the insulating layer; and a first conductive plug, at least part of which is surrounded by the insulating layer. The capacitor includes: a first lower electrode provided along an inner wall of the at least one trench, a dielectric layer provided on the first lower electrode, and an upper electrode provided on the dielectric layer. At least part of the first conductive plug is positioned between an upper surface of the insulating layer and a lowermost portion of the at least one trench.
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公开(公告)号:US20190051684A1
公开(公告)日:2019-02-14
申请号:US16164590
申请日:2018-10-18
Inventor: Masayuki TAKASE , Takayoshi YAMADA , Tokuhiko TAMAKI
IPC: H01L27/146 , H04N5/378 , H04N5/353 , H01L27/30
Abstract: An imaging device includes a pixel comprising a photoelectric conversion layer having a first surface and a second surface opposite to the first surface; a pixel electrode on the first surface; an auxiliary electrode on the first surface, the auxiliary electrode being spaced from the pixel electrode; an upper electrode on the second surface, the upper electrode facing the pixel electrode and the auxiliary electrode; and an amplification transistor having a gate coupled to the pixel electrode. The imaging device also includes voltage application circuitry that generates a first voltage and a second voltage different from the first voltage, the voltage application circuitry being coupled to the auxiliary electrode. The voltage application circuitry selectively supplies either the first voltage or the second voltage to the auxiliary electrode.
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公开(公告)号:US20200303436A1
公开(公告)日:2020-09-24
申请号:US16897509
申请日:2020-06-10
Inventor: Masayuki TAKASE , Takayoshi YAMADA , Tokuhiko TAMAKI
IPC: H01L27/146 , H04N5/378 , H04N5/353
Abstract: An imaging device includes a photoelectric conversion layer having a first surface and a second surface opposite to the first surface; a counter electrode on the first surface; a first electrode on the second surface; a second electrode on the second surface, the second electrode being spaced from the first electrode; and an auxiliary electrode on the second surface between the first electrode and the second electrode. The auxiliary electrode is spaced from the first electrode and the second electrode, where a shortest distance between the first electrode and the auxiliary electrode is different from a shortest distance between the second electrode and the auxiliary electrode.
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公开(公告)号:US20190273880A1
公开(公告)日:2019-09-05
申请号:US16410893
申请日:2019-05-13
Inventor: Junji HIRASE , Yoshihiro SATO , Yoshinori TAKAMI , Masayuki TAKASE , Masashi MURAKAMI
IPC: H04N5/361 , H04N5/363 , H04N5/359 , H04N5/3745 , H04N5/369 , H01L27/146
Abstract: An imaging device includes a semiconductor layer including an impurity region of a first conductivity type, a photoelectric converter electrically connected to the impurity region, and a transistor having a gate of a second conductivity type different from the first conductivity type, a source and a drain, the transistor including the impurity region as one of the source and the drain, the gate being electrically connected to the impurity region.
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公开(公告)号:US20170150073A1
公开(公告)日:2017-05-25
申请号:US15423397
申请日:2017-02-02
Inventor: Takayoshi YAMADA , Masayuki TAKASE , Tokuhiko TAMAKI , Masashi MURAKAMI
CPC classification number: H04N5/359 , H01L27/14603 , H01L27/14609 , H01L27/1461 , H01L27/14612 , H01L27/14623 , H01L27/14636 , H01L27/14645 , H01L27/14667 , H04N5/23232 , H04N5/265 , H04N5/357 , H04N5/361 , H04N5/374 , H04N5/378
Abstract: An imaging device comprises at least one unit pixel cell. Each of them comprises: a photoelectric conversion layer having a first and second surfaces; a pixel electrode and a shield electrode located on the first surface and separated from each other, a shield voltage being applied to the shield electrode; an upper electrode located on the second surface and opposing to the pixel electrode and the shield electrode, a counter voltage being applied to the upper electrode; a charge accumulation node electrically connected to the pixel electrode; and a charge detection circuit electrically connected to the charge accumulation node. An absolute value of a difference between the shield voltage and the counter voltage is larger than an absolute value of a difference between the counter voltage and a voltage of the pixel electrode.
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