公开(公告)号：US20240339471A1

公开(公告)日：2024-10-10

申请号：US18744109

申请日：2024-06-14

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Daisuke WAKABAYASHI ,  Yuuko TOMEKAWA

IPC: H01L27/146 ,  H04N25/77

CPC classification number: H01L27/14623 ,  H01L27/14612 ,  H01L27/14636 ,  H04N25/77

Abstract: An imaging device includes a pixel section and a peripheral circuitry section provided around the pixel section. The pixel section includes: a photoelectric conversion film; a top electrode located above the photoelectric conversion film; bottom electrodes that face the top electrode, with the photoelectric conversion film being disposed between the top electrode and the bottom electrodes; and a first light-shielding film that overlaps part of the photoelectric conversion film in a plan view and that is electrically connected to the top electrode. The first light-shielding film has electrical conductivity. The peripheral circuitry section includes peripheral circuitry and a second light-shielding film that overlaps at least part of the peripheral circuitry in the plan view. The first light-shielding film and the second light-shielding film are separated from each other.

公开(公告)号：US20180114810A1

公开(公告)日：2018-04-26

申请号：US15839614

申请日：2017-12-12

Applicant: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.

Inventor： Yuuko TOMEKAWA ,  Tokuhiko Tamaki

IPC: H01L27/146 ,  H04N5/363 ,  H01L27/30 ,  H04N5/232

CPC classification number: H01L27/14643 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/14612 ,  H01L27/14623 ,  H01L27/14636 ,  H01L27/14665 ,  H01L27/307 ,  H04N5/23245 ,  H04N5/363

Abstract: An imaging device includes: a semiconductor substrate; a photoelectric conversion element including a first electrode, a second electrode, and a photoelectric conversion film, supported on the semiconductor substrate, and generating a signal by performing photoelectric conversion on incident light; a multilayer wiring structure including an upper wiring layer and a lower wiring layer provided between the semiconductor substrate and the second electrode; and a signal detection circuit provided in the semiconductor substrate and the multilayer wiring structure, including a signal detection transistor and a first capacitance element, and detecting the signal. The signal detection transistor includes a gate and a source region and a drain region, the first capacitance element includes a first lower electrode, a first upper electrode, and a dielectric film disposed therebetween, the upper wiring layer is disposed between the second electrode and the gate, and the upper wiring layer includes the first upper electrode.

公开(公告)号：US20250107312A1

公开(公告)日：2025-03-27

申请号：US18977399

申请日：2024-12-11

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Sanshiro SHISHIDO ,  Takahiro KOYANAGI ,  Yuuko TOMEKAWA ,  Shinichi MACHIDA

IPC: H10K39/32 ,  H10K30/30

Abstract: An imaging device includes a first pixel and a second pixel adjacent to the first pixel. Each of the first pixel and the second pixel includes a first electrode, a second electrode positioned on or above the first electrode and facing the first electrode, a photoelectric conversion layer positioned between the first electrode and the second electrode, and a first charge-blocking layer positioned between the first electrode and the photoelectric conversion layer. The first charge-blocking layer of the first pixel is separated from the first charge-blocking layer of the second pixel. The photoelectric conversion layer is disposed continuously to the first pixel and the second pixel. An area of the first charge-blocking layer of the first pixel is larger than an area of the first electrode of the first pixel in plan view.

公开(公告)号：US20240213279A1

公开(公告)日：2024-06-27

申请号：US18598856

申请日：2024-03-07

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Yuuko TOMEKAWA ,  Katsuya NOZAWA

IPC: H01L27/146 ,  H10K39/32

CPC classification number: H01L27/14605 ,  H01L27/14636 ,  H10K39/32

Abstract: An image sensor includes pixel electrodes, a control electrode, a photoelectric conversion film arranged on the pixel electrodes, a transparent electrode arranged on the photoelectric conversion film, an insulating layer arranged on at least a portion of a top surface of the transparent electrode, and a connection layer that electrically connects the control electrode to the transparent electrode. The connection layer is in contact with at least one side surface of the transparent electrode. A side surface of the insulating layer, the at least one side surface of the transparent electrode, and a side surface of the photoelectric conversion film are aligned with each other.

公开(公告)号：US20250098357A1

公开(公告)日：2025-03-20

申请号：US18968825

申请日：2024-12-04

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Yuuko TOMEKAWA ,  Yoshihiro SATO

IPC: H01L27/146

Abstract: An imaging device includes a semiconductor substrate and pixels. Each of the pixels includes a first capacitive element including a first electrode provided above the semiconductor substrate, a second electrode provided above the semiconductor substrate, and a dielectric layer located between the first electrode and the second electrode. At least one selected from the group consisting of the first electrode and the second electrode has a first electrical contact point electrically connected to a first electrical element and a second electrical contact point electrically connected to a second electrical element different from the first electrical element. The first capacitive element includes at least one trench portion having a trench shape.

公开(公告)号：US20210028207A1

公开(公告)日：2021-01-28

申请号：US17067151

申请日：2020-10-09

Applicant: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.

Inventor： Yuuko TOMEKAWA ,  Takahiro KOYANAGI ,  Hiroyuki AMIKAWA ,  Yasuyuki ENDOH

IPC: H01L27/146

Abstract: An imaging device includes: a semiconductor substrate; a first photoelectric converter which is disposed in the semiconductor substrate; a second photoelectric converter different from the first photoelectric converter, which is disposed in the semiconductor substrate; a wiring layer disposed on or above the semiconductor substrate; and a capacitor which is disposed in the wiring layer and surrounds the first photoelectric converter in plan view. The capacitor includes a first electrode, a second electrode, and a dielectric layer disposed between the first electrode and the second electrode. The first electrode is connected to one of the first photoelectric converter and the second photoelectric converter.

公开(公告)号：US20240274626A1

公开(公告)日：2024-08-15

申请号：US18625946

申请日：2024-04-03

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Masayuki TAKASE ,  Shunsuke ISONO ,  Yuuko TOMEKAWA

IPC: H01L27/146

CPC classification number: H01L27/14609 ,  H01L27/14636

Abstract: An electronic device includes: a capacitor; an insulating layer; at least one trench provided in the insulating layer; and a first conductive plug, at least part of which is surrounded by the insulating layer. The capacitor includes: a first lower electrode provided along an inner wall of the at least one trench, a dielectric layer provided on the first lower electrode, and an upper electrode provided on the dielectric layer. At least part of the first conductive plug is positioned between an upper surface of the insulating layer and a lowermost portion of the at least one trench.

公开(公告)号：US20210366960A1

公开(公告)日：2021-11-25

申请号：US17391793

申请日：2021-08-02

Applicant: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.

Inventor： Yuuko TOMEKAWA ,  Takahiro KOYANAGI ,  Takeyoshi TOKUHARA

IPC: H01L27/146 ,  H01L49/02

Abstract: A capacitor includes a first electrode, a second electrode facing the first electrode, and a dielectric layer disposed between the first and second electrodes and being in contact with each of the first and second electrodes. The dielectric layer has a thickness of 10 nm or more. The first electrode contains carbon. At the interface between the dielectric layer and the first electrode, an elemental percentage of carbon is 30 atomic % or less.

公开(公告)号：US20210273019A1

公开(公告)日：2021-09-02

申请号：US17324166

申请日：2021-05-19

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Takahiro KOYANAGI ,  Yuuko TOMEKAWA

IPC: H01L27/30 ,  H01L51/42 ,  H01L51/44

Abstract: An imaging device includes a first electrode, a second electrode, a photoelectric conversion layer that is arranged between the first electrode and the second electrode and converts light to charge, and an electron blocking layer that is arranged between the first electrode and the photoelectric conversion layer and suppresses movement of electrons from the first electrode to the photoelectric conversion layer. The electron blocking layer contains carbon and an oxide of nickel. The carbon concentration in the electron blocking layer is 0.1 atom % or more and 1.3 atom % or less.