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公开(公告)号：US20240089630A1
公开(公告)日：2024-03-14
申请号：US18516508
申请日：2023-11-21
Inventor： Yasuo MIYAKE , Yusuke OKADA , Takeyoshi TOKUHARA , Yoshiaki SATOU
IPC: H04N25/75 , H04N25/589 , H04N25/772
CPC classification number: H04N25/75 , H04N25/589 , H04N25/772
Abstract: An imaging device 100 includes a pixel array PA. A first period, a third period, and a second period appear in this order in a first frame. During the first period, pixel signal readout is performed on a first row in the pixel array PA. During the second period, pixel signal readout is performed on a second row in the pixel array PA. Each of the first period and the second period is a high-sensitivity exposure period. The third period is a low-sensitivity exposure period.
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公开(公告)号：US20210366992A1
公开(公告)日：2021-11-25
申请号：US17394091
申请日：2021-08-04
Inventor： Shunsuke ISONO , Hidenari KANEHARA , Sanshiro SHISHIDO , Takeyoshi TOKUHARA
IPC: H01L27/30 , H04N5/374 , H04N5/376 , H01L27/146
Abstract: An imaging device including: a semiconductor substrate including a pixel region and a peripheral region; an insulating layer that covers the pixel and peripheral regions; first electrodes located on the insulating layer above the pixel region; a photoelectric conversion layer that covers the first electrodes; a second electrode that covers the photoelectric conversion layer; detection circuitry configured to be electrically connected to the first electrodes; peripheral circuitry configured to be electrically connected to the detection circuitry, and including analog circuitry; and a third electrode electrically connected to the second electrode. The third electrode overlaps the analog circuitry in a plan view, and in all cross-sections perpendicular to a surface of the semiconductor substrate, parallel to the column direction or the row direction, intersecting at least one of the first electrodes, and intersecting the third electrode, no transistor of the digital circuitry is located directly below the third electrode.
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公开(公告)号：US20200295089A1
公开(公告)日：2020-09-17
申请号：US16891367
申请日：2020-06-03
Inventor： Takeyoshi TOKUHARA , Shinichi MACHIDA
Abstract: An imaging device having pixels, each pixel including: a photoelectric conversion unit including a first electrode, a second electrode, a photoelectric conversion layer between the first and second electrodes, and a hole-blocking layer between the first electrode and the photoelectric conversion layer. The photoelectric conversion unit is applied with a voltage between the first electrode and the second electrode. The photoelectric conversion unit has a characteristic, responsive to the voltage within a range from a first voltage to a second voltage, showing that a density of current passing between the first electrode and the second electrode when light is incident on the photoelectric conversion layer becomes substantially equal to that when no light is incident on the photoelectric conversion layer. The range from the first voltage to the second voltage includes 0V, and a difference between the first voltage and the second voltage is 0.5 V or more.
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公开(公告)号：US20200243609A1
公开(公告)日：2020-07-30
申请号：US16849210
申请日：2020-04-15
Inventor： Takeyoshi TOKUHARA , Tokuhiko TAMAKI
IPC: H01L27/30 , G01J5/24 , G01J1/42 , H01L51/42 , G01J5/08 , H01L51/44 , G01J1/04 , H04N5/33 , H04N5/378 , H01L51/00
Abstract: A photosensor including: a first electrode; a second electrode; a photoelectric conversion layer between the first electrode and the second electrode; a first charge blocking layer between the first electrode and the photoelectric conversion layer; a second charge blocking layer between the second electrode and the photoelectric conversion layer; a voltage supply circuit supplying a voltage to the second electrode such that an electric field directed from the second electrode toward the first electrode is generated in the photoelectric conversion layer; and a transistor. The first charge blocking layer suppresses movement of holes from the photoelectric conversion layer to the first electrode and movement of electrons from the first electrode to the photoelectric conversion layer, and the second charge blocking layer suppresses movement of electrons from the photoelectric conversion layer to the second electrode and movement of holes from the second electrode to the photoelectric conversion layer.
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5.发明申请公开(公告)号：US20200036915A1
公开(公告)日：2020-01-30
申请号：US16595292
申请日：2019-10-07
Inventor： Shinichi MACHIDA , Masashi MURAKAMI , Takeyoshi TOKUHARA , Masaaki YANAGIDA , Sanshiro SHISHIDO , Manabu NAKATA , Masumi IZUCHI
Abstract: An imaging apparatus includes a unit pixel including a pixel electrode; a counter electrode facing the pixel electrode; a photoelectric conversion layer disposed between the pixel electrode and the counter electrode; and a computing circuit that acquires a first signal upon a first voltage being applied between the pixel electrode and the counter electrode, the first signal corresponding to an image captured with visible light and infrared light and a second signal upon a second voltage being applied between the pixel electrode and the counter electrode, the second signal corresponding to an image captured with visible light, and generates a third signal by performing a computation using the first signal and the second signal, the third signal corresponding to an image captured with infrared light.
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Patent Agency Ranking
公开(公告)号：US20210329181A1
公开(公告)日：2021-10-21
申请号：US17364441
申请日：2021-06-30
Inventor： Takeyoshi TOKUHARA , Yoshiaki SATOU , Yusuke OKADA
Abstract: An imaging device includes: a photoelectric converter including a first electrode, a second electrode, and a photoelectric conversion layer that generates a signal charge; a charge accumulator connected to the first electrode to accumulate the signal charge; a first voltage supply circuit connected to the second electrode and that selectively supplies at least two different voltages including a first voltage and a third voltage greater than the first voltage; and a second voltage supply circuit that is connected to the charge accumulator via capacitance and that selectively supplies at least two different voltages including a second voltage and a fourth voltage less than the second voltage, where in a first period in which the first voltage supply circuit supplies the first voltage, the first period being included in an accumulation period for accumulating the signal charge in the charge accumulator, the second voltage supply circuit supplies the second voltage.
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公开(公告)号：US20200084404A1
公开(公告)日：2020-03-12
申请号：US16681370
申请日：2019-11-12
Inventor： Sanshiro SHISHIDO , Takeyoshi TOKUHARA , Masaaki YANAGIDA
IPC: H04N5/378 , H01L27/146 , H01L27/30 , H04N5/355
Abstract: An imaging device including an imaging cell including a photoelectric converter including a first electrode, a second electrode, and a photoelectric conversion layer between the first electrode and the second electrode, and a first transistor one of a source and a drain of which is coupled to the first electrode; and voltage supply circuitry coupled to the other of the source and the drain of the first transistor, the voltage supply circuitry being configured to supply a first voltage in a first period and a second voltage different from the first voltage in a second period different from the first period.
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公开(公告)号：US20190297260A1
公开(公告)日：2019-09-26
申请号：US16439834
申请日：2019-06-13
Inventor： Manabu NAKATA , Shinichi MACHIDA , Takeyoshi TOKUHARA , Sanshiro SHISHIDO , Masaaki YANAGIDA , Masumi IZUCHI
Abstract: A method for controlling an imaging device having a first mode to perform imaging in a first imaging wavelength band and a second mode to perform imaging in a second imaging wavelength band different from the first imaging wavelength band, and that allows switching of an operation mode from the first mode to the second mode or from the second mode to the first mode. The method including causing the imaging device to perform imaging in the first mode or the second mode; determining, with a predetermined frequency or in response to a predetermined trigger, whether to maintain a current operation mode or switch the current operation mode on the basis of first image information in the first imaging wavelength band and second image information in the second imaging wavelength band; and in accordance with the determination, selectively maintaining the current operation mode or switching the current operation mode.
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9.发明申请公开(公告)号：US20190141273A1
公开(公告)日：2019-05-09
申请号：US16241714
申请日：2019-01-07
Inventor： Shinichi MACHIDA , Takeyoshi TOKUHARA , Manabu NAKATA , Sanshiro SHISHIDO , Masaaki YANAGIDA , Masumi IZUCHI
CPC classification number: H04N5/378 , H01L27/307 , H01L51/0046 , H01L51/4246 , H04N5/374 , Y02E10/549
Abstract: An imaging apparatus includes a unit pixel including a pixel electrode, a charge accumulation region electrically connected to the pixel electrode, and a signal detection circuit electrically connected to the charge accumulation region; a counter electrode facing the pixel electrode; a photoelectric conversion layer disposed between the electrodes; and a voltage supply circuit configured to selectively apply any one of first, second, and third voltages between the electrodes. The photoelectric conversion layer exhibits first and second wavelength sensitivity characteristics in a wavelength range when the voltage supply circuit applies the first and second voltages between the electrodes, respectively, and becomes insensitive to light in the wavelength range when the voltage supply circuit applies the third voltage between the electrodes.
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公开(公告)号：US20230133421A1
公开(公告)日：2023-05-04
申请号：US18066675
申请日：2022-12-15
Inventor： Takeyoshi TOKUHARA , Sanshiro SHISHIDO , Yasuo MIYAKE , Shinichi MACHIDA
IPC: H10K39/32 , H01L27/146
Abstract: An imaging device including a semiconductor substrate including a first surface that receives light from outside, and a second surface opposite to the first surface; a first transistor located on the second surface; and a photoelectric converter that faces the second surface and that receives light transmitted through the semiconductor substrate. The semiconductor substrate is a silicon substrate or a silicon compound substrate, and the photoelectric converter includes a first electrode electrically connected to the first transistor, a second electrode, and a photoelectric conversion layer that is located between the first electrode and the second electrode and that contains a material which absorbs light having a first wavelength longer than or equal to 1.1 μm, and the material has a quantum nanostructure.
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