公开(公告)号：US20220013892A1

公开(公告)日：2022-01-13

申请号：US17429144

申请日：2020-02-06

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Takuya MINO ,  Takanori AKETA

IPC: H01Q1/38 ,  H01Q1/24 ,  H05K3/12 ,  H05K3/28 ,  H05K1/09

Abstract: The conductive device includes a substrate and an electrically conductive portion. The electrically conductive portion is provided on the substrate. The electrically conductive portion includes an electrically conductive part and a low resistance conductive layer. The electrically conductive part is provided on the substrate and includes an electrically conductive particle and an organic binder. The low resistance conductive layer covers at least part of a surface of the electrically conductive part and has lower resistivity than the electrically conductive part.

公开(公告)号：US20170294559A1

公开(公告)日：2017-10-12

申请号：US15504253

申请日：2015-11-04

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Koji GOTO ,  Shintaro HAYASHI ,  Akihiko MURAI ,  Takuya MINO ,  Saki AOKI ,  Kenji TSUBAKI

IPC: H01L33/32 ,  H01L33/64

CPC classification number: H01L33/32 ,  H01L33/38 ,  H01L33/44 ,  H01L33/641 ,  H01L33/644

Abstract: The semiconductor device includes: an AlGaN layer; a contact electrode; an insulating film; and a passivation film. The semiconductor device further includes: an extended wire extending over the contact electrode and the insulating film; and a pad electrode electrically connected to the extended wire. The passivation film covers the insulating film and the extended wire and including an opening for exposing the pad electrode. The insulating film accommodates the opening in a plan view. The passivation film accommodates the contact electrode in a plan view. The semiconductor device further includes a heat dissipation layer on a surface of the passivation film.