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公开(公告)号：US20180076355A1
公开(公告)日：2018-03-15
申请号：US15564683
申请日：2016-03-22
Inventor： Shintaro HAYASHI , Akihiko MURAI
CPC classification number: H01L33/32 , H01L24/14 , H01L33/0095 , H01L33/20 , H01L33/22 , H01L33/38 , H01L33/44 , H01L33/486 , H01L33/62 , H01L2924/01322 , H01L2933/0016 , H01L2933/0066
Abstract: An n-type nitride semiconductor layer has at least an n-type AlGaN layer. The nitride semiconductor light emitting device includes a passivation film. A negative electrode includes second contact electrodes that are each in ohmic contact with the n-type AlGaN layer, and a second pad electrode that covers the second contact electrodes and is in non-ohmic contact with the n-type AlGaN layer. A metal layer, which is in non-ohmic contact with the n-type AlGaN layer, of metal layers of the second pad electrode is made from material by which reflectivity of ultraviolet radiation emitted from a luminous layer is less than 50%.
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公开(公告)号：US20170294559A1
公开(公告)日：2017-10-12
申请号：US15504253
申请日：2015-11-04
Inventor： Koji GOTO , Shintaro HAYASHI , Akihiko MURAI , Takuya MINO , Saki AOKI , Kenji TSUBAKI
CPC classification number: H01L33/32 , H01L33/38 , H01L33/44 , H01L33/641 , H01L33/644
Abstract: The semiconductor device includes: an AlGaN layer; a contact electrode; an insulating film; and a passivation film. The semiconductor device further includes: an extended wire extending over the contact electrode and the insulating film; and a pad electrode electrically connected to the extended wire. The passivation film covers the insulating film and the extended wire and including an opening for exposing the pad electrode. The insulating film accommodates the opening in a plan view. The passivation film accommodates the contact electrode in a plan view. The semiconductor device further includes a heat dissipation layer on a surface of the passivation film.
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