公开(公告)号：US06912056B2

公开(公告)日：2005-06-28

申请号：US10914149

申请日：2004-08-10

申请人： Pil-Sik Hyun ,  Sun-Jin Kang ,  Sang-Kil Lee ,  Kyung-Ho Jung

发明人： Pil-Sik Hyun ,  Sun-Jin Kang ,  Sang-Kil Lee ,  Kyung-Ho Jung

IPC分类号： G01B11/06 ,  H01L21/66 ,  G01B11/28

CPC分类号： G01B11/0641

摘要： In an apparatus and a method of measuring a thickness of a multilayer on a substrate, a spectrum of reflected light reflected from the substrate is measured. A plurality of recipe data, each corresponding to one of a plurality of hypothetical multilayers, is stored. One of the plurality of hypothetical multilayers is initially assumed to be the multilayer actually formed on the substrate. A plurality of theoretical spectra is calculated using one of the plurality of recipe data in accordance with various theoretical thicknesses of one of the plurality of hypothetical multilayers. The measured spectrum is compared with the plurality of theoretical spectra to determine a temporary thickness of the multilayer. A reliability of the temporary thickness of the multilayer is estimated. The temporary thickness is output as a thickness of the multilayer on the substrate when the reliability of the temporary thickness is within an allowable range.

摘要翻译： 在测量基板上的多层厚度的装置和方法中，测量从基板反射的反射光的光谱。 存储多个与多个假想多层中的一个对应的食谱数据。 多个假想多层中的一个最初被假设为实际形成在基底上的多层。 根据多个假想多层之一的各种理论厚度，使用多个配方数据中的一个来计算多个理论光谱。 将测量的光谱与多个理论光谱进行比较，以确定多层的临时厚度。 估计多层的临时厚度的可靠性。 当临时厚度的可靠性在允许范围内时，临时厚度作为衬底上的多层的厚度输出。

公开(公告)号：US20050041255A1

公开(公告)日：2005-02-24

申请号：US10914149

申请日：2004-08-10

申请人： Pil-Sik Hyun ,  Sun-Jin Kang ,  Sang-Kil Lee ,  Kyung-Ho Jung

发明人： Pil-Sik Hyun ,  Sun-Jin Kang ,  Sang-Kil Lee ,  Kyung-Ho Jung

IPC分类号： G01B11/06 ,  H01L21/66 ,  G01B9/02

CPC分类号： G01B11/0641

摘要： In an apparatus and a method of measuring a thickness of a multilayer on a substrate, a spectrum of reflected light reflected from the substrate is measured. A plurality of recipe data, each corresponding to one of a plurality of hypothetical multilayers, is stored. One of the plurality of hypothetical multilayers is initially assumed to be the multilayer actually formed on the substrate. A plurality of theoretical spectra is calculated using one of the plurality of recipe data in accordance with various theoretical thicknesses of one of the plurality of hypothetical multilayers. The measured spectrum is compared with the plurality of theoretical spectra to determine a temporary thickness of the multilayer. A reliability of the temporary thickness of the multilayer is estimated. The temporary thickness is output as a thickness of the multilayer on the substrate when the reliability of the temporary thickness is within an allowable range.

公开(公告)号：US08324571B2

公开(公告)日：2012-12-04

申请号：US12713261

申请日：2010-02-26

申请人： Young-Seok Kim ,  Jong-Sun Peak ,  Young-Nam Kim ,  Hyung-Suk Cho ,  Sun-Jin Kang ,  Bu-Dl Yoo

发明人： Young-Seok Kim ,  Jong-Sun Peak ,  Young-Nam Kim ,  Hyung-Suk Cho ,  Sun-Jin Kang ,  Bu-Dl Yoo

IPC分类号： G01N23/20

CPC分类号： H01L22/20 ,  H01L22/12

摘要： An apparatus for measuring a semiconductor device is provided. The apparatus includes a beam emitter configured to irradiate an electron beam onto a sample having the entire region composed of a critical dimension (CD) region, which is formed by etching or development, and a normal region connected to the CD region, and an analyzer electrically connected to the beam emitter, and configured to select and set a wavelength range of a region in which a difference in reflectance between the CD region and the normal region occurs, after obtaining reflectance from the electron beam reflected by a surface of the sample according to the wavelength of the electron beam. A method of measuring a semiconductor device using the measuring apparatus is also provided. Therefore, it is possible to minimize a change in reflectance due to the thickness and properties of the semiconductor device, and set a wavelength range to monitor a specific wavelength, thereby accurately measuring and analyzing a CD value of a measurement part of the semiconductor device.

摘要翻译： 提供了一种用于测量半导体器件的设备。 该装置包括：射束发射器，被配置为将电子束照射到具有由蚀刻或显影形成的临界尺寸（CD）区域和连接到CD区域的法线区域构成的整个区域的样品上;以及分析器 电连接到射束发射器，并且被配置为在从由样品表面反射的电子束获得反射率之后，选择和设置发生CD区域和法线区域之间的反射率差的区域的波长范围， 到电子束的波长。 还提供了使用测量装置测量半导体器件的方法。 因此，可以使半导体器件的厚度和特性的反射率变化最小化，并且设定波长范围来监视特定波长，从而精确地测量和分析半导体器件的测量部分的CD值。