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公开(公告)号：US20160336480A1
公开(公告)日：2016-11-17
申请号：US15110991
申请日：2015-01-07
Applicant: QD LASER, INC. , UNIVERSITY OF SHEFFIELD
Inventor： Kenichi NISHI , Takeo KAGEYAMA , Keizo TAKEMASA , Mitsuru SUGAWARA , Richard HOGG , Siming CHEN
Abstract: A semiconductor light-emitting element includes: a lower clad layer 12 that is provided on a substrate 10; an active layer 20 that is provided on the lower clad layer 12 and includes a quantum well layer 24 and a plurality of quantum dots 28 sandwiching a second barrier layer 22b together with the quantum well layer 24; and an upper clad layer 14 that is provided on the active layer 20, wherein a distance D between the quantum well layer 24 and the plurality of quantum dots 28 is smaller than an average of distances X between centers of the plurality of quantum dots 28.
Abstract translation: 半导体发光元件包括：设置在基板10上的下包层12; 设置在下包层12上的有源层20，包括量子阱层24和与量子阱层24一起夹着第二阻挡层22b的多个量子点28; 以及设置在有源层20上的上覆盖层14，其中量子阱层24与多个量子点28之间的距离D小于多个量子点28的中心之间的距离X的平均值。
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公开(公告)号：US20230327406A1
公开(公告)日：2023-10-12
申请号：US18193980
申请日：2023-03-31
Applicant: DENSO CORPORATION , TOYOTA JIDOSHA KABUSHIKI KAISHA , MIRISE Technologies Corporation , QD LASER, Inc.
Inventor： Hitoshi YAMADA , Yuki KAMATA , Koichi OYAMA , Yutaka OHNISHI , Kenichi NISHI , Keizo TAKEMASA
CPC classification number: H01S5/3412 , C09K11/7492 , B82Y20/00
Abstract: In a semiconductor device, a quantum dot group includes a stack of plural quantum dot layers having different central wavelengths at which respective gains are maximum. A part of or all of the quantum dot layers are stacked so that the central wavelengths sequentially shifts along a stacking direction. The quantum dot group includes a longest wavelength layer group composed of some quantum dot layers including a longest wavelength layer having a longest central wavelength and at least one quantum dot layer stacked on the longest wavelength layer. The longest wavelength layer or the longest wavelength layer group has a larger gain at the central wavelength than the gain at the central wavelength of each of the other quantum dot layers.
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公开(公告)号：US20220158415A1
公开(公告)日：2022-05-19
申请号：US17501497
申请日：2021-10-14
Applicant: DENSO CORPORATION , TOYOTA JIDOSHA KABUSHIKI KAISHA , MIRISE Technologies Corporation , QD LASER, Inc.
Inventor： Yuki KAMATA , Hiroyuki TARUMI , Koichi OYAMA , Keizo TAKEMASA , Kenichi NISHI , Yutaka ONISHI
Abstract: The semiconductor laser device includes: an activation layer having at least one first quantum dot layer and at least one second quantum dot layer having a longer emission wavelength than the first quantum dot layer. The gain spectrum of the active layer has the maximum values at the first wavelength and the second wavelength longer than the first wavelength corresponding to the emission wavelength of the first quantum dot layer and the emission wavelength of the second quantum dot layer, respectively. The maximum value of the gain spectrum at the first wavelength is defined as the first maximum value, and the maximum value of the gain spectrum at the second wavelength is defined as the second maximum value. The first maximum value is larger than the second maximum value.
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公开(公告)号：US20220344906A1
公开(公告)日：2022-10-27
申请号：US17724570
申请日：2022-04-20
Applicant: DENSO CORPORATION , TOYOTA JIDOSHA KABUSHIKI KAISHA , MIRISE Technologies Corporation , QD LASER, Inc.
Inventor： Hiroyuki TARUMI , Yuki KAMATA , Keizo TAKEMASA , Kenichi NISHI , Yutaka OHNISHI
Abstract: An optical semiconductor device includes an active layer having a plurality of quantum dot layers. The plurality of quantum dot layers includes at least one quantum dot player doped with a p-type impurity. Further, the plurality of quantum dot layers includes at least two quantum dot layers having different emission wavelengths and different p-type impurity concentrations.
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