公开(公告)号：US20160336480A1

公开(公告)日：2016-11-17

申请号：US15110991

申请日：2015-01-07

Applicant: QD LASER, INC. ,  UNIVERSITY OF SHEFFIELD

Inventor： Kenichi NISHI ,  Takeo KAGEYAMA ,  Keizo TAKEMASA ,  Mitsuru SUGAWARA ,  Richard HOGG ,  Siming CHEN

IPC: H01L33/06 ,  H01L33/08 ,  H01L33/24 ,  H01L33/32

CPC classification number: H01L33/06 ,  H01L33/08 ,  H01L33/24 ,  H01L33/30 ,  H01L33/32

Abstract: A semiconductor light-emitting element includes: a lower clad layer 12 that is provided on a substrate 10; an active layer 20 that is provided on the lower clad layer 12 and includes a quantum well layer 24 and a plurality of quantum dots 28 sandwiching a second barrier layer 22b together with the quantum well layer 24; and an upper clad layer 14 that is provided on the active layer 20, wherein a distance D between the quantum well layer 24 and the plurality of quantum dots 28 is smaller than an average of distances X between centers of the plurality of quantum dots 28.

Abstract translation: 半导体发光元件包括：设置在基板10上的下包层12; 设置在下包层12上的有源层20，包括量子阱层24和与量子阱层24一起夹着第二阻挡层22b的多个量子点28; 以及设置在有源层20上的上覆盖层14，其中量子阱层24与多个量子点28之间的距离D小于多个量子点28的中心之间的距离X的平均值。