公开(公告)号：US20230090181A1

公开(公告)日：2023-03-23

申请号：US17483325

申请日：2021-09-23

Applicant: QUALCOMM Incorporated

Inventor： Yue Li ,  Durodami Lisk ,  Jinying Sun

IPC: H01L23/00 ,  H01L25/065

Abstract: A semiconductor die (“die”) employing repurposed seed layer for forming additional signal paths to a back end-of-line (BEOL) structure of the die, and related integrated circuit (IC) packages and fabrication methods. A seed layer is repurposed that was disposed adjacent the BEOL interconnect structure to couple an under bump metallization (UBM) interconnect without a coupled interconnect bump thus forming an unraised interconnect bump, to a UBM interconnect that has a raised interconnect bump. To couple the unraised interconnect bump to the raised interconnect bump, the seed layer is selectively removed during fabrication to leave a portion of the seed layer repurposed that couples the UBM interconnect that does not have an interconnect bump to the UBM interconnect that has a raised interconnect bump. Additional routing paths can be provided between raised interconnect bumps to the BEOL interconnect structure through coupling of UBM interconnects to an unraised interconnect bump.

公开(公告)号：US11817406B2

公开(公告)日：2023-11-14

申请号：US17483325

申请日：2021-09-23

Applicant: QUALCOMM Incorporated

Inventor： Yue Li ,  Durodami Lisk ,  Jinying Sun

IPC: H01L25/065 ,  H01L23/00

CPC classification number: H01L24/05 ,  H01L24/03 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L25/0655 ,  H01L25/0657 ,  H01L2224/0231 ,  H01L2224/02331 ,  H01L2224/0401 ,  H01L2224/05082 ,  H01L2224/16146 ,  H01L2224/16227 ,  H01L2225/0652 ,  H01L2225/06517

Abstract: A semiconductor die (“die”) employing repurposed seed layer for forming additional signal paths to a back end-of-line (BEOL) structure of the die, and related integrated circuit (IC) packages and fabrication methods. A seed layer is repurposed that was disposed adjacent the BEOL interconnect structure to couple an under bump metallization (UBM) interconnect without a coupled interconnect bump thus forming an unraised interconnect bump, to a UBM interconnect that has a raised interconnect bump. To couple the unraised interconnect bump to the raised interconnect bump, the seed layer is selectively removed during fabrication to leave a portion of the seed layer repurposed that couples the UBM interconnect that does not have an interconnect bump to the UBM interconnect that has a raised interconnect bump. Additional routing paths can be provided between raised interconnect bumps to the BEOL interconnect structure through coupling of UBM interconnects to an unraised interconnect bump.