公开(公告)号：US10037925B2

公开(公告)日：2018-07-31

申请号：US15357465

申请日：2016-11-21

申请人： Qorvo US, Inc.

发明人： Alexandre Christian Volatier ,  Guillermo Moreno Granado

IPC分类号： H01L21/66 ,  H01L23/00 ,  H01L23/544 ,  H01L21/78

CPC分类号： H01L22/14 ,  H01L21/78 ,  H01L22/20 ,  H01L22/32 ,  H01L23/544 ,  H01L24/09 ,  H01L24/17 ,  H01L24/81 ,  H01L2224/17104 ,  H01L2224/175 ,  H01L2224/81001 ,  H01L2224/81052 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01079

摘要： Methods of fabricating semiconductor devices and Radio Frequency (RF) components are provided. The method includes providing a circuit layout on a semiconductor layer and providing one or more sacrificial connections to connect bump pads in the circuit layout. The method also includes testing the circuit layout using the one or more sacrificial connections and removing at least a portion of the one or more sacrificial connections. In this way, the performance of the semiconductor device is improved by reducing or avoiding capacitive or inductive leakage paths that can be caused by leftover materials.

公开(公告)号：US10217677B2

公开(公告)日：2019-02-26

申请号：US15953581

申请日：2018-04-16

申请人： Qorvo US, Inc.

发明人： Alexandre Christian Volatier ,  Guillermo Moreno Granado

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H01L21/66 ,  H01L23/00 ,  H01L23/544 ,  H01L21/78

摘要： Methods of fabricating semiconductor devices and Radio Frequency (RF) components are provided. The method includes providing a circuit layout on a semiconductor layer and providing one or more sacrificial connections to connect bump pads in the circuit layout. The method also includes testing the circuit layout using the one or more sacrificial connections and removing at least a portion of the one or more sacrificial connections. In this way, the performance of the semiconductor device is improved by reducing or avoiding capacitive or inductive leakage paths that can be caused by leftover materials.

公开(公告)号：US20180240719A1

公开(公告)日：2018-08-23

申请号：US15953581

申请日：2018-04-16

申请人： Qorvo US, Inc.

发明人： Alexandre Christian Volatier ,  Guillermo Moreno Granado

IPC分类号： H01L21/66 ,  H01L21/78 ,  H01L23/00 ,  H01L23/544

CPC分类号： H01L22/14 ,  H01L21/78 ,  H01L22/20 ,  H01L22/32 ,  H01L23/544 ,  H01L24/09 ,  H01L24/17 ,  H01L24/81 ,  H01L2224/17104 ,  H01L2224/175 ,  H01L2224/81001 ,  H01L2224/81052 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01079

摘要： Methods of fabricating semiconductor devices and Radio Frequency (RF) components are provided. The method includes providing a circuit layout on a semiconductor layer and providing one or more sacrificial connections to connect bump pads in the circuit layout. The method also includes testing the circuit layout using the one or more sacrificial connections and removing at least a portion of the one or more sacrificial connections. In this way, the performance of the semiconductor device is improved by reducing or avoiding capacitive or inductive leakage paths that can be caused by leftover materials.

公开(公告)号：US20170256467A1

公开(公告)日：2017-09-07

申请号：US15357465

申请日：2016-11-21

申请人： Qorvo US, Inc.

发明人： Alexandre Christian Volatier ,  Guillermo Moreno Granado

IPC分类号： H01L21/66 ,  H01L23/544 ,  H01L21/78 ,  H01L23/00

CPC分类号： H01L22/14 ,  H01L21/78 ,  H01L22/20 ,  H01L22/32 ,  H01L23/544 ,  H01L24/09 ,  H01L24/17 ,  H01L24/81 ,  H01L2224/17104 ,  H01L2224/175 ,  H01L2224/81001 ,  H01L2224/81052 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01079

摘要： Methods of fabricating semiconductor devices and Radio Frequency (RF) components are provided. The method includes providing a circuit layout on a semiconductor layer and providing one or more sacrificial connections to connect bump pads in the circuit layout. The method also includes testing the circuit layout using the one or more sacrificial connections and removing at least a portion of the one or more sacrificial connections. In this way, the performance of the semiconductor device is improved by reducing or avoiding capacitive or inductive leakage paths that can be caused by leftover materials.