公开(公告)号：US10083928B2

公开(公告)日：2018-09-25

申请号：US15419934

申请日：2017-01-30

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Jing-Cheng Lin

IPC分类号： H01L23/48 ,  H01L23/00 ,  H01L25/065 ,  H01L25/00

CPC分类号： H01L24/17 ,  H01L23/3192 ,  H01L24/02 ,  H01L24/03 ,  H01L24/05 ,  H01L24/10 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/023 ,  H01L2224/0345 ,  H01L2224/03452 ,  H01L2224/03462 ,  H01L2224/0401 ,  H01L2224/05018 ,  H01L2224/05082 ,  H01L2224/05558 ,  H01L2224/05572 ,  H01L2224/11 ,  H01L2224/1145 ,  H01L2224/1146 ,  H01L2224/11462 ,  H01L2224/116 ,  H01L2224/13 ,  H01L2224/13022 ,  H01L2224/13023 ,  H01L2224/13024 ,  H01L2224/1308 ,  H01L2224/13082 ,  H01L2224/13083 ,  H01L2224/13084 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13164 ,  H01L2224/13169 ,  H01L2224/13655 ,  H01L2224/1601 ,  H01L2224/16058 ,  H01L2224/16145 ,  H01L2224/16148 ,  H01L2224/16238 ,  H01L2224/16503 ,  H01L2224/175 ,  H01L2224/81193 ,  H01L2224/81815 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2924/0105 ,  H01L2924/0132 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/01047 ,  H01L2924/01029 ,  H01L2924/00

摘要： A structure comprises a first semiconductor chip with a first metal bump and a second semiconductor chip with a second metal bump. The structure further comprises a solder joint structure electrically connecting the first semiconductor chip and the second semiconductor chip, wherein the solder joint structure comprises an intermetallic compound region between the first metal bump and the second metal bump, wherein the intermetallic compound region is with a first height dimension and a surrounding portion formed along exterior walls of the first metal bump and the second metal bump, wherein the surrounding portion is with a second height dimension, and wherein the second height dimension is greater than the first height dimension.

公开(公告)号：US09698088B2

公开(公告)日：2017-07-04

申请号：US15135364

申请日：2016-04-21

申请人： Samsung Electronics Co., Ltd.

发明人： Heungkyu Kwon ,  Kang Joon Lee ,  JaeWook Yoo ,  Su-Chang Lee

IPC分类号： H01L23/498 ,  H01L23/488 ,  H01L23/16 ,  H01L23/18 ,  H01L25/065 ,  H01L25/10 ,  H01L23/00 ,  H01L23/31 ,  H01L23/13

CPC分类号： H01L23/49811 ,  H01L23/13 ,  H01L23/16 ,  H01L23/18 ,  H01L23/3157 ,  H01L23/488 ,  H01L23/49816 ,  H01L23/49838 ,  H01L24/13 ,  H01L24/14 ,  H01L24/16 ,  H01L24/17 ,  H01L24/73 ,  H01L25/0652 ,  H01L25/0657 ,  H01L25/105 ,  H01L2224/0401 ,  H01L2224/0557 ,  H01L2224/13025 ,  H01L2224/131 ,  H01L2224/1319 ,  H01L2224/13541 ,  H01L2224/13561 ,  H01L2224/13583 ,  H01L2224/13609 ,  H01L2224/13611 ,  H01L2224/13616 ,  H01L2224/13624 ,  H01L2224/13639 ,  H01L2224/13644 ,  H01L2224/13647 ,  H01L2224/13649 ,  H01L2224/13655 ,  H01L2224/13657 ,  H01L2224/1366 ,  H01L2224/13664 ,  H01L2224/13666 ,  H01L2224/13669 ,  H01L2224/1367 ,  H01L2224/13671 ,  H01L2224/13672 ,  H01L2224/13679 ,  H01L2224/1368 ,  H01L2224/13681 ,  H01L2224/13684 ,  H01L2224/1401 ,  H01L2224/1403 ,  H01L2224/14135 ,  H01L2224/14136 ,  H01L2224/14181 ,  H01L2224/14505 ,  H01L2224/16146 ,  H01L2224/16225 ,  H01L2224/1703 ,  H01L2224/1712 ,  H01L2224/17181 ,  H01L2224/175 ,  H01L2224/1751 ,  H01L2224/2919 ,  H01L2224/32225 ,  H01L2224/48227 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06555 ,  H01L2225/06565 ,  H01L2225/1023 ,  H01L2225/1058 ,  H01L2225/1082 ,  H01L2924/00014 ,  H01L2924/15153 ,  H01L2924/15156 ,  H01L2924/15311 ,  H01L2924/15321 ,  H01L2924/15787 ,  H01L2924/18161 ,  H01L2924/3511 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2924/0665 ,  H01L2924/206 ,  H01L2924/014 ,  H01L2224/05552

摘要： Semiconductor packages include a first substrate including a central portion and a peripheral portion, at least one first central connection member attached to the central portion of the first substrate, and at least one first peripheral connection member attached to the peripheral portion of the first substrate. The first central connection member includes a first supporter and a first fusion conductive layer surrounding the first supporter.

公开(公告)号：US08796849B2

公开(公告)日：2014-08-05

申请号：US13656968

申请日：2012-10-22

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Jing-Cheng Lin

IPC分类号： H01L23/48 ,  H01L23/52

CPC分类号： H01L24/17 ,  H01L23/3192 ,  H01L24/02 ,  H01L24/03 ,  H01L24/05 ,  H01L24/10 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/023 ,  H01L2224/0345 ,  H01L2224/03452 ,  H01L2224/03462 ,  H01L2224/0401 ,  H01L2224/05018 ,  H01L2224/05082 ,  H01L2224/05558 ,  H01L2224/05572 ,  H01L2224/11 ,  H01L2224/1145 ,  H01L2224/1146 ,  H01L2224/11462 ,  H01L2224/116 ,  H01L2224/13 ,  H01L2224/13022 ,  H01L2224/13023 ,  H01L2224/13024 ,  H01L2224/1308 ,  H01L2224/13082 ,  H01L2224/13083 ,  H01L2224/13084 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13164 ,  H01L2224/13169 ,  H01L2224/13655 ,  H01L2224/1601 ,  H01L2224/16058 ,  H01L2224/16145 ,  H01L2224/16148 ,  H01L2224/16238 ,  H01L2224/16503 ,  H01L2224/175 ,  H01L2224/81193 ,  H01L2224/81815 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2924/0105 ,  H01L2924/0132 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/01047 ,  H01L2924/01029 ,  H01L2924/00

摘要： A structure comprises a first semiconductor chip with a first metal bump and a second semiconductor chip with a second metal bump. The structure further comprises a solder joint structure electrically connecting the first semiconductor chip and the second semiconductor chip, wherein the solder joint structure comprises an intermetallic compound region between the first metal bump and the second metal bump, wherein the intermetallic compound region is with a first height dimension and a surrounding portion formed along exterior walls of the first metal bump and the second metal bump, wherein the surrounding portion is with a second height dimension, and wherein the second height dimension is greater than the first height dimension.

摘要翻译： 一种结构包括具有第一金属凸块的第一半导体芯片和具有第二金属凸块的第二半导体芯片。 所述结构还包括电连接所述第一半导体芯片和所述第二半导体芯片的焊接结构，其中所述焊点结构包括在所述第一金属凸块和所述第二金属凸块之间的金属间化合物区域，其中所述金属间化合物区域具有第一 高度尺寸和沿着第一金属凸块和第二金属凸块的外壁形成的周围部分，其中周围部分具有第二高度尺寸，并且其中第二高度尺寸大于第一高度尺寸。

公开(公告)号：US12040309B2

公开(公告)日：2024-07-16

申请号：US17815713

申请日：2022-07-28

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Wei-Yu Chen ,  Chia-Shen Cheng ,  Hao-Jan Pei ,  Philip Yu-Shuan Chung ,  Kuei-Wei Huang ,  Yu-Peng Tsai ,  Hsiu-Jen Lin ,  Ching-Hua Hsieh ,  Chen-Hua Yu ,  Chung-Shi Liu

IPC分类号： H01L23/00 ,  H01L21/56 ,  H01L23/31 ,  H01L23/498

CPC分类号： H01L24/81 ,  H01L21/56 ,  H01L23/3114 ,  H01L23/49822 ,  H01L24/17 ,  H01L2224/175 ,  H01L2224/81224 ,  H01L2924/3511

摘要： A method includes performing a first laser shot on a first portion of a top surface of a first package component. The first package component is over a second package component, and a first solder region between the first package component and the second package component is reflowed by the first laser shot. After the first laser shot, a second laser shot is performed on a second portion of the top surface of the first package component. A second solder region between the first package component and the second package component is reflowed by the second laser shot.

公开(公告)号：US20180108634A1

公开(公告)日：2018-04-19

申请号：US15294594

申请日：2016-10-14

申请人： Advanced Semiconductor Engineering, Inc.

发明人： Wen-Long LU ,  Yuan-Feng Chiang ,  Chi-Chang Lee ,  Chung-Hsi Wu

IPC分类号： H01L23/00 ,  H01L23/498

CPC分类号： H01L24/17 ,  H01L23/49811 ,  H01L23/49827 ,  H01L24/33 ,  H01L2224/1705 ,  H01L2224/175 ,  H01L2224/33104 ,  H01L2224/335

摘要： A semiconductor package includes a first semiconductor device and a second semiconductor device. The first semiconductor device includes a first main body, at least one first columnar portion and at least one first conductive layer. The first columnar portion protrudes from a bottom surface of the first main body. The first conductive layer is disposed on a side surface of the first columnar portion. The second semiconductor device includes a second main body, at least one second columnar portion and at least one second conductive layer. The second columnar portion protrudes from a top surface of the second main body. The second conductive layer is disposed on a side surface of the second columnar portion. The first conductive layer is electrically coupled to the second conductive layer.

公开(公告)号：US20160240509A1

公开(公告)日：2016-08-18

申请号：US15135364

申请日：2016-04-21

申请人： Samsung Electronics Co., Ltd.

发明人： Heungkyu KWON ,  Kang Joon LEE ,  JaeWook YOO ,  Su-Chang LEE

IPC分类号： H01L25/065 ,  H01L23/31 ,  H01L23/00

CPC分类号： H01L23/49811 ,  H01L23/13 ,  H01L23/16 ,  H01L23/18 ,  H01L23/3157 ,  H01L23/488 ,  H01L23/49816 ,  H01L23/49838 ,  H01L24/13 ,  H01L24/14 ,  H01L24/16 ,  H01L24/17 ,  H01L24/73 ,  H01L25/0652 ,  H01L25/0657 ,  H01L25/105 ,  H01L2224/0401 ,  H01L2224/0557 ,  H01L2224/13025 ,  H01L2224/131 ,  H01L2224/1319 ,  H01L2224/13541 ,  H01L2224/13561 ,  H01L2224/13583 ,  H01L2224/13609 ,  H01L2224/13611 ,  H01L2224/13616 ,  H01L2224/13624 ,  H01L2224/13639 ,  H01L2224/13644 ,  H01L2224/13647 ,  H01L2224/13649 ,  H01L2224/13655 ,  H01L2224/13657 ,  H01L2224/1366 ,  H01L2224/13664 ,  H01L2224/13666 ,  H01L2224/13669 ,  H01L2224/1367 ,  H01L2224/13671 ,  H01L2224/13672 ,  H01L2224/13679 ,  H01L2224/1368 ,  H01L2224/13681 ,  H01L2224/13684 ,  H01L2224/1401 ,  H01L2224/1403 ,  H01L2224/14135 ,  H01L2224/14136 ,  H01L2224/14181 ,  H01L2224/14505 ,  H01L2224/16146 ,  H01L2224/16225 ,  H01L2224/1703 ,  H01L2224/1712 ,  H01L2224/17181 ,  H01L2224/175 ,  H01L2224/1751 ,  H01L2224/2919 ,  H01L2224/32225 ,  H01L2224/48227 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06555 ,  H01L2225/06565 ,  H01L2225/1023 ,  H01L2225/1058 ,  H01L2225/1082 ,  H01L2924/00014 ,  H01L2924/15153 ,  H01L2924/15156 ,  H01L2924/15311 ,  H01L2924/15321 ,  H01L2924/15787 ,  H01L2924/18161 ,  H01L2924/3511 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2924/0665 ,  H01L2924/206 ,  H01L2924/014 ,  H01L2224/05552

摘要： Semiconductor packages include a first substrate including a central portion and a peripheral portion, at least one first central connection member attached to the central portion of the first substrate, and at least one first peripheral connection member attached to the peripheral portion of the first substrate. The first central connection member includes a first supporter and a first fusion conductive layer surrounding the first supporter.

摘要翻译： 半导体封装包括包括中心部分和周边部分的第一基板，附接到第一基板的中心部分的至少一个第一中心连接部件和附接到第一基板的周边部分的至少一个第一周边连接部件。 第一中心连接构件包括第一支撑件和围绕第一支撑件的第一融合导电层。

公开(公告)号：US20150325547A1

公开(公告)日：2015-11-12

申请号：US14803950

申请日：2015-07-20

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Jing-Cheng Lin

IPC分类号： H01L23/00 ,  H01L25/00 ,  H01L25/065

CPC分类号： H01L24/17 ,  H01L23/3192 ,  H01L24/02 ,  H01L24/03 ,  H01L24/05 ,  H01L24/10 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/023 ,  H01L2224/0345 ,  H01L2224/03452 ,  H01L2224/03462 ,  H01L2224/0401 ,  H01L2224/05018 ,  H01L2224/05082 ,  H01L2224/05558 ,  H01L2224/05572 ,  H01L2224/11 ,  H01L2224/1145 ,  H01L2224/1146 ,  H01L2224/11462 ,  H01L2224/116 ,  H01L2224/13 ,  H01L2224/13022 ,  H01L2224/13023 ,  H01L2224/13024 ,  H01L2224/1308 ,  H01L2224/13082 ,  H01L2224/13083 ,  H01L2224/13084 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13164 ,  H01L2224/13169 ,  H01L2224/13655 ,  H01L2224/1601 ,  H01L2224/16058 ,  H01L2224/16145 ,  H01L2224/16148 ,  H01L2224/16238 ,  H01L2224/16503 ,  H01L2224/175 ,  H01L2224/81193 ,  H01L2224/81815 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2924/0105 ,  H01L2924/0132 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/01047 ,  H01L2924/01029 ,  H01L2924/00

摘要： A structure comprises a first semiconductor chip with a first metal bump and a second semiconductor chip with a second metal bump. The structure further comprises a solder joint structure electrically connecting the first semiconductor chip and the second semiconductor chip, wherein the solder joint structure comprises an intermetallic compound region between the first metal bump and the second metal bump, wherein the intermetallic compound region is with a first height dimension and a surrounding portion formed along exterior walls of the first metal bump and the second metal bump, wherein the surrounding portion is with a second height dimension, and wherein the second height dimension is greater than the first height dimension.

摘要翻译： 一种结构包括具有第一金属凸块的第一半导体芯片和具有第二金属凸块的第二半导体芯片。 所述结构还包括电连接所述第一半导体芯片和所述第二半导体芯片的焊接结构，其中所述焊点结构包括在所述第一金属凸块和所述第二金属凸块之间的金属间化合物区域，其中所述金属间化合物区域具有第一 高度尺寸和沿着第一金属凸块和第二金属凸块的外壁形成的周围部分，其中周围部分具有第二高度尺寸，并且其中第二高度尺寸大于第一高度尺寸。

公开(公告)号：US20140322863A1

公开(公告)日：2014-10-30

申请号：US14327899

申请日：2014-07-10

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Jing-Cheng Lin

IPC分类号： H01L23/00

CPC分类号： H01L24/17 ,  H01L23/3192 ,  H01L24/02 ,  H01L24/03 ,  H01L24/05 ,  H01L24/10 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/023 ,  H01L2224/0345 ,  H01L2224/03452 ,  H01L2224/03462 ,  H01L2224/0401 ,  H01L2224/05018 ,  H01L2224/05082 ,  H01L2224/05558 ,  H01L2224/05572 ,  H01L2224/11 ,  H01L2224/1145 ,  H01L2224/1146 ,  H01L2224/11462 ,  H01L2224/116 ,  H01L2224/13 ,  H01L2224/13022 ,  H01L2224/13023 ,  H01L2224/13024 ,  H01L2224/1308 ,  H01L2224/13082 ,  H01L2224/13083 ,  H01L2224/13084 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13164 ,  H01L2224/13169 ,  H01L2224/13655 ,  H01L2224/1601 ,  H01L2224/16058 ,  H01L2224/16145 ,  H01L2224/16148 ,  H01L2224/16238 ,  H01L2224/16503 ,  H01L2224/175 ,  H01L2224/81193 ,  H01L2224/81815 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2924/0105 ,  H01L2924/0132 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/01047 ,  H01L2924/01029 ,  H01L2924/00

摘要： A structure comprises a first semiconductor chip with a first metal bump and a second semiconductor chip with a second metal bump. The structure further comprises a solder joint structure electrically connecting the first semiconductor chip and the second semiconductor chip, wherein the solder joint structure comprises an intermetallic compound region between the first metal bump and the second metal bump, wherein the intermetallic compound region is with a first height dimension and a surrounding portion formed along exterior walls of the first metal bump and the second metal bump, wherein the surrounding portion is with a second height dimension, and wherein the second height dimension is greater than the first height dimension.

摘要翻译： 一种结构包括具有第一金属凸块的第一半导体芯片和具有第二金属凸块的第二半导体芯片。 所述结构还包括电连接所述第一半导体芯片和所述第二半导体芯片的焊接结构，其中所述焊点结构包括在所述第一金属凸块和所述第二金属凸块之间的金属间化合物区域，其中所述金属间化合物区域具有第一 高度尺寸和沿着第一金属凸块和第二金属凸块的外壁形成的周围部分，其中周围部分具有第二高度尺寸，并且其中第二高度尺寸大于第一高度尺寸。

公开(公告)号：US20190237391A1

公开(公告)日：2019-08-01

申请号：US16329170

申请日：2016-10-27

申请人： Intel Corporation

发明人： Seshu V. SATTIRAJU ,  Krishna Prakash GANESAN ,  Ashish BHATIA ,  Vinay SRIRAM ,  John MUIRHEAD ,  Hiten KOTHARI ,  Aloysius A. GUNAWAN ,  Lavanya ARYASOMAYAJULA ,  Shravan GOWRISHANKAR ,  Sriram PATTABHIRAMAN ,  Sudipto GUHA

IPC分类号： H01L23/48 ,  H01L21/768 ,  H01L25/18 ,  H01L23/00 ,  H01L23/522 ,  H01L23/528 ,  H01L21/822

CPC分类号： H01L23/481 ,  H01L21/48 ,  H01L21/76876 ,  H01L21/76898 ,  H01L21/8221 ,  H01L23/00 ,  H01L23/48 ,  H01L23/5226 ,  H01L23/5283 ,  H01L24/05 ,  H01L24/06 ,  H01L24/13 ,  H01L24/14 ,  H01L24/16 ,  H01L24/32 ,  H01L24/73 ,  H01L24/81 ,  H01L25/18 ,  H01L2224/0231 ,  H01L2224/02372 ,  H01L2224/02373 ,  H01L2224/02375 ,  H01L2224/02379 ,  H01L2224/02381 ,  H01L2224/0345 ,  H01L2224/03452 ,  H01L2224/03464 ,  H01L2224/0347 ,  H01L2224/0401 ,  H01L2224/05007 ,  H01L2224/05024 ,  H01L2224/05027 ,  H01L2224/05082 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05562 ,  H01L2224/05568 ,  H01L2224/05644 ,  H01L2224/05657 ,  H01L2224/06153 ,  H01L2224/06155 ,  H01L2224/06181 ,  H01L2224/13006 ,  H01L2224/13022 ,  H01L2224/13111 ,  H01L2224/16148 ,  H01L2224/16238 ,  H01L2224/17181 ,  H01L2224/175 ,  H01L2224/335 ,  H01L2224/73203 ,  H01L2224/73204 ,  H01L2924/00014 ,  H01L2924/013 ,  H01L2924/01047 ,  H01L2924/01029 ,  H01L2924/014

摘要： A stacked-chip assembly including a plurality of IC chips or die that are stacked, and electrically coupled by solder bonds. In accordance with some embodiments described further below, the solder bonds are to contact a back-side land that includes a diffusion barrier to reduce intermetallic formation and/or other solder-induced reliability issues. The back-side land may include an electrolytic nickel (Ni) barrier layer separating solder from a back-side redistribution layer trace. This electrolytic Ni may be of high purity, which at least in part, may enable the backside metallization stack to be of minimal thickness while still functioning as a diffusion barrier. In some embodiments, the back-side land composition and architecture is distinct from a front-side land composition and/or architecture.

公开(公告)号：US09947635B1

公开(公告)日：2018-04-17

申请号：US15294594

申请日：2016-10-14

申请人： Advanced Semiconductor Engineering, Inc.

发明人： Wen-Long Lu ,  Yuan-Feng Chiang ,  Chi-Chang Lee ,  Chung-Hsi Wu

IPC分类号： H01L23/02 ,  H01L23/00 ,  H01L23/498

CPC分类号： H01L24/17 ,  H01L23/49811 ,  H01L23/49827 ,  H01L24/33 ,  H01L2224/1705 ,  H01L2224/175 ,  H01L2224/33104 ,  H01L2224/335

摘要： A semiconductor package includes a first semiconductor device and a second semiconductor device. The first semiconductor device includes a first main body, at least one first columnar portion and at least one first conductive layer. The first columnar portion protrudes from a bottom surface of the first main body. The first conductive layer is disposed on a side surface of the first columnar portion. The second semiconductor device includes a second main body, at least one second columnar portion and at least one second conductive layer. The second columnar portion protrudes from a top surface of the second main body. The second conductive layer is disposed on a side surface of the second columnar portion. The first conductive layer is electrically coupled to the second conductive layer.