公开(公告)号：US20040069747A1

公开(公告)日：2004-04-15

申请号：US10269149

申请日：2002-10-11

Applicant: REFLECTIVITY, INC., a California corporation

Inventor： Satyadev R. Patel ,  Gregory P. Schaadt ,  Douglas B. MacDonald ,  Niles K. MacDonald ,  Hongqin Shi

IPC: G01L021/30 ,  G01R031/00

CPC classification number: H01J37/32963 ,  B81C1/00476 ,  B81C1/00587 ,  B81C99/0065 ,  B81C2201/0132 ,  B81C2201/0138 ,  H01J37/32449 ,  H01J37/32935

Abstract: Processes for the removal of a layer or region from a workpiece material by contact with a process gas in the manufacture of a microstructure are enhanced by the ability to accurately determine the endpoint of the removal step. A vapor phase etchant is used to remove a material that has been deposited on a substrate, with or without other deposited structure thereon. By creating an impedance at the exit of an etching chamber (or downstream thereof), as the vapor phase etchant passes from the etching chamber, a gaseous product of the etching reaction is monitored, and the endpoint of the removal process can be determined. The vapor phase etching process can be flow through, a combination of flow through and pulse, or recirculated back to the etching chamber

Abstract translation: 通过与制造微结构中的工艺气体接触从工件材料去除层或区域的工艺通过精确地确定去除步骤的终点的能力增强。 气相蚀刻剂用于去除已经沉积在基底上的材料，其上具有或不具有其它沉积结构。 通过在蚀刻室（或其下游）的出口处产生阻抗，当气相蚀刻剂从蚀刻室通过时，监测蚀刻反应的气态产物，并且可以确定去除过程的终点。 气相蚀刻工艺可以流过，流过和脉冲的组合，或再循环回蚀刻室