公开(公告)号：US10763214B2

公开(公告)日：2020-09-01

申请号：US16405644

申请日：2019-05-07

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Shuuichi Kariyazaki ,  Kazuyuki Nakagawa ,  Keita Tsuchiya ,  Yosuke Katsura ,  Shinji Katayama ,  Norio Chujo ,  Masayoshi Yagyu ,  Yutaka Uematsu

IPC: H01L23/538 ,  H01L23/66 ,  H01L23/498 ,  H05K1/02 ,  H04L25/02

Abstract: Performance of a semiconductor device is improved. The semiconductor device includes a semiconductor chip and a chip component that are electrically connected to each other via a wiring substrate. The semiconductor chip includes an input/output circuit and an electrode pad electrically connected to the input/output circuit and transmitting the signal. The chip component includes a plurality of types of passive elements and includes an equalizer circuit for correcting signal waveforms of the signal, and electrodes electrically connected to the equalizer circuit. The path length from the signal electrode of the semiconductor chip to the electrode of the chip component is 1/16 or more and 3.5/16 or less with respect to the wavelength of the signal.