公开(公告)号：US20180374844A1

公开(公告)日：2018-12-27

申请号：US16105518

申请日：2018-08-20

Applicant: ROHM CO., LTD.

Inventor： Kenji NISHIDA ,  Shinpei OHNISHI ,  Kentaro NASU

IPC: H01L27/06 ,  H01L29/866 ,  H01L29/78 ,  H01L29/739 ,  H01L29/06 ,  H01L29/423 ,  H01L29/66 ,  H01L29/20 ,  H01L29/40 ,  H01L29/16

CPC classification number: H01L27/0635 ,  H01L27/0629 ,  H01L29/0615 ,  H01L29/0623 ,  H01L29/0646 ,  H01L29/0649 ,  H01L29/0692 ,  H01L29/16 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/407 ,  H01L29/423 ,  H01L29/42368 ,  H01L29/66106 ,  H01L29/66712 ,  H01L29/7397 ,  H01L29/7808 ,  H01L29/7813 ,  H01L29/866

Abstract: A semiconductor device, including a semiconductor layer of a first conductivity type, having a main surface with a diode trench formed therein, an inner wall insulating film, including a side wall insulating film, formed along side walls of the diode trench, and a bottom wall insulating film, formed along a bottom wall of the diode trench and having a thickness greater than a thickness of the side wall insulating film, and a bidirectional Zener diode, formed on the bottom wall insulating film inside the diode trench and having a pair of first conductivity type portions and at least one second conductivity type portion formed between the pair of first conductivity type portions.

公开(公告)号：US20230112583A1

公开(公告)日：2023-04-13

申请号：US18065997

申请日：2022-12-14

Applicant: ROHM CO., LTD.

Inventor： Kentaro NASU ,  Kenji NISHIDA

IPC: H01L27/088 ,  H01L23/522 ,  H01L27/02 ,  H01L29/78 ,  H01L29/06 ,  H01L29/423 ,  H01L27/06

Abstract: A semiconductor device includes an enhancement-mode first p-channel MISFET, an enhancement-mode second p-channel MISFET, a drain conductor electrically and commonly connected to the first p-channel MISFET and the second p-channel MISFET, a first source conductor electrically connected to a source of the first p-channel MISFET, a second source conductor electrically connected to a source of the second p-channel MISFET, and a gate conductor electrically and commonly connected to a gate of the first p-channel MISFET and a gate of the second p-channel MISFET.

公开(公告)号：US20180096991A1

公开(公告)日：2018-04-05

申请号：US15713015

申请日：2017-09-22

Applicant: ROHM CO., LTD.

Inventor： Kentaro NASU ,  Kenji NISHIDA

IPC: H01L27/088 ,  H01L23/522 ,  H01L29/423 ,  H01L29/78 ,  H01L29/06 ,  H01L27/02

Abstract: A semiconductor device includes an enhancement-mode first p-channel MISFET, an enhancement-mode second p-channel MISFET, a drain conductor electrically and commonly connected to the first p-channel MISFET and the second p-channel MISFET, a first source conductor electrically connected to a source of the first p-channel MISFET, a second source conductor electrically connected to a source of the second p-channel MISFET, and a gate conductor electrically and commonly connected to a gate of the first p-channel MISFET and a gate of the second p-channel MISFET.

公开(公告)号：US20170256536A1

公开(公告)日：2017-09-07

申请号：US15449479

申请日：2017-03-03

Applicant: ROHM CO., LTD.

Inventor： Kenji NISHIDA ,  Shinpei OHNISHI ,  Kentaro NASU

IPC: H01L27/06 ,  H01L29/06 ,  H01L29/423 ,  H01L29/866 ,  H01L29/739

CPC classification number: H01L27/0635 ,  H01L27/0629 ,  H01L29/0615 ,  H01L29/0623 ,  H01L29/0646 ,  H01L29/0649 ,  H01L29/0692 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/407 ,  H01L29/423 ,  H01L29/42368 ,  H01L29/66106 ,  H01L29/66712 ,  H01L29/7397 ,  H01L29/7808 ,  H01L29/7813 ,  H01L29/866

Abstract: A semiconductor device, including a semiconductor layer of a first conductivity type, having a main surface with a diode trench formed therein, an inner wall insulating film, including a side wall insulating film, formed along side walls of the diode trench, and a bottom wall insulating film, formed along a bottom wall of the diode trench and having a thickness greater than a thickness of the side wall insulating film, and a bidirectional Zener diode, formed on the bottom wall insulating film inside the diode trench and having a pair of first conductivity type portions and at least one second conductivity type portion formed between the pair of first conductivity type portions.

公开(公告)号：US20200273858A1

公开(公告)日：2020-08-27

申请号：US16874347

申请日：2020-05-14

Applicant: ROHM CO., LTD.

Inventor： Kentaro NASU ,  Kenji NISHIDA

IPC: H01L27/088 ,  H01L23/522 ,  H01L27/02 ,  H01L29/78 ,  H01L29/06 ,  H01L29/423 ,  H01L27/06

Abstract: A semiconductor device includes an enhancement-mode first p-channel MISFET, an enhancement-mode second p-channel MISFET, a drain conductor electrically and commonly connected to the first p-channel MISFET and the second p-channel MISFET, a first source conductor electrically connected to a source of the first p-channel MISFET, a second source conductor electrically connected to a source of the second p-channel MISFET, and a gate conductor electrically and commonly connected to a gate of the first p-channel MISFET and a gate of the second p-channel MISFET.